Wide-range regulation of polyaniline conduction by interphase doping of a polyaniline film

The not-sufficient-enough conductance of semioxidized protonated polyaniline (PANI) is usually attributed to the presence of ordered quasi-metallic domains surrounded by a poorly conducting amorphous phase. The paper presents experimental results testifying to the existence, in semioxidized PANI, of multilevel redox heterogeneity that crucially effects the conductance magnitude in view of specific topology at which higher-oxidized (conducting) domains are surrounded by less oxidized (poorly conducting) domains and because the PANI conduction is extremely sensitive to the oxidation degree. It is shown experimentally that the interphase doping with metals and degenerate semiconductors of a semioxidized salt of PANI and poly(2-acrylamide-2-methyl-1-propanesulfonic acid) (PAMPSA) with a 1: 2 ratio between PANI and PAMPSA raises the PANI-PAMPSA conductivity by 3–8 orders of magnitude due to the formation near the interface of thin layers whose conductance depends on the work function of the material in contact with PANI-PAMPSA and in extreme cases substantially exceeds the conductance of gold and copper at room temperature.     

ICP-AES同时测定混合矿物素中的磷、钙、铁、铜、锌、锰、镁、钴

采用ICP－AES法测定混合矿物素中的磷、钙、铁、铜、锌、锰、镁、钴元素含量，并对样品的溶解酸和酸用量、元素分析线的选择以及共存元素间的干扰进行了研究。该法简便、快速，精密度和准确度较好。     

Study of the pulsed laser vapor doping of Si(1 0 0) with KrF excimer laser and BCl3 gas

The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl₃ gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl₃ were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface.     

Cr^4＋：YAG,Cr^4＋：Mg2SiO4近红外荧光辐射温度特性研究

测量了Ｃｒ＾４＋，ＹＡＧ、Ｃｒ＾４＋，Ｍｇ２ＳｉＯ４晶体在室温和液氮温度下的荧光光谱，吸收光谱和激发态寿命，讨论了温度变化时，两种晶体中Ｃｒ＾４＋近红外辐射积分强度变化与激光发态寿命变化的关系，得出结论：在７７Ｋ￣３００Ｋ范围内，Ｃｒ＾４＋的＾３Ｔ２能级荧光辐射截面本身受温度影响不大，Ｃｒ＾４＋辐射荧光的变化，主要是由无辐射弛豫速率随温度变化而引起的。     

Interdiffusion of hydroxyl groups and of doping additions between a bearing pipe and a deposited layer in billets of fiber light guides

Using Raman spectroscopy, a quantitative analysis of the distribution of OH⁻ ions on the boundary between a bearing pipe and a glass layer deposited from chlorides in billets for quartz fiber light guides is carried out. Water penetrated into the light-reflecting shell to a depth of several tenths of a millimeter, depending on the composition of the doping layer (i.e., ultimately on the temperature of the depsoition process). A. F. Ioffe Physical-Technical Institute, Academy of Sciences of Russia, 26, Politekhnicheskaya St., St. Petersburg, 194021, Russia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 4, pp. 548–550, July–August, 1997.     

有机薄膜器件负电阻特性的影响因素

研究了影响有机染料掺杂聚合物薄膜器件负电阻特性的因素，为探索有机负电阻的机理提供实验依据。实验中制备了多种有机染料掺杂聚合物薄膜器件，研究了有机小分子染料、聚合物基体、薄膜组成及厚度、ITO和聚苯胺阳极等对有机染料掺杂聚合物薄膜器件负电阻特性的影响。在室温、大气环境下，所制备的多种有机染料掺杂聚合物器件在所加电压为3～4V时，观察到明显的负电阻特性，电流峰谷比最大约为8。负电阻现象及峰谷比的大小受膜厚和器件的结构、制备工艺等影响。提出用负电阻和二极管并联组成的等效电路模型解释影响负电阻特性的因素，认为负电阻特性与载流子的不平衡注入有关。在此基础上设计、合成了主链含唔二唑电子传输基团的可溶性聚对苯撑乙烯衍生物，该聚合物兼具空穴和电子传输功能，在空气中具有较稳定的N型负电阻特性。进一步控制相关材料和工艺条件，有可能得到易于控制的负阻效应，开发出新型的有机负电阻器件。     

Theoretical STM images of alkaline-earth metal adsorbed Si(1 1 1)3 × 2 surfaces

We have performed total-energy calculations to study theoretical scanning tunneling microscopy (STM) images of the Si(1 1 1)3 × 2 surfaces induced by the adsorption of alkaline-earth metals (AEMs). Previously, in a series of works on Ba/Si(1 1 1) system, we have found that the observed Si(1 1 1)3 × 1-Ba LEED phase indeed has a 3 × 2 periodicity with a Ba coverage of 1/6 ML and the HCC substrate structure. Based on results of the Ba case, we proposed that the HCC structure is also adopted for other AEM atoms, which was confirmed by our recent work. In this paper, we mainly report the STM simulations for different AEM systems to compare with existing experimental data. We discuss the difference in the detailed STM images for different AEM adsorbates. Especially, the difference in filled-state images between Mg and other AEM atoms is attributed to the strong Mg-Si interaction.     

Amorphous Fe–Mg alloy thin films: magnetic properties and atomic vibrational dynamics

Amorphous (a-) Fe _x Mg_1?x alloys are interesting materials for the investigation of non-Debye-like low-energy vibrational excitations. We have prepared a-Fe _x Mg_1?x alloy thin films (0.3 ≤ × ≤0.7) by vapour quenching. The amorphous state was confirmed by conversion electron Mössbauer spectroscopy between 4.2–300 K, and the x- and temperature-dependence of the isomer shift and hyperfine magnetic field was measured. For x= 0.6 and 0.7, magnetic ordering occurs below ~150 K. The atomic vibrational density of states, g(E), was determined by nuclear resonant inelastic scattering, providing clear evidence for the non-Debye-like low-energy vibrational excitations.     

Quantitative assessment of solid oxide electrochemical doping

Quantitative analysis of metal cation doping by solid oxide electrochemical doping (SOED) has been performed under galvanostatic doping conditions. A M–β″-Al₂O₃ (M=Ag, Na) microelectrode (contact radius: about 10 μm) was used as cation source to attain a homogeneous solid–solid contact between the β″-Al₂O₃ and doping target. In Ag doping into alkali borate glass, the measured dopant amount closely matched the theoretical value. High Faraday efficiencies of above 90% were obtained. This suggests that the dopant amount can be precisely controlled on a micromole scale by the electric charge during electrolysis. On the other hand, current efficiencies of Na doping into Bi₂Sr₂CaCu₂O_y (BSCCO) ceramics depended on the applied constant current. Efficiencies of above 80% were achieved at a constant current of 10 μA (1.6 A cm⁻²). The relatively low efficiencies were explained by the saturation of BSCCO grain boundaries with Na. By contrast, excess Na was detected on the anodic surface of ceramics at a constant current of 100 μA (16 A cm⁻²). In the present study, we demonstrate that SOED enables micromole-scale control over dopant amount.     

镁掺杂对In2O3电导和气敏性能的影响

用共沉淀法制备了Mg2 + 掺杂的In2 O3 纳米粉 ,研究了镁掺杂对In2 O3 电导和气敏性能的影响 .结果表明 :MgO和In2 O3 间可形成有限固溶体In2 -xMgxO3 (0≤x≤ 0 .40 ) ;MgIn× 电离的空穴对材料导带电子的湮灭 ,使掺镁纳米粉的电导变得很小 ;n(Mg2 + )∶n(In3 + ) =1∶2共沉淀物于 90 0℃下热处理 4h ,用所得的纳米粉制作的传感器在 32 0～ 370℃下 ,对 45 μmol/LC2 H5OH的灵敏度达 10 2 .5 ,为相同浓度干扰气体Petrol的 12倍多 .