无溶剂顶空气相色谱法测定盐酸左氧氟沙星残留溶剂

采用无溶剂-顶空-气相色谱直接测定盐酸左氧氟沙星中残留溶剂乙醇、甲苯、二甲基亚砜(DMSO)等.各残留溶剂的检出限分别在0.007-0.032 μg,6次测定的相对标准偏差RSD在1.84%-1.92%,加标回收在90.9%-110%.方法简便、快速、灵敏,可应用于其他药品中残留溶剂的分析.     

T形网络与П形网络的等效变换法

电阻的T形网络与П形网络间的等效变换是电路计算中经常遇到的问题．一般教材都根据等效的概念采用基尔霍夫定律得到转换公式，过程复杂，不利于学生的理解和掌握．这里介绍一种更为简便易懂的推导方法．     

自然循环回路内芯片的强化沸腾换热研究

针对电子器件的高效冷却问题,对自然循环回路系统内表面加工有方柱形微结构的硅片上FC-72的强化沸腾换热性能进行了实验研究.测试了两个芯片,其表面上的方柱形微结构的边长均为30μm,但高度分别为60 μm和200 μm.沸腾介质的过冷度设为10 K、25 K和35 K.随着壁面过热度的增加,微结构表面芯片上的热流密度急剧增加且临界热流密度时芯片的表面温度低于芯片回路正常工作的临界上限温度85℃,这与其在池沸腾换热中的特点一样.但临界热流密度值与池沸腾情况相比有所降低.     

Scheme for entanglement concentration of unknown W class states via linear optics

This paper proposes a scheme for entanglement concentration of unknown triparticle W class states with a certain probability. This protocol is mainly based on the coincidences of single-photon detectors and requires single-photon detectors and linear optical elements. The scheme is feasible within current technology.     

A threshold voltage model MOSFETs considering for high-k gate-dielectric fringing-field effect

In this paper, a threshold voltage model for high-k gate-dielectric metal-oxide-semiconductor field-effect transistors （MOSFETs） is developed, with more accurate boundary conditions of the gate dielectric derived through a conformal mapping transformation method to consider the fringing-field effects including the influences of high-k gate-dielectric and sidewall spacer. Comparing with similar models, the proposed model can be applied to general situations where the gate dielectric and sidewall spacer can have different dielectric constants. The influences of sidewall spacer and high-k gate dielectric on fringing field distribution of the gate dielectric and thus threshold voltage behaviours of a MOSFET are discussed in detail.     

关于Fatou域的结构

给定有理函数$f$的一个不变的多连通吸性域$U$,我们证明存在一个有理函数$g$和它的一个完全不变的Fatou域$V$,使得$(f,U)$和$(g,V)$是全纯共轭的,而且$g$的Julia集的每个非平凡分支都是拟圆周,其内部是一个最多包含一个后临界轨道点的最终超吸性域. 进一步,$g$在相差一个全纯共轭的意义下是唯一的.     

关于非主Hopf曲面的模空间

构造了Ｓ＾１上Ｓ＾３｜Ｈ－丛的所有复结构的模空间，其中丛的转换函数ｕ：ｓ＾３／Ｈ→Ｓ＾３／Ｈ是Ｓ＾３／Ｈ的一个对合，ＨＵ（２），Ｈ为有限群且在Ｓ＾３／Ｈ上的作用是自由的。真不连续的。     

拟共形映射和John域

本文研究了(R)∫ΩBn中的John域与一致域和线性局部连通域的关系.利用平面中John域和拟圆的关系,获得了(R)∫ΩBn中的John域成为一致域和线性局部连通域的几个充分条件,它们是(R)2的推广.     

On S-Shaped Bifurcation Curves for a Class of Perturbed Semilinear Equations

By making use of bifurcation analysis and continuation method, the authors discuss the exact number of positive solutions for a class of perturbed equations. The nonlinearities concerned are the so-called convex-concave functions and their behaviors may be asymptotic sublinear or asymptotic linear. Moreover, precise global bifurcation diagrams are obtained.