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81.
Silver‐Gold alloy/diamond like carbon (Ag‐Au/DLC) nanocomposite films were prepared by co‐deposition of RF‐sputtering and RF‐PECVD on glass substrates by using acetylene gas and silver‐gold target. The deposition process was carried out at room temperature in one minute with the variable parameters of initial pressures and RF powers. X‐ray diffraction analysis demonstrated the formation of Ag/Au alloy nanoparticles with a face‐centered cubic (FCC) structure. Localized surface plasmon and optical properties of Ag‐Au alloy nanoparticles were studied by UV‐visible spectrophotometry which showed that increasing RF power and initial pressure cause a redshift in all samples. Moreover, the effect of RF power and initial pressure on the size and shape of nanoparticles were studied by 2D Atomic force microscopy images. Energy dispersive X‐ray spectroscopy revealed the formation of Ag‐Au/DLC nanoparticles and the percentages of C, Ag, Au and O in all samples. The applied method for Ag/Au alloy preparation is the one step and low‐cost method which makes the samples ready for sensing application. 相似文献
82.
利用射频等离子体化学气象沉积法(r.f.PECVD),在12μm厚的聚对苯二甲酸乙二醇酯 (PET)上制备了碳氢膜. 用原子力显微镜(AFM),x射线光电子能谱(XPS),激光拉曼光谱,傅里叶红外光谱等仪器,对碳氢膜的表面形貌和内部结构特性进行了较详细研究. 镀碳氢膜PET的阻隔性能在标准透水蒸气测试仪上进行检测. 实验结果证明:沉积工艺参数对碳氢膜的生长速率及结构性能有重要影响;在PET上沉积的是纳米碳氢膜,该膜主要由sp2和sp3杂化的碳氢化合物组成;当PET上碳氢膜厚度为900nm时,阻水蒸气性能可提高7倍.
关键词:
碳氢膜
射频等离子体化学气象沉积法
聚对苯二甲酸乙二醇酯
阻隔性能 相似文献
83.
采用射频等离子体增强化学气相沉积(RF-PECVD)法在石英片上生长类金刚石薄膜。通过紫外可见分光光度计、椭偏仪测试手段,研究不同射频功率条件下类金刚石薄膜的光学性能的变化。结果表明,射频功率对类金刚石薄膜的生长具有重要影响,在较低功率下生长的类金刚石薄膜,具有较高的光学透过率和较大的光学带隙。 相似文献
84.
85.
P. Sennikov D. Pryakhin N. Abrosimov B. Andreev Yu. Drozdov M. Drozdov A. Kuznetsov A. Murel H.‐J. Pohl H. Riemann V. Shashkin 《Crystal Research and Technology》2010,45(9):899-908
The process of plasma chemical deposition of silicon from inductively coupled plasma of the mixture of high‐purity SiF4 and H2 sustained by RF discharge at 13.56 MHz in amount sufficient for subsequent growth of crystal by Czochralski method was investigated. The structure and impurity content of the produced layers as well as of the grown crystal have been studied (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
86.
Raman spectra of microcrystalline silicon layers have been recorded in‐situ during growth. The spectra have been collected under realistic conditions for solar cell deposition. To enable these measurements an electrode with an optical feed through has been developed. By using a metallic grid to shield the feed through it is possible to achieve homogeneous deposition of µc‐Si:H at a sufficient optical transmission. In‐situ Raman measurements were carried out during the deposition of a layer with an intentionally introduced gradient in crystallinity that was seen in‐situ as well in reference measurements performed on the same layer ex‐situ. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
87.
用等离子体增强化学气相沉积法在低温 (低于 5 0℃ )衬底上沉积Si SiOx 和Si SiNx 复合薄膜 ,可得到平均颗粒尺寸小至 3nm的高密度 (最高可达 4 0× 10 1 2 cm- 2 )纳米硅复合薄膜 .5 0 0℃快速退火后 ,这种复合薄膜显现出优异的可见光全波段光致发光特性 .通过比较相同条件下所制备的纳米Si SiOx 和Si SiNx 复合薄膜的光致发光效率 ,发现纳米Si SiNx 具有更为优异的光致发光效率 ,这一点在可见光短波区表现得尤为显著 相似文献
88.
Selective growth of individual multiwalled carbon nanotubes 总被引:1,自引:0,他引:1
R. E. Morjan M. S. Kabir S. W. Lee O. A. Nerushev P. Lundgren S. Bengtsson Y. W. Park E. E. B. Campbell 《Current Applied Physics》2004,4(6):591-594
Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time. 相似文献
89.
《中国物理 B》2021,30(9):98101-098101
A hydrogen-plasma-etching-based plasma-enhanced chemical vapor deposition(PECVD) synthesis route without metal catalyst for preparing the graphene films on flexible glass is developed. The quality of the prepared graphene films is evaluated by scanning electron microscopy, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, ultraviolet-visible spectroscopy, and electrochemical measurements. In a radio frequency(RF) power range of50 W–300 W, the graphene growth rate increases with RF power increasing, while the intensity ratio of D-to G-Raman peak(ID/IG) decreases. When the RF power is higher than 300 W, the ID/IGrises again. By optimizing experimental parameters of hydrogen plasma etching and RF power, the properties of as-prepared flexible graphene on glass are modulated to be able to achieve the graphene's transparency, good electrical conductivity, and better macroscopic uniformity.Direct growth of graphene film without any metal catalyst on flexible glass can be a promising candidate for applications in flexible transparent optoelectronics. 相似文献
90.
Chengbing Wang Xiaoming Ling Jing Shi Rongbin Xia 《Surface and interface analysis : SIA》2014,46(8):550-555
A–C:H (hydrogenated amorphous carbon) films were deposited by pulsed direct‐current (d.c.) plasma enhanced chemical vapor deposition on silicon substrates. This study investigated the structural and mechanical evolution of the as‐deposited films with fullerene‐like nanostructure. The results showed that pulsed d.c. negative bias (?500 ~ ?1000 V) signally influenced the growth rate, hardness, surface roughness, sp3 content, and friction behavior of the films. As the pulsed d.c. negative bias voltage increased, the sp3 content, surface roughness, hydrogen content and the friction coefficient of the films decreased; however, the growth rate and the hardness increased. The films deposited at ?1000 V with fullerene‐like microstructure display a nanohardness of about 19.7 GPa and the smallest friction coefficient (~0.06). The evolution on mechanical and structural properties of the films are explained by the a–C:H growth mechanism based on the interaction on plasma‐surface interface and the subsurface reactions in the film. Copyright © 2014 John Wiley & Sons, Ltd. 相似文献