Global X2A′ potential energy surface of Li2H and quantum dynamics of H + Li2 (X1Σg+) → Li + LiH (X1Σ+) reaction

A global potential energy surface (PES) for the electronic ground state of Li₂H system is constructed over a large configuration space. About 30 000 ab initio energy points have been calculated by MRCI‐F12 method with aug‐cc‐pVTZ basis set. The neural network method is applied to fit the PES and the root mean square error of the current PES is only 1.296 meV. The reaction dynamics of the title reaction has been carried out by employing time‐dependent wave packet approach with second order split operator on the new PES. The reaction probability, integral cross section and thermal rate constant are obtained from the dynamics calculation. In most of the collision energy regions, the integral cross sections are in well agreement with the results reported by Gao et al. The rate constant calculated from the new PES increases in the temperature range of present investigation.     

从“求圆截线平面问题”的研究谈学生能力的培养

对“求圆截线平面问题”作了深入研究,给出了四种解法,得到了与椭球面交线是圆的平面的充分必要条件,交线圆的中心和半径,并结合该问题谈了基础课教学中对学生能力的培养．     

二元Schur凹copula的次对角部分

任意给定一个二元Schur 凹copula, 结合其自身和次对角部分, 利用取大和取小运算, 构造了一类新copula, 使得次对角部分相互重合, 讨论了新copula 的Schur 凹性与Schur 几何凹性.     

Dielectric mismatch effect on the photoionization cross section and intersublevel transitions in GaAs nanodots

A theoretical study of the electronic states in a spherical quantum dot with and without a hydrogenic impurity is performed within the effective mass approximation taking into account the dielectric mismatch effect. By considering the joint action of the quantum confinement and polarization charges, the photoionization cross section for an on-center donor and intersublevel optical absorption are investigated. We found that: i) the subband energies increase while the 1s and 2p impurity levels decrease when the dielectric mismatch between the dot and its environment enhances; ii) the dielectric mismatch has a significant effect on the peak position and magnitude of the photoionization cross section so that the behavior of this quantity can indicate the material in contact with the nanostructure; iii) the absorption spectrum is less sensitive to the environment dielectric properties but it significantly depends on the dot radius as well as on the impurity presence. The possibility of tuning the resonant energies by using the combined effect of the quantum confinement and dielectric mismatch between the dot and the surrounding medium can be useful in designing new optoelectronic devices.     

S波段宽带高平均功率速调管输出段的研制

 研制了一种用于S波段、7.1%带宽、高平均功率速调管的输出段结构。该结构采用双间隙重叠模耦合腔,利用短槽耦合方式,计算得到耦合槽的尺寸,常规选取两个谐振腔的频率、品质因子及两腔间隙中心之距等参数。根据这些参数加工冷测模型,冷测获得的槽的谐振频率和耦合系数与设计值误差只有2.5%。计算的阻抗矩阵曲线与冷测的相对阻抗曲线趋势基本一致,计算的功率与实际的热测结果均满足峰值输出功率大于1.1 MW、平均输出功率大于22 kW的设计要求。实验结果证明该输出段可达到7.1%的带宽,从而验证了该设计方法的正确性。     

Laser-induced quadrupoleben quadrupole collisional energy transfer in Xe-Kr

By considering the relative velocity distribution function and multipole expansion interaction Hamiltonian, a three-state model for calculating the cross section of laser-induced quadrupole-quadrupole collisional energy transfer is presented. Calculated results in Xe-Kr system show that in the present system, the laser-induced collision process occurs for ~4 ps, which is much shorter than the dipole-dipole laser-induced collisional energy transfer (LICET) process. The spectrum of laser-induced quadrupole-quadrupole collisional energy transfer in Xe-Kr system has wider tunable range in an order of magnitude than the dipole-dipole LICET spectra. The peak cross section decreases and moves to the quasi-static wing with increasing temperature and the full width at half peak of the profile becomes larger as the system temperature increases.     

Cs(6D5/2)+H2→CsH[ X1Σ+(v,J)]+H转动分辨总截面的测量

利用泵浦-检测方法,在样品池条件下,研究了Cs(6D5/2)与H2反应碰撞传能过程。利用激光感应荧光（LIF）光谱技术,确定了CsH[X1Σ+(v,J)]振转能级上的布居分布,转动态分布与热统计分布基本一致.Cs激发态原子密度由激光能量吸收得到.记录A1Σ+(v',J+1)→X1Σ+(v,J)的时间分辨荧光,从荧光强度的对数值给出的直线斜率确定(v',J+1)→(v,J)的自然辐射率,结合(v,J)→(v',J+1)吸收系数的测量,得到反应生成物CsH[X1Σ+(v,J)]态的分子密度.由速率方程分析,给出反应截面(v,J),对J求和,得到(v)[10-16cm2单位]分别为（0.64±0.19）（v=0）和（0.58±0.17）（v=1）.     

不同能量下He原子与HCl分子碰撞激发分波截面的同位素效应研究

基于Huxley势函数的拟合势,通过精确度较高的密耦近似方法计算了入射能量为50meV和150meV时,氦原子的四种同位素3He,4He,9He,10He与HCl分子碰撞体系的激发分波截面.通过分析不同能量下,各碰撞体系分波截面的差异,探讨了不同入射能量时He的同位素对He-HCl碰撞体系的分波截面的影响,总结出其分波截面随量子数和体系约化质量的变化规律.     

中能重离子碰撞中同位旋相关核子-核子碰撞截面和同位旋相关平均场的探针

在最近几年我们通过使用同位旋相关的量子分子动力学模型 (IQMD)系统的研究了同位旋相关的平均场和介质中核子 核子 (N N)碰撞截面对中能重离子碰撞 (HIC)中碎裂和耗散的同位旋效应。我们发现原子核阻止R和Qzz,中等质量碎片多重性Nimf和质子(中子 )发射数Np(Nn)敏感的依赖于介质中N N碰撞截面的同位旋效应 ,而弱的依赖于同位旋相关的平均场 (对称势 ) ,这些物理量作为提取相对高能范围缺中子系统的同位旋相关介质中N N碰撞截面的探针。我们也可以通过相对低能区到 1 5 0MeV/u的前平衡核子发射中质比来提取关于对称势的知识和讨论它的同位旋依赖性。