Effect of Hydrogen Implantation on SIMOX SOI Materials

Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.     

Yb:FAP和Yb:C3S2-FAP晶体光谱的温度特性和选择激发

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第一届掺杂纳米材料发光性质学术会议

该会议为中国物理学会发光分会、中国稀土学会发光专业委员主办的国内首次纳米材料发光性质专题学术研讨会，旨在通过大会报告、专题研讨等活动，总结、交流近年来掺杂纳米发光材料及其相关应用领域所取得的研究进展和成果。在此基础上凝练科学目标、探讨和规划未来的学科发展方向并集中国内的优势资源攻克难点的科学问题，使我国在该研究领域更具国际竞争力。会议诚邀请该领域知名的专家和学者参加；在探索纳米世界之余，也将带您领略海南美丽而独特的自然景观和人文奇迹。     

Practical absorption limits of MPP absorber

The construction and properties of microperforated panel (MPP) absorber are discussed. The absorption limit of the absorber had been shown that low values of the perforate constant k = d(f/10)1/2 and the orifice diameter d (in mm) are essential for MPP to have high absorption in wide frequency band. To find the exact limits, take 1 for k as a start, because both specific resistance and high absorption require k around one. And the orifice diameter d is chosen as 0.1 mm, so that the peak absorption coefficient (resonance absorption) is at 1000 Hz, and high sound frequency may be in the absorption region. Is it possible for a single layer of such an MPP to cover the whole absorption region required in practice? The half-absorption limit is not a good criterion, because low absorption comes in also in some cases. The 0.5 absorption coefficient limit is suggested for practical region, as a standard for comparison. Absorption curves were drawn for different load resistances, of absorption coefficients versus frequency. Ordinary MPP absorber absorbs in slightly over two octaves, and the new absorber with r = 1 (specific resistance equal to the characteristic impedance in air)is slightly better than these, 2.5 octaves. The new absorbers with r > 1, are much better than these, and some satisfies high absorption in broad frequency range. Realization of these will mean great progress of MPP absorbers.     

高固体分羟基丙烯酸树脂的合成

以过氧化二苯甲酰（BPO）／过氧化二异丙苯（DCP）（质量比为2：3）为复合引发剂，二甲苯为溶剂，选用适量含羟基单体和分子量调节剂，以减缓树脂合成聚合反应中的自动加速现象，合成了分子量为3000-4000，多分散性指数d〈2的高固体分羟基丙烯酸树脂．该树脂与缩二脲多异氰酸酯（HDI）的配漆实验证明，所得漆膜鲜映性好、丰满度高、色泽好、雾影值低、综合性能较好．     

精密垫片精冲工艺有限元分析与模具设计

精密垫片零件，如图1所示，零件材料为1Cr18Ni9Ti，强度大（σb=650MPa），有一定塑性。从零件尺寸精度看，φ4mm外圆为IT7级精度，φ4mm外圆与φ2mm内孔有很高的同轴度要求，冲裁断面与零件两端面有垂直度要求，普通冲压不能达到零件精度：从工序的角度看，有冲孔和落料工序，剪切面粗糙度Ra≤3．2μm，属于光洁冲裁范畴；另外，技术条件中要求零件两大面不得有任何划伤，且光滑平整。总体上看，该零件的冲压加工性不好，难度较大，对模具的设计、选材、制造要求都较高。     

CHBr薄膜制备的初步研究

碳氢（cH）及其掺杂材料常被用作ICF实验靶丸烧蚀层材料。制备CH薄膜及其掺杂材料的方法有很多，诸如：离子束辅助沉积、离子溅射沉积、低压等离子体化学气相沉积（LPPCVD）等。近年来，详细研究了LPPCVD法制备CH薄膜的制备方法与工艺，形成了比较成熟的技术路线与工艺路线，并为“神光”实验提供了一系列实验靶丸。     

氧碘化学激光气固相化学反应体系热力学分析

氧碘化学激光器（COIL）的发展已经到了提高系统安全性和工作环境适应性、降低系统复杂性阶段，而改进O2（^1△g）的产生方式和方法正是这个阶段的重要工作内容之一。近期，美国空军研究实验室运用气-固相反应方式产生O2（^1△g）。采用碱金属过氧化物或碱土金属过氧化物与卤化氢反应，生成O2（^1△g）。通常气一固相反应有着反应速度慢，接触面积小，反应产物难以脱出固体表面的缺陷，使得产出率低，而不被广泛采用。但随着表面化学研究的突飞猛进，借助表面活化分子，特殊性质的表面构造，大表面的构造，都为气一固相反应的进行提供了可行途径。如果此方法能用在氧碘激光器上，将克服传统方法的诸多不足。