Zn∶Er∶LiNbO_3单晶的坩埚下降法生长及光谱特性

报道了Zn∶Er∶LiNbO3单晶的坩埚下降法生长工艺。通过控制晶体生长固液界面的温度梯度(30~35℃.cm-1)、晶体的生长速度(0.8~1.5 mm.h-1)、密闭Pt坩埚等条件生长了宏观无缺陷的Zn2+(3%)和Er3+(0.6%)共掺的LiNbO3单晶。用X射线衍射(XRD)和差热分析(DTA)表征了获得的晶体,并测量了晶体不同部位的吸收光谱和荧光谱。从吸收光谱以及由XRD数据计算所得的晶胞参数推断,沿生长方向Er3+在晶体中的浓度分布逐步减少。光谱数据表明,晶体底部样品的吸收强度和荧光强度要比顶部大,而对应于Er3+上能级4S3/2和2H11/2跃迁至基态4I15/2的绿光发射,晶体底部却比顶部表现出更高的上转换效率。从晶体的内部结构、缺陷情况以及Er3+的分凝现象解释了产生上述现象的内在机制。     

Eu3+/Tb3+和Eu3+/Pr3+共掺杂P(MMA-co-St)的荧光性能的研究

将不同荧光性能的铽(Tb)、镨(Pr)离子分别与铕(Eu)离子混合，以三异丙氧基稀土的形式掺杂P(MMA-CO-St)共聚物，研究Eu^3 ／Tb^3 和Eu^3 ／pr^3 共掺杂P(MMA-CO-St)的荧光性能的变化情况．结果表明，Eu^3 ／Tb^3 掺杂的P(MMA-CO-St)中，Tb^3 作为能量给予体，Eu^3 作为能量接受体，能量转移的结果使Eu^3 特征荧光显增强；Eu^3 ／pr^3 掺杂的P(MMA-CO-St)中，Eu^3 的能量向pr^3 转移，致使Eu^3 的特征荧光猝灭，pr^3 的荧光略为增强．     

Effects of Poly(ethylene glycol) Doping on the Behavior of Pyrene, Rhodamine 6G, and Acrylodan-Labeled Bovine Serum Albumin Sequestered within Tetramethylorthosilane-Derived Sol-Gel-Processed Composites

We investigate the effects of controlled poly(ethylene glycol) (PEG) doping on the behavior of pyrene, rhodamine 6G (R6G), and acrylodan-labeled bovine serum albumin (BSA-Ac) sequestered within tetramethylorthosilicate (TMOS)-derived sol-gel-processed materials. To probe the dipolarity of the local environment within the composite we performed static fluorescence measurements on pyrene as the composites aged. We found that small levels of PEG loading effected significant enhancements in the local dipolarity surrounding the average pyrene molecule. Time-resolved fluorescence anisotropy measurements were used to follow the rotational reorientation dynamics of R6G as the composites aged. As the PEG loading increased, the R6G reorientational mobility increased. Nitrogen adsorption techniques were used to quantify the effects of PEG doping level on the surface area and final xerogel pore features. A large reduction in surface area was observed with PEG doping, but no detectable change in pore size was noted. The effects of PEG doping on a biomolecule were probed by following the time-resolved fluorescence anisotropy decay of BSA-Ac. These results showed that PEG doping resulted in increased biomolecule dynamics relative to that found for a neat, undoped TMOS-derived composites. Together these results show that PEG doping can be used to tune the sol-gel-processed composite dipolarity, alter the mobility of dopants sequestered within the composite, control analyte acessibility to the sensing chemistry, and modulate the internal dynamics within a biodopant.     

Phosphorus and Halogen Co‐Doped Graphene Materials and their Electrochemistry

Doping of graphene materials with heteroatoms is important as it can change their electronic and electrochemical properties. Here, graphene is co‐doped with n‐type dopants such as phosphorus and halogen (Cl, Br, I). Phosphorus and halogen are introduced through the treatment of graphene oxide with PX₃ gas (PCl₃, PBr₃, and PI₃). Graphene oxides are prepared through chlorate and permanganate routes. Detailed chemical and structural characterization demonstrates that the graphene sheets are covered homogeneously by phosphorus and halogen atoms. It is found that the amount of phosphorus and halogen introduced depends on the graphene oxide preparation method. The electrocatalytic effect of the resulting co‐doped materials is demonstrated for industrially relevant electrochemical reactions such as the hydrogen evolution and oxygen reduction reactions.     

铟镓共掺杂对n-ZnO纳米棒/p-GaN异质结生长行为和光电性能的影响

利用低温水热法在p-GaN薄膜上生长了铟(In)和镓(Ga)共掺杂的ZnO纳米棒。X射线衍射(XRD)、X射线光电子能谱(XPS)和X射线能量色谱仪(EDS)结果表明,In和Ga已固溶到ZnO晶格中。扫描电子显微镜(SEM)结果表明, ZnO纳米棒具有良好的c轴取向性,随着In和Ga共掺杂浓度的增加,纳米棒的直径减小,密度增加。XRD结果表明,In和Ga共掺杂引起ZnO晶格常数增大,导致(002)衍射峰向低角度方向偏移。同时,ZnO的光学性质受到In和Ga共掺杂的影响。与纯ZnO相比, 共掺杂ZnO纳米棒的紫外发射峰都出现轻微红移,这是表面共振和带隙重整效应综合作用的结果。I-V特性曲线表明,随着In和Ga共掺杂浓度的增加,n-ZnO纳米棒/p-GaN异质结具有更好的导电性。     

Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements

The p-type doping efficiency of 4H silicon carbide (4H-SiC) is rather low due to the large ionization energies of p-type dopants. Such an issue impedes the exploration of the full advantage of 4H-SiC for semiconductor devices. In this study, we show that co-doping group-IVB elements effectively decreases the ionization energy of the most widely used p-type dopant, i.e., aluminum (Al), through the defect-level repulsion between the energy levels of group-IVB elements and that of Al in 4H-SiC. Among group-IVB elements Ti has the most prominent effectiveness. Ti decreases the ionization energy of Al by nearly 50%, leading to a value as low as ~0.13 eV. As a result, the ionization rate of Al with Ti co-doping is up to ~5 times larger than that without co-doping at room temperature when the doping concentration is up to 10¹⁸ cm^-3. This work may encourage the experimental co-doping of group-IVB elements such as Ti and Al to significantly improve the p-type doping efficiency of 4H-SiC.     

Preparation and Photocatalytic Activity of Ce,H3PW12O40 co-doped TiO2 Hollow Fibers

A series of Ce, H3PW12O40 co-doped TiO2 hollow fibers photocatalysts have been prepared by sol-gel method using ammonium ceric nitrate, H3PW12O40 and tetrabutyltitanate as precursors and cotton fibers as template, followed by calcination at 500 ℃ in N2 atmosphere for 2 h. Scanning electron microscopy, X-ray diffraction, nitrogen adsorption-desorption mea- surements, and UV-Vis spectroscopy are employed to characterize the morphology, crystal structure, surface structure, and optical absorption properties of the samples. The photo- catalytic performance of the samples has been studied by photodegradation phenol in water under UV and visible light irradiation. The results show that the TiO2 fiber materials have hollow structures, and the co-doped TiO2 hollow fibers exhibit higher photocatalytic activities for the degradation of phenol than un-doped, single-doped TiO2 hollow fibers under UV and visible light. In addition, the recyclability of co-doped TiO2 fibers is also confirmed that the TiO2 fiber retains ca. 90% of its activity after being used four times. It is shown that the co-doped TiO2 fibers can be activated by visible light and may be potentially applied to the treatment of water contaminated by organic pollutants. The synergistic effect of Ce and H3PW12O40 co-doping plays an important role in improving the photocatalytic activity.     

First-principle study on the effect of high Li-2N co-doping on the conductivity of ZnO

Based on the density functional theory (DFT), using first-principles plane-wave ultrasoft pseudopotential method, the models of the unit cell of pure ZnO and two highly Li-2N co-doped supercells of Zn_0.9375Li_0.0625O_0.875N_0.125 and Zn_0.9167Li_0.0833O_0.8333N_0.1667 were constructed, and the geometry optimization for the three models was carried out. The total density of states (TDOS) and the band structures (BS) were also calculated. The calculation results showed that in the range of high doping concentration, when the co-doping concentration is more than a certain value, the conductivity decreased with the increase of co-doping concentration of Li-2N in ZnO, which agrees with the change trend of the experimental results.     

硼/氮原子共掺入金刚石的晶格损伤及其退火过程的计算机模拟

借助于Tersoff势函数和分子动力学模拟技术研究了室温下500eV的能量粒子硼(4个)和氮(8个)共掺入金刚石晶体中所引起的损伤区域内晶体微细观结构的变化特征以及后续加热退火晶体结构的演变特征.结果表明：随着掺入原子数目的增加，受影响的区域范围渐渐增大，12个粒子全部注入金刚石晶体后局部影响区域的半径达0.68nm，损伤区域中心的三配位原子数增加而四配位数原子数量减少.加热退火过程中损伤中心区域的原子发生扩散，部分原子的扩散距离达到4个晶格间距.加热退火使损伤区域中心原子间的平均键长趋于金刚石结构的键长.退火后薄膜中注入的杂质原子向表面扩散引起应力分布产生变化，杂质原子经过一系列的扩散过程能够到达空位的位置，减少薄膜中空位数量，减小晶格畸变程度，原子向表面扩散引起应力产生重新分布，薄膜中应力峰值的峰位向薄膜表面发生移动，局部应力集中程度降低.通过不同退火温度的比较发现低温下退火(800℃)更有利于空位的运动和晶格损伤的恢复从而提高晶格质量. 关键词： 金刚石共掺杂 分子动力学 退火