CuO‐Doped Mesoporous Silica Hybrid for Rapid and Sensitive Amperometric Detection of Phenolic Compounds

This work constructed an amperometric biosensing platform using CuO doped mesoporous silica hybrid (CuO/SBA‐15) as a carrier. The CuO/SBA‐15 showed a pair of redox peaks of Cu^2+/0. Upon immobilization of tyrosinase on the hybrid, the resulting biosensor exhibited a rapid (<0.5 s) and sensitive amperometric response to phenolic compounds under the optimized conditions. The linear response to catechol ranged from 1.2×10^?9 to 3.0×10^?5 M. The activation energy for enzymatic reaction was calculated to be 26.6 kJ mol^?1. The apparent Michaelis–Menten constants of the enzyme electrode were estimated to be 54.6, 145, 17.0, 74.8 and 633 µM for catechol, phenol, p‐cresol, m‐cresol and dopamine hydrochloride, respectively. The metal oxide doped mesoporous silica hybrid exhibited excellent performance for construction of new biosensors.     

Near‐stoichiometric LiNbO3:ZrO2 single crystal growth by micro pulling down method

Crack‐free, rod‐shaped single crystals of undoped and 0.5, 0.7 and 1.0 mol% ZrO₂‐doped LiNbO₃ with a near‐stoichiometric composition were grown by the micro‐pulling down (μ‐PD) method. The structural properties of the grown crystals were examined by powder X‐ray diffraction (XRD). Electron probe micro analysis (EPMA) of the near‐stoichiometric LiNbO₃ single crystals revealed the homogeneous incorporation of Zr ions. The change in the refractive index and IR transmission spectra of the grown crystals were examined as a function of the Zr concentration. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis and tribological properties of Mo‐doped WSe2 Nanolamellars

The Mo‐doped WSe₂ nanolamellars have been successfully prepared via solid‐state thermal (750 °C) reaction between micro‐sized W, Mo with Se powders under inert atmosphere in a closed reactor and characterized by X‐ray diffractometer (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). It was found that the morphologies of the as‐prepared products changed from microplates to nanolamellars to aggregations composed of nanoparticles with the doping of Mo powders. And the sizes of crystallites evidently reduced while the contents of dopant increased within a certain limit (1 wt.%–7 wt.%). The tribological properties of the as‐prepared products as additives in HVI750 base oil were investigated by UMT‐2 multispecimen tribotester. The friction coefficient of the base oil containing Mo‐doped WSe₂ nanolamellars was lower and more stable than that of WSe₂ nanolamellars. A combination of rolling friction, sliding friction, and stable tribofilm on the rubbing surface could further explain the good friction and wear properties of Mo‐WSe₂ nanoparticles as additives than that of WSe₂.     

多层光纤布拉格光栅的理论与实验研究

从理论和实验两方面研究了在非周期性多层光纤上写入布拉格光栅的光学特性。从耦合模理论出发,讨论了光纤具有多于一个光敏层的情况。在实验室自制的两类多层光纤上写入光栅的实验也表明,该类光栅具备有一般光栅的普遍光学特性,说明在使用多层光纤作为关键部分构建器件时,需要的各类光栅部件能够通过直接在该类光纤上写入光栅实现。紫外光在氢载掺铒多层光纤上写入光栅的实验说明分层的异种元素掺杂将导致芯区应力增加,从而辅助提高光纤的光敏性。     

N型掺杂应变Ge发光性质

应变锗材料具有准直接带特性,而且与标准硅工艺兼容,成为实现硅基发光器件重要的候选材料之一.本文基于vandeWalle形变势理论,计算了应变情况下半导体Ge材料的能带结构以及载流子在导带中的分布;通过分析载流子直接带和间接带间的辐射复合以及俄歇复合、位错等引起的非辐射复合的竞争,计算了N型掺杂张应变Ge材料直接带跃迁的内量子效率和光增益等发光性质.结果表明,张应变可有效增强Ge材料直接带隙跃迁发光.在1.5%张应变条件下,N型掺杂Ge的最大内量子效率可以达到74.6%,光增益可以与III-V族材料相比拟.     

双包层稀土掺杂光纤抽运吸收特性的分析

建立了复折射率纤芯结合有限差分束传播法的双包 层稀土掺杂光纤抽运吸收效率数值模型,利用该模型对几种常 用内包层外边界结构下双包层稀土掺杂光纤的抽运吸收系数进 行了详细的分析,得出相应双包层光纤的抽运吸收特性. 分析结果对双包层稀土掺杂光纤的优化设计具有重要的指导意义.     

温度对p-InN薄膜光电导灵敏度的影响

研究了p型InN的光电导效应。利用分子束外延技术(MBE)法生长出高质量的InN薄膜,在此基础上利用Mg掺杂获得了p-InN。原位反射高能电子衍射(RHEED)表明样品在生长过程中保持二维生长模式,原子力显微镜(AFM)测试结果显示台阶流的生长模式。实验发现,p型InN的光电导灵敏度随温度的升高而降低。其主要原因是当温度升高时,光生载流子浓度降低和样品背景浓度升高共同造成的。     

锂掺杂氧化锌复合缺陷电子结构的杂化密度泛函研究

利用第一原理计算以及杂化密度泛函方法研究了锂掺杂氧化锌的各种缺陷态的电子结构,并通过缺陷形成能考察其在不同气氛中的能量稳定性. 计算结果表明,在通常的气氛条件下,锂离子占据间隙位置和锂离子替换锌离子形成的复合缺陷具有最低的形成能. 锂掺杂氧化锌中,复合缺陷对的形成使氧化锌很难实现p型导电. 然而,当气氛从富锌环境转变到极端氧环境时,锂替代锌离子的缺陷将更加稳定,其形成能将低于锂间隙和锂替代锌复合缺陷的形成能. 因此,锂掺杂氧化锌可以通过在氧气氛中生长,或在富含氧气气氛中退火得到有效的p型电导.     

单一基质白光荧光粉Sr3Bi1-x（PO4）3∶Dy3+的制备与发光性能研究

本文采用高温固相法合成了Sr3Bi1-x(PO4)3∶xDy3+荧光粉。XRD图谱表明合成物质为纯相Sr3Bi(PO4)3晶体结构。主激发峰位于323 nm,348 nm,362 nm,385 nm,423 nm,451 nm和471 nm,分别对应Dy3+的6H15/2到4L19/2,6P7/2,6P5/2,4I13/2,4G11/2,4I15/2,4F9/2的跃迁。主发射峰位于482 nm(4F9/2→6H15/2),575 nm(4F9/2→6H13/2),分别对应于黄光和蓝光发射,其中以348 nm激发得到的峰值最强。研究了不同Dy3+掺杂浓度对发光性能的影响。随着Dy3+浓度的增大,样品的发光强度先增大后减小。当掺杂浓度x=0.08时,发光强度最好。并测试了样品的色坐标,为x=0.33,y=0.35,属于白光区域。     

Magnetoelectrical properties of W doped ZnO thin films

ZnO thin films were deposited on the Si(100) substrate by rf sputtering using a 99.999% pure commercially bought and a home made target under 100 W power. The home made ZnO target, including 1–2% tungsten, was synthesized via solid state reaction. Thin films were deposited under a flow of 70% argon and 30% O₂ gas mixture followed by post-deposition annealing under 1 Torr oxygen atmosphere. Both deposition and post-deposition annealing were done at 420±1 °C. The structural analyses show that the films were in the [0002] preferred direction and that W atoms are bound to the oxygen atoms by replacing the Zn host atoms. Although no specific change was observed in the magnetic properties as a result of W doping, significant changes in the electrical properties were observed, as determined by the longitudinal and transversal magneto-electrical measurements. It was found that the W impurities induce better insulating properties due to lower carrier concentration and higher resistivity values. On the other hand, the enhanced positive magnetoresistivity and the existence of polarized spin currents, which were not specific for pure ZnO thin films, were observed in W doped ZnO films below 10 K.