三氯乙酸根离子选择电极的研制

以长链季铵盐为活性物研制成功PVC膜三氯乙酸根离子选择电极。该电极在1×10~(-1)～2×10~(-6)M Cl_3CCOO-离子浓度范围内显示良好的Nernst响应,检测下限为1.2×10~(-6)M。用固定干扰法测定了该电极对Ac~-、Cl~-,SO_4~-、H_2PO_4~-、HCO_3~-、CO_3~-,Cl_2CHCOO~-、NO_3~-等离子的选择性系数,仅NO_3~-有明显干扰。电极适用于中性、偏碱性溶液,在1×10~(-3)M Cl_3CCOONa溶液中,pH 7.0～12.5电势读数稳定。电极连续工作五小时电势变化为±1mV,可以作为一种分析三氯乙酸盐的简便快速方法。这对控制环境污染,判断职业中毒都十分重要。     

低电流密度下恒电流法制备的聚苯胺修饰电极

研究了低电流密度下恒电流法制备的聚苯（ＰＡ）修饰电极的性质及其影响因素，探讨了低电流密度聚合的ＰＡ膜的优点。发现此种条件下聚合的ＰＡ膜具有较好的电荷传输能力，它不仅对Ｂｒ＾－，Ｔｌ＾＋／Ｔｌ等电对的氧化还原反应有更好的电催化活性，而且对Ｈ＾＋的Ｎｅｒｎａｓｔ响应也更接近理论值。     

WS2 超细粉体的固相法合成

WS2 超细粉体的固相法合成;WS2;固相反应;过硫系数;高能球磨;粒度     

高分辨双晶XRF研究酞菁化合物中硫杂质的化学态

酞菁化合物是一种大π键共轭体系的平面分子结构，它以颜色鲜艳、化学稳定性和价格便宜等特点，已在颜料工业上得到了广泛地应用．随着高科技的发展，酞菁化合物的应用进入静电复印的领域．研究中发现：酞普化合物的晶体结构直接影响它的色泽、耐热性、稳定性以及光电导性．在诸多的酸苦晶型中，β-型酞菁是比较稳定的一种，其它晶型届亚稳态型．近年来，光敏性较好的X-型用于激光印刷机感光鼓的载流子产生层［1］．用作静电复印中的酞育粗颜料，一般多为a一型，且含有大量的有机和无机杂质[2]，经高温真空升华提纯后，转变为卢一型．有趣…     

电镀烧结法制备Ti/SnO2-Sb2O4电极的研究

The Ti/SnO₂-Sb₂O₄ electrode has been prepared by the electroplate-sinter method. The effect of SbCl₃ adding amount and sintering temperature on its electrode lifetime and oxygen evolution potential were investigated by means of EDX, SEM and XRD analysis. The results indicated that the electrode appeared the best performance when the SbCl₃ adding amounts was 0.2g and the sintering temperature was 550℃. In optimized conditions Ti substrate was entirely covered by SnO₂-Sb₂O₄ and the combinations among them were tight. Due to the use of electroplate method, the electrical conductivity, the oxygen evolution potential and the electrode lifetime were increased, so the elec-tro-catalytic activity and the electrochemical stability of the prepared electrode were found to be superior.     

Underpotential deposition of tin(II) on a gold disc electrode and determination of tin in a tin plate sample

This work describes a study of the underpotential deposition (UPD) of Sn²⁺ on a polycrystalline gold disc electrode using cyclic voltammetry (CV) and chronocoulometry (CC). Sn²⁺ ions showed well-defined peaks from UPD and UPD stripping (UPD-S) in 1 mol/L HCl solutions, while bulk deposition (BD) and BD stripping (BD-S) of the ions were also observed. The measured UPD shifts, E_UPD, between the UPD-S and the BD-S peaks were more than 200 mV. The UPD charge and the surface coverage of tin were measured by CC. A new method for determining Sn²⁺ was therefore developed, based on the excellent electrochemical properties of the Au/Sn UPD system. A plot of the UPD-DPASV (differential pulse anodic stripping voltammetry) signal versus the Sn(II) concentration was obtained for [Sn(II)] of 1.98×10^–7 to 3.64×10^–5 M. The method developed here has been applied to determine the tin in a tin plate sample.     

Voltammetric Detection of the DNA Interaction with Toluidine Blue

Binding reactions of toluidine blue (TB) with herring fish DNA in pH 6.0 Britton–Robinson (B–R) buffer solution have been investigated by cyclic voltammetry and linear‐sweep voltammetry at a glassy carbon electrode. TB has a couple of well‐defined redox peaks. The addition of DNA into the TB solution resulted in the decrease of the redox‐peak currents and the shift negatively of the anodic peak potential. The values of the electrochemical parameters such as the electron number of the electrochemical reaction, the electron transfer coefficient and the electrochemical reaction standard rate constant in the absence and presence of DNA, as well as the values of binding constant and binding ratio of DNA with TB were obtained. Almost unchanged values of the electrochemical parameters in the absence and presence of DNA show that nonelectroactive complexes were formed when TB interacted with DNA. DNA concentration can be determined by the decrease of the peak current of TB. The binding mode of TB with DNA was discussed.     

Chemical analysis of acidic silicon etch solutions: I. Titrimetric determination of HNO3, HF, and H2SiF6

The chemical etching of silicon using HF-HNO₃ mixtures is a widely used process in the processing of silicon wafers for microelectronic or photovoltaic applications. The control of the etch bath composition is the necessary condition for an effective bath utilization, for the replenishment of the consumed acids, and to maintain a certain etch rate. The present paper describes two methods for the total analysis of the individual etch bath constituents HF, HNO₃, and H₂SiF₆. Both methods start with an aqueous acid-base titration determining the total acid concentration and the concentration of H₂SiF₆. The first method is an acid-base titration using a 0.1 mol L⁻¹ methanolic solution of cyclohexylamine (CHA) as non-aqueous titrant to determine the content of nitric acid. Then, the amount of hydrofluoric acid is calculated from the difference between the total acid and nitric acid content. The second method is based on the determination of the total fluoride concentration using a fluoride ion-selective electrode (F-ISE). The content of hydrofluoric acid is obtained from the difference between the total fluoride content and the amount of fluoride bound as H₂SiF₆. The amount of nitric acid results finally calculated as difference to the total acid content.     

Adsorption of poly(ethylene glycol)s on mercury/aqueous solution interface 1. Kinetics of PEG 8000 adsorption

In order to study the influence of the adsorption of fulvic compounds on voltammetric signals and to understand better the adsorption of these compounds on hydrophobic natural water interfaces, adsorption studies of macromolecules such as poly(ethylene glycol) (HO(CH₂CH₂O)_n) with molecular weight of 8000 were done on the mercury/water interface by a.c. voltammetry at the potential of zero charge. The maximum surface concentration, adsorption equilibrium constant and adsorption rate constant have been determined from the global adsorption mechanism, controlled by two determining steps: diffusion and kinetics of adsorption at the interface.