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61.
It is proved that if M^n is an n-dimensional complete submanifold with parallel mean curvature vector and flat normal bundle in S^n+p(1), and if supM S 〈 α(n, H), where α(n,H)=n+n^3/2(n-1)H^2-n(n-2)/n(n-1)√n^2H^4+4(n-1)H^2,then M^n must be the totally urnbilical sphere S^n(1/√1+H^2).An example to show that the pinching constant α(n, H) appears optimal is given. 相似文献
62.
Ying-bo Han 《高校应用数学学报(英文版)》2008,23(1):65-68
A class of twisted special Lagrangian submanifolds in T*R^n and a kind of austere submanifold from conormal bundle of minimal surface of R^3 are constructed. 相似文献
63.
A class of twisted special Lagrangian submanifolds in T~*R~n and a kind of austere submanifold from conormal bundle of minimal surface of R~3 are constructed. 相似文献
64.
D. H. BOO C. G. PARK 《数学年刊B辑(英文版)》2000,(4)
1. IntroductionGiven a locally compact abelian group G and a multiplier p on G, one can associate tothem the twisted group C*-algebra C*(G, p), which is the universal object for unitary prepresentations of G. C* (Zm, p) is said to be a noncommutative torns of rank m and denotedby A.. The multiplier p determines a subgroup S. of G, called its symmetry group, andthe multiplier p is called totally skew if the symmetry group S. is trivial. And A. is calledcompletely irrational if p is totally… 相似文献
65.
Distributions of simultaneous fiber failures—bursts—in loaded fiber bundles are studied considering inertia and damping. Resulting burst size distributions have universal properties: all approach the power law DΔΔ−2.5 for larger burst sizes Δ. Momentary burst size distributions evolve with increasing damage and do not follow power laws but are still universal. Finally, it is briefly outlined how to use distribution progression to assess damage state. 相似文献
66.
Aïssa Wade 《Annals of Global Analysis and Geometry》2008,33(3):207-217
Poisson fiber bundles are studied. We give sufficient conditions for the existence of a Dirac structure on the total space
of a Poisson fiber bundle endowed with a compatible connection. We also provide some examples.
相似文献
67.
《中国物理 B》2021,30(7):78102-078102
The self-catalyzed growth of Ga As nanowires(NWs) on silicon(Si) is an effective way to achieve integration between group III–V elements and Si. High-crystallinity uniform Ga As NW arrays were grown by solid-source molecular beam epitaxy(MBE). In this paper, we describe systematic experiments which indicate that the substrate treatment is crucial to the highly crystalline and uniform growth of one-dimensional nanomaterials. The influence of natural oxidation time on the crystallinity and uniformity of Ga As NW arrays was investigated and is discussed in detail. The Ga As NW crystallinity and uniformity are maximized after 20 days of natural oxidation time. This work provides a new solution for producing high-crystallinity uniform III–V nanowire arrays on wafer-scale Si substrates. The highly crystalline uniform NW arrays are expected to be useful for NW-based optical interconnects and Si platform optoelectronic devices. 相似文献
68.
In-plane oriented CH_3NH_3PbI_3 nanowire suppression of the interface electron transfer to PCBM 下载免费PDF全文
《中国物理 B》2021,30(6):66801-066801
One-dimensional nanowire is an important candidate for lead-halide perovskite-based photonic detectors and solar cells. Its surface population, diameter, and growth direction, etc., are critical for device performance. In this research,we carried out a detailed study on electron transfer process at the interface of nanowire CH_3 NH_3 PbI_3(N-MAPbI_3)/Phenyl C61 butyric acid methyl-ester synonym(PCBM), as well as the interface of compact CH_3 NH_3 PbI_3(C-MAPbI_3)/PCBM by transient absorption spectroscopy. By comparing the carrier recombination dynamics of N-MAPbI_3, N-MAPbI_3/PCBM,C-MAPbI_3, and C-MAPbI_3/PCBM from picosecond(ps) to hundred nanosecond(ns) time scale, it is demonstrated that electron transfer at N-MAPbI_3/PCBM interface is less efficient than that at C-MAPbI_3/PCBM interface. In addition, electron transfer efficiency at C-MAPbI_3/PCBM interface was found to be excitation density-dependent, and it reduces with photo-generation carrier concentration increasing in a range from 1.0 × 1018 cm~(-3)–4.0 × 1018 cm~(-3). Hot electron transfer,which leads to acceleration of electron transfer between the interfaces, was also visualized as carrier concentration increases from 1.0 × 10~(18) cm~(-3)–2.2 × 10~(18) cm~(-3). 相似文献
69.
作为马约拉纳费米子的“凝聚态版本”,马约拉纳零能模是当前凝聚态物理领域的研究热点.马约拉纳零能模满足非阿贝尔统计,可以构建受拓扑保护的量子比特.这种由空间上分离的马约拉纳零能模构建的拓扑量子比特不易受局域噪声的干扰,具有长的退相干时间,在容错量子计算中具有重要的应用前景.半导体/超导体纳米线是研究马约拉纳零能模和拓扑量子计算的理想实验平台.本文综述了高质量半导体纳米线外延生长、半导体/超导体异质结制备以及相应的马约拉纳零能模研究方面的进展,并对半导体/超导体纳米线在量子计算中的应用前景进行了展望. 相似文献
70.
本文以K2SO4为矿化剂,在100 ℃低温水热条件下,制备出大量形貌均一、高分散的直径约40 nm、长度为2~3 μm的α-FeOOH纳米线。该纳米线在300 ℃煅烧2 h后,得到一维形貌保持良好且表面具有多孔结构、长径比可达20的α-Fe2O3纳米线。通过XRD、FTIR、TG-DSC、HRTEM、SAED以及N2物理吸附技术对产物的形貌和结构进行了表征。研究发现,无机盐对一维纳米线形貌的控制至关重要,还详细讨论了K2SO4在α-FeOOH纳米线的成核和生长过程中所起的作用。 相似文献