Solvothermal Synthesis and Characterization of （ NH3 CH2 CH2 NH3） HgSnS4 with a Column Structure

IntroductionSulfide-based open-framework materials are in-triguing compounds.They possess very diverse and in-teresting structures,and exhibit potential applicationsas a newgeneration of molecular sieves with the proper-ties of semiconductor materials[1].…     

Solvothermal Synthesis and Characterization of Sheet Structure Containing Adamantane [Hg2Sn2S10]8– Anions

Sheet Rb2HgSnS4 was synthesized solvothermally and characterized by X-ray single crystal diffraction. The compound is comprised of sheets with admantane-like [Hg2Sn2S10]8– units. The crystals belong to the space group C2/c, with the unit cell parameters a=1.1063(2) nm, b=1.1071(2) nm, c=1.5741(3) nm, a=90°, β=100.13(3)°, γ=90°. A reflectance spectroscopy study reveals the nature of the semiconductor with an energy of 2.1 eV for the compound.     

Solvothermal Syntheses of (H2en)2Sn2S6· en and[(H2hmda)3(Hhmda)2](Sn2S6)2Using SnCl4 and S8 as Starting Materials

Three thiostannates (H2en)2Sn2S6·en 1, (Hen)4Sn2S6 2 (en = ethylenediamine, a known compound)and [(H2hmda)3(Hhmda)2](Sn2S6)2 3 (hmda = hexamethylenediamine) were solvothermal conditions. Compound 1 crystallizes in the triclinic system, space group P(1) with a =8.7491(17), b = 10.704(2), c = 12.2031(19) (A), α = 74.888(13), β= 72.998(12), γ= 89.032(15)°, V= 1052.9(3) (A)3, Mr = 614.08, Z = 2, Dc = 1.937 g/cm3,μ = 2.966 mm-1, F(000) = 604, S = 1.211, R = 0.0579 and wR = 0.0770 for 3999 observed reflections with I ＞ 2σ(I); while 3 crystallizes in the triclinic system, space group P(1) with a = 9.8075(13), b = 10.8266(16), c = 14.303(2) A, α =88.611(10), β = 81.030(9), γ= 74.609(9)°, V = 1446.1(4) (A)3, Mr = 1448.78, Z = 1, Dc = 1.664g/cm3, μ = 2.173 mm-1, F(000) = 730, S = 1.173, R = 0.0457 and wR = 0.0667 for 5738 observed reflections with I ＞ 2σ(I). The compounds are composed of dimeric [Sn2S6]4- anions and protonated alkylenediamine cations.