Surface structures formed by individual adsorption and coadsorption of Mn and Bi on Cu(0 0 1), studied by LEED

We have studied the individual adsorption of Mn and Bi, and their coadsorption on Cu(0 0 1) by low-energy electron diffraction (LEED). For Mn, we have determined the c(2 × 2) structure formed at 300 K, whose structure had been determined by several methods. We reconfirmed by a tensor LEED analysis that it is a substitutional structure and that a previously reported large corrugation (0.30 Å) between substitutional Mn and remaining surface Cu atoms coincides perfectly with the present value. In the individual adsorption of Bi, we have found a c(4 × 2) structure, which is formed by cooling below ∼250 K a surface prepared by Bi deposition of ∼0.25 ML coverage at 300 K where streaky half-order LEED spots appear. The c(4 × 2) structure has been determined by the tensor LEED analysis at 130 K and it is a substitutional structure. In the coadsorption, we found a c(6 × 4) structure, which has been determined by the tensor LEED analysis. It is very similar to the previously determined structure of the c(6 × 4) formed by coadsorption of Mg and Bi, and embedded MnBi₄ clusters are arranged in the top Cu layer instead of MgBi₄. Large lateral displacements of Bi atoms in the c(6 × 4)-(Mn + Bi) suggest that the Mn atoms undergo the size-enhancement caused by their large magnetic moment.     

主成分分析在地区科技竞争力评测中的应用

近年来对于科技竞争力的研究在国内方兴未艾,其中对于科技竞争力的评测是众多学者研究的重点和热点,也是各级决策者最为关心、最为重要的课题之一。本文根据科技竞争力概念和内涵来确定评测指标体系的构成要素,建立了评测指标体系,并利用主成分分析方法对采集来的数据进行分析,得到最终的评测结果。     

超尺寸物品装箱问题及其算法

本文探讨一类新装箱问题-超尺寸物品装箱问题。针对实际解决该问题的两涉法，我们提出了一个评价效率更高的目标函数，证明了在此目标函数下两步法的渐近最坏比不小于2，并给出了渐近量坏比与拆分次数的关系。最后本文提出了一种不同于两步法的新在线算法MA，证明了在新目标函数下其渐近最坏比不超过7/4。     

Estimating a reduced rank regression model for non-normal variables

A method using third order moments for estimating the regression coefficients as well as the latent state scores of the reduced-rank regression model when the latent variable(s) are non-normally distributed is presented in this paper. It is shown that the factor analysis type indeterminacy of the regression coefficient matrices is eliminated. A real life example of the proposed method is presented. Differences of this solution with the reduced-rank regression eigen solution are discussed.     

Stabilizing management of fluctuating resources

We consider a resource management problem in which the management objective is to minimize fluctuations in resource stocks. Stabilizing management policies constitute the designing of memoryless state feedback control strategies for a discrete time resource model which contains unknown but bounded fluctuations. We also show that the problem of maximizing sustainable yield in an uncertain fishery can be considered as the problem of stabilizing of the stock level.The paper corresponds to an invited talk at the 14th Symposium on Operations Research, Ulm, September 6–8, 1989.The support by Yrjö Jahnsson Foundation is gratefully acknowledged.This work was supported by NSF and AFOSR under grant ECS 8602524.     

Sensitivity analysis for discrete optimal control problems

We present local sensitivity analysis for discrete optimal control problems with varying endpoints in the case when the customary regularity of boundary conditions can be violated. We study the behavior of the optimal solutions subject to parametric perturbations of the problem.     

用变形全息透镜实现变形分数傅里叶变换

利用一发散点光源和一束倾斜平行光制作出在两个垂直方向上具有不同焦距的变形全息透镜,且用此全息元件实现了变形分数傅里叶变换。变形全息透镜两个方向上的焦距随全息记录条件和再现条件而变化,分析了用这种全息透镜实现变形分数傅里叶变换的条件。实验表明,用该元件能够方便地实现任意级次的变形分数傅里叶变换。     

超声光栅实验及其多普勒频移的一种简单研究方法

采用光子学方法,对超声光栅衍射实验和实验中出现的多普勒频移现象进行了研究,所得结论与采用光的波动性观点的惠更斯-菲涅耳原理及傅里叶变换等常规方法相同.该方法进一步加深了对衍射的本质和光的粒子性的理解并对光子的信息传递能力有初步的认识.     

Zone specificity in low energy electron stimulated desorption of Cl from reconstructed Si(1 1 1)-7 × 7:Cl surfaces

Diffraction in electron stimulated desorption has revealed a propensity for Cl⁺ desorption from rest atom vs. adatom areas and unfaulted vs. faulted zones of Cl-terminated Si(1 1 1)-(7 × 7) surfaces. We associate the 15 eV ± 1 eV threshold with ionization of Si-Cl σ-bonding surface states and formation of screened two-hole states with Si 3s character. Similar specificity is observed from A and B reconstructions. This can be due to reduced screening in unfaulted regions and increased hole localization in Si back-bonds within faulted regions.