复杂背景下扩展目标极形态分形分割算法

 用极形态算子优化分形模型，提出了一种复杂背景下的扩展目标分割新算法。首先分析极坐标系中可变尺度形态结构算子的旋转缩放特性，并以此为基础进行极形态运算，再利用最小二乘法提取分形尺度误差进行二值化，然后进行边界跟踪，依据先验知识抑制背景团块，最后保留并填充面积最大的目标团块。仿真实验证明能够有效分割复杂背景下的扩展目标，并较好地保留了目标形状特征。     

垂直入射时无限长分层柱电磁散射的改进算法及应用

结合非均匀球粒子对平面波散射的散射场计算的改进算法,提出了平面波垂直入射无限长分层圆柱散射场快速稳定而有效的改进电磁散射算法。与已有算法相比,改进算法所能计算的无限长非均匀介质圆柱的尺寸参量突破10000,计算层数达到106,并且计算时间很短,最多仅为几秒。该算法可以用于不同的波段以及不同领域的任意无耗或吸收无限长圆柱体散射场的计算。最后将该算法应用于梯度折射率聚合物光纤(GI-POF)散射特性的研究,为非接触、在线测量聚合物光纤折射率分布提供了理论依据。     

内窥式共聚焦成像系统分析

基于点扩展函数和傅立叶光学理论，推导出系统的相干传递函数，并详细研究了光纤对轴向分辨率的影响.研究结果表明：该系统为相干成像系统，系统的轴向分辨率随光纤半径A的增加而降低.最后，搭建了一套内窥式共聚焦成像系统，并测得光栅样品的共聚焦图像.实验结果表明，该系统具有良好的分辨率.     

氟诺喹酮类药物分子抗肺炎克雷伯氏菌的结构活性关系研究

利用主成分分析和分层聚类分析方法研究了具有抗肺炎克雷伯氏菌的氟诺喹酮类药物分子的结构活性关系．主成分分析方法表明变量ELUMO、ΔEHL、μ、Q3、Q5、QA、lgP、MP、MR能够有效地对抗肺炎克雷伯氏菌的氟诺喹酮类药物进行分类．分层聚类方法和主成分分析方法的结果一致．这表明两种方法都能够对新的具有抗肺炎克雷伯氏菌的氟诺喹酮类药物的分类提供一个可信的规律．利用主成分分析法和分层聚类分析法对其他4个氟诺喹酮类药物分子进行分析，结果都表明有三个药物分子具有较强的抗肺炎克雷伯氏菌活性，此结果和临床结果相吻合．     

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition

We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.     

Electrical Characterization of Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited HfO2 Dielectrics for Radio Frequency Integrated Circuit Application

Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5fF/μm2 at 100kHz, a small leakage current density of 6.4 × 10^-9 A/cm^2 at 1.8V and 125℃, a breakdown electric field of 2.6 MV//cm as well as voltage coefficients of capacitance （VCCs） of 2110ppm/V^2 and -824 ppm/V at 100kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole-Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present, suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application.     

新课程改革对物理教师的新要求

新一轮课程改革的总体目标是要构建符合素质教育的课程新体系,既要为高一级学校输送合格人材,又要为社会输送合格劳动者,是面向全体学生的教学理念．新课程提出的新理念对教师的教育观念和教学实践提出了挑战．要求物理教师既要领会新课程的精神、把握新课程的标准、吃透新教材的内容．还要深化自身的知识结构、扩展自身的能力结构．     

波前编码系统成像特性的空间域分析

波前编码技术在大幅度地增加光学系统景深的同时,可以抑制各种离焦类型的像差。目前波前编码系统的成像特性分析大多是基于空间频率域的分析,在应用稳定相法导出三次型相位板波前编码系统的点扩展函数近似解析式的基础之上,描述了点扩展函数的边界、带宽与振荡等特性,分析了波前编码系统对离焦、像散、彗差等常见像差的敏感性,从空间域进一步分析了波前编码系统的成像特性。