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471.
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金属铱络合物由于其特殊的光物理化学性质而得到了广泛的关注。主要研究了配体为苯并三氮唑衍生物的三种新型铱配合物,Ir(TBT)、Ir(EBT)和Ir(CBT)的合成及表征,并对其物理性能进行了一定的研究。通过研究发现该类铱化合物的最大发射波长可以通过修饰配体调节,其中化合物Ir(TBT)的最大发光峰为598nm,并且利用Gaussian 03、B3LYP/6-31G*程序对三个配体进行量子化学计算,计算结果与实验结果吻合。通过差热分析法对其进行热稳定性测试后发现其玻璃化温度为133℃,该类化合物在电致发光领域具有潜在的应用价值。 相似文献
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QIU Ling XIAO He-Ming② GONG Xue-Dong JU Xue-Hai 《结构化学》2006,25(11):1309-1320
1 INTRODUCTION Nowadays, HEDMs have been receiving heated attention because of their superior explosive per- formances to the currently used materials. Searching for novel HEDMs to meet the future demands has become one of the most activated regions and seems to be never ending. As is well known, nitramines have important applications in both civilian and military fields for a long time. This group of com- pounds is still a source of explosives or propellants that possess predominantl… 相似文献
475.
紧凑式低温换热器的发展概况 总被引:1,自引:0,他引:1
介绍了一些目前低温与制冷领域中使用的紧凑式换热器,对其特点、性能以及发展动态和研究方向进行了细致的分析和综述。同时也给出了一些观点,为低温换热器的设计及以后的深入研究提供参考。 相似文献
476.
Thenahandi Prasanthi Deepthika De Silva Sang Gil Youm Frank R. Fronczek Girija Sahasrabudhe Evgueni E. Nesterov Isiah M. Warner 《Molecules (Basel, Switzerland)》2021,26(21)
Three novel small organic heterocyclic compounds: 2-(1,2-diphenyl)-1H-benzimidazole-7-tert-butylpyrene (compound A), 1,3-di(1,2-diphenyl)-1H-benzimidazole-7-tert-butylpyrene (compound B), and 1,3,6,8-tetra(1,2-diphenyl)-1H-benzimidazolepyrene (compound C) were synthesized and characterized for possible applications as blue OLED emitters. The specific molecular design targeted decreasing intermolecular aggregation and disrupting crystallinity in the solid-state, in order to reduce dye aggregation, and thus obtain efficient pure blue photo- and electroluminescence. Accordingly, the new compounds displayed reasonably high spectral purity in both solution- and solid-states with average CIE coordinates of (0.160 ± 0.005, 0.029 ± 0.009) in solution and (0.152 ± 0.007, 0.126 ± 0.005) in solid-state. These compounds showed a systematic decrease in degree of crystallinity and intermolecular aggregation due to increasing steric hindrance, as revealed using powder X-ray diffraction analysis and spectroscopic studies. An organic light-emitting diode (OLED) prototype fabricated using compound B as the non-doped emissive layer displayed an external quantum efficiency (EQE) of 0.35 (±0.04)% and luminance 100 (±6) cd m−2 at 5.5 V with an essentially pure blue electroluminescence corresponding to CIE coordinates of (0.1482, 0.1300). The highest EQE observed from this OLED prototype was 4.3 (±0.3)% at 3.5 V, and the highest luminance of 290 (±10) cd m−2 at 7.5 V. These values were found comparable to characteristics of the best pure blue OLED devices based on simple fluorescent small-molecule organic chromophores. 相似文献
477.
Longitudinal tunneling transport in the low-dimensional heterojunction structures induced by the excitonic Coulomb interaction has been formulated and discussed in the framework of Fermi's golden rule. We have investigated the tunneling transition of free carriers to quantum-well Wannier–Mott excitons incorporated in the sequential tunneling Hamiltonian. The modeling is evaluated by a set of coupled rate equations involving subband states of electron, hole and exciton. The exciton-assisted tunneling (EAT) phenomenon has its characteristic fingerprint causing tunneling current prior to the resonance electric fields, and a significant modulation of the I–V characteristics. It is also found that the bias offset and the FWHM of the EAT current spectrum can be comparable to that of resonant tunneling (RT) current, depending both on the 2D hole density of the confined subband and the excitonic properties in the active region. The EAT effect has a different I–V spectral line shape, compared to that of the RT or its replica, tailing off in the resonance regime induced by the exciton binding energy. 相似文献
478.
21世纪的光学和光电子学讲座 第二讲 硅基发光材料和器件研究 总被引:2,自引:0,他引:2
硅基发光材料和器件是实现光电子集成的关键.文章评述了目前取得较大进展的几种主要硅基发光材料和器件的研究,包括掺饵硅,多孔硅,纳米硅以及Si/SiO2 等超晶格结构材料.展望了这些不同硅基发光材料作为发光器件和在光电集成中的发展前景 相似文献
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本文提出了一种基于砷化镓(GaAs)材料且具有全方位光管理能力的纳米方形光阱结构.通过光学模拟可知,该结构在较大结构参数范围内具有优异的全向光管理能力.当该结构的有效厚度为407 nm时,在AM1.5G光照下,其光电流密度可达29.51 mA/cm~2,而在同样条件下,2000 nm厚的平面GaAs结构只能产生19.80 mA/cm~2的光电流密度.由光电模拟可知,为了获得合理的高光电转换效率,应使少数载流子寿命大于等于1.0×10~(-7 )s,表面复合速率小于等于100 s/cm. 相似文献