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31.
Winny Dong Jeffrey Sakamoto Bruce Dunn 《Journal of Sol-Gel Science and Technology》2003,26(1-3):641-644
The electrochemical properties of high surface area transition metal oxide aerogels are extremely interesting because aerogels serve to amplify surface effects. As a result, the electrochemical properties are dominated by surfaces rather than by bulk behavior. In the case of vanadium oxide aerogels this leads to extraordinary electrochemical properties, including an extremely high capacity for lithium and electrochemical responses that are both battery-like and capacitor-like. By exploiting sol-gel synthesis, it is possible to synthesize nanocomposite electrodes in which aerogels are in intimate contact with carbon nanotubes. The resulting nanocomposites exhibit superior electrochemical properties, especially at high discharge. 相似文献
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M. Benatsou B. Capoen M. Bouazaoui W. Tchana J.P. Vilcot 《Journal of Sol-Gel Science and Technology》1998,13(1-3):529-533
Er3+ doped-aluminosilicate thin films were prepared on silica and silica/Si substrates by the sol-gel process and dip-coating. The sol-gel aluminosilicate planar waveguides were prepared from silicon and aluminium alkoxides. Their structural characterization has been carried out by Raman spectroscopy, Atomic Force and Scanning Electron Microscopies. The results indicated that these films present an amorphous structure until an annealing temperature of 900°C, while at temperatures higher than 1000°C, crystallization occurs. An estimate of microcrystallite sizes using Raman spectroscopy is given, which agrees with data from scanning electron microscopy. The optical properties have been investigated by Fluorescence spectroscopy in the visible region. 相似文献
35.
手性液晶掺杂剂(S)┐4┐辛氧基┐4┐(2┐酰氧基┐丙氧基)联苯的合成马汝建李培荣国斌*(华东理工大学化学系上海200237)关键词铁电液晶材料,手性液晶掺杂剂,合成,手征性1997-02-03收稿,1997-08-07修回铁电液晶显示器所用的材料... 相似文献
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The hydrothermal reaction of VOSO4, As2O3, CoC2O4·2H2O and 2,2-bipy yields a novel arsenic-vanadate [CoII(2,2-bpy)2]2[AsIII8VIV 14O42(H2O)]·H2O (1), which is characterized by IR, elemental analysis, TGA, magnetic susceptibility and single crystal X-ray diffraction analysis. X-ray diffraction shows that compound 1 is the first example of tubular arsenic–vanadium cluster containing infinite {[Co(2,2-bpy)2]2[As8V14O42(H2O)]} chain constructed from [As8V14O42(H2O)] clusters interconnected through [Co(2,2-bpy)]2+ units. Crystal data: 1, orthorhombic, P 212121, a=12.1401(2) Å, b=15.8722(1) Å, c=39.9533(5) Å, Z=4.Graphical Abstract: A novel polyoxoarsenicvanadate, [CoII(2,2-bipy)2]2 [AsIII8VIV 14O42(H2O)]·H2O, is depicted along with a tubular hybrid solid with a rhombic tube formed within the chain. 相似文献
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以ZnO纳米柱阵列为模板, 采用溶胶-凝胶法制备出TiO2/ZnO和N掺杂TiO2/ZnO的复合纳米管阵列. 扫描电镜(SEM)、X射线光电子能谱(XPS)和紫外-可见漫反射吸收光谱(UV-Vis)的结果表明: 两种阵列的纳米管均为六角形结构, 直径约为100 nm, 壁厚约为20 nm; 在N-TiO2/ZnO复合纳米管阵列中, 掺入的N离子主要是以N-Ox、N-C和N-N的形式化学吸附在纳米管表面, 仅有少量的N离子以取代式掺杂的方式占据TiO2晶格O的位置; 表面N物种形成的表面态能级和取代式掺杂导致带隙的窄化, 增强了纳米管阵列的光吸收效率, 促进了光生载流子的分离. 光催化实验结果表明, N离子的掺杂有利于N-TiO2/ZnO复合纳米管阵列光催化活性的提高. 相似文献
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39.
Shinichi Kikkawa Kazuteru Nagasaka Mark Bailey Yoshinari Miyamoto 《Journal of solid state chemistry》2007,180(7):1984-1989
Gallium oxynitride, isostructural to hexagonal gallium nitride (h-GaN), was obtained by ammonia nitridation of a precursor prepared from the addition of citric acid to an aqueous solution of gallium nitrate. Gallium oxynitride produced at 750 °C had a small amount of gallium vacancies, and was formulated as (Ga0.89□0.11) (N0.66O0.34) where the symbol □ stands for gallium vacancy. Both the gallium vacancies and oxygen substituted for nitrogen were randomly distributed within the structure. The amount of vacancies decreased with nitridation temperatures in the range of 750-850 °C. Approximately, 10 at% Li+ was doped into the gallium oxynitride, using a similar preparation with the additional presence of lithium nitrate, resulted in the random substitution of Ga3+ in an atomic ratio of Li/Ga<1 at 750 °C. Oxygen was codoped with lithium and substituted nitrogen in the wurtzite-type crystal lattice. These substitutions reduced the electrical conductivity in the gallium oxynitride semiconductor. A new oxynitride, Li2Ga3NO4, was also obtained with Li2CN2 impurity using similar preparations from a mixture of Li/Ga?1. The crystal structure was isostructural with h-GaN, and was refined as P63mc with a=0.31674(1) nm, and c=0.50854(2) nm. The Ga and Li occupancies at the 2b site were refined to be 0.6085 and 0.3915, respectively, assuming that the other 2b site was randomly occupied with 1/5O and 4/5N. When the new compound was washed for over 1 min for the removal of Li2CN2 impurities, it was decomposed to a mixture of α-GaOOH and α-LiGaO2. The as-prepared product with Li/Ga=1 showed the highest intensity in yellow luminescence among the products under excitation at 254 nm. 相似文献
40.
Alkanes (cyclohexane, hexane, heptane isomers) are effectively oxidized in CH3CN at 20–70°C by hydrogen peroxide when catalyzed by a Bu4NVO3-pyrazine-2-carboxylic acid system. Alkyl hydroperoxide is the main product; an alcohol and a ketone or an aldehyde are also formed. Under these conditions benzene is oxidized to give phenol, while alkyl benzenes yield oxygenation products both of the ring and the side chain. It has been assumed that the interaction of H2O2 with VO3
– gives rise to generation of HO radicals and other radical-like vanadium containing species that abstract a hydrogen atom from an alkane, RH. The radical R. formed reacts with O2 to produce ROO. which is then transformed to alkyl hydroperoxide.Presented at the VIII International Symposium on Homogeneous Catalysis (Amsterdam, 1992).Translated fromIzvestiya Akademii Nauk, Seriya Khimicheskaya, No. 1, pp. 64–68, January, 1993. 相似文献