Ellipsometric analysis and optical absorption characterization of gallium phosphide nanoparticulate thin film

Gallium phosphide (GaP) nanoparticulate thin films were easily fabricated by colloidal suspension deposition via GaP nanoparticles dispersed in N,N-dimethylformamide. The microstructure of the film was performed by x-ray diffraction, high resolution transmission electron microscopy and field emission scanning electron microscopy. The film was further investigated by spectroscopic ellipsometry. After the model GaP+void|SiO₂ was built and an effective medium approximation was adopted, the values of the refractive index n and the extinction coefficient k were calculated for the energy range of 0.75 eV-4.0 eV using the dispersion formula in DeltaPsi2 software. The absorption coefficient of the film was calculated from its k and its energy gaps were further estimated according to the Tauc equation, which were further verified by its fluorescence spectrum measurement. The structure and optical absorption properties of the nanoparticulate films are promising for their potential applications in hybrid solar cells.     

4 inch低位错密度InP单晶的VGF生长及性质研究

采用高压垂直温度梯度凝固法(VGF)生长了非掺、掺硫和掺铁的4 inch直径(100)InP单晶,获得的单晶的平均位错密度均小于5000 cm-2.对4 inch InP晶片上进行多点X-射线双晶衍射测试, 其(004)X-射线双晶衍射峰的半峰宽约为30弧秒且分布均匀.与液封直拉法(LEC)相比, VGF-InP单晶生长过程的温度梯度很低,导致其孪晶出现的几率显著增加.然而大量晶体生长结果表明VGF-InP晶锭上出现孪晶后,通常晶体的生长方向仍为(100)方向,这确保从生长的4 inchVGF-InP(100)晶锭上仍能获得相当数量的2~4 inch(100)晶片.由于铁在InP中的分凝系数很小,掺Fe-InP单晶VGF生长过程中容易出现组份过冷,导致多晶生长.通过控制生长温度梯度及掺铁量,可获得较高的掺铁InP单晶成晶率.对VGF-InP单晶的电学性质、位错密度及位错的分布特点、晶体完整性等进行了研究.     

Electrical and structural properties of Pd/V/n‐type InP (111) Schottky structure as a function of annealing temperature

Palladium/Vanadium (Pd/V) Schottky structures are fabricated on n‐type InP (100) and the electrical, structural and surface morphological characteristics have been studied at different annealing temperatures. The extracted barrier height of as‐deposited Pd/V/n‐InP Schottky diode is 0.59 eV (I–V) and 0.79 eV (C–V), respectively. However, the Schottky barrier height of the Pd/V Schottky contact slightly increases to 0.61 eV (I–V) and 0.84 eV (C–V) when the contact is annealed at 200 °C for 1 min. It is observed that the Schottky barrier height of the contact slightly decreases after annealing at 300, 400 and 500 °C for 1 min in N₂ atmosphere. From the above observations, it is clear that the electrical characteristics of Pd/V Schottky contacts improve after annealing at 200 °C. This indicates that the optimum annealing temperature for the Pd/V Schottky contact is 200 °C. Basing on the auger electron spectroscopy and X‐ray diffraction results, the formation of Pd‐In intermetallic compound at the interface may be the reason for the increase of barrier height upon annealing at 200 °C. The formation of phosphide phases at the Pd/V/n‐InP interface could be the reason for the degradation in the barrier heights after annealing at 300, 400 and 500 °C. From the AFM results, it is evident that the overall surface morphology of the Pd/V Schottky contacts is fairly smooth. Copyright © 2011 John Wiley & Sons, Ltd.     

半绝缘磷化铟中与非化学配比有关的深能级缺陷

在不同的化学配比条件下制备了半绝缘磷化铟材料,其中包括配比和富铟熔体中的铁掺杂以及磷气氛和磷化铁气氛下高温退火非掺杂晶片.在这些半绝缘磷化铟材料中检测到了与非化学配比有关的深能级缺陷.通过对大量的原生掺铁和非掺退火半绝缘磷化铟材料中的缺陷的研究,发现原生深能级缺陷与材料的电学参数质量密切相关.迁移率低、热稳定性差的掺铁半绝缘磷化铟材料中有大量的能级位于0.1～0.4eV之间的缺陷.高温退火非掺磷化铟抑制了这些缺陷的产生,获得了迁移率高、均匀性好的高质量半绝缘材料.根据这些结果,我们提出了一种通过控制化学配比制备高质量半绝缘磷化铟材料的方法.     

由非晶态Ni-P低温制备Ni2P催化剂及其对二苯并噻吩加氢脱硫的催化性能

 以非晶态Ni-P合金为前驱体,在低温下通过PH3处理制备了Ni2P/SiO2-Al2O3催化剂,并用X射线衍射(XRD)、 透射电镜(TEM)、 电感耦合等离子体发射光谱、 N2吸附和X射线光电子能谱(XPS)进行了表征,以二苯并噻吩为探针,在小型连续流动固定床反应器上考察了催化剂的加氢脱硫性能. XRD结果表明,在200～300 ℃范围内前驱体都可以完全转化为Ni2P, 随着磷化温度的升高,晶体结构变得越来越完整. TEM观察发现, Ni-P粒子和Ni2P粒子的平均尺寸都在40～50 nm, 并且都能够高分散在SiO2-Al2O3载体上. XPS结果表明,不论是非负载还是SiO2-Al2O3负载的Ni2P, 表层主要为Ni2P和钝化层Ni3(PO4)2. Ni2P/SiO2-Al2O3催化剂在实验范围内表现出很好的二苯并噻吩加氢脱硫性能.     

Self‐Supported FeP‐CoMoP Hierarchical Nanostructures for Efficient Hydrogen Evolution

Fabricating highly efficient electrocatalysts for electrochemical hydrogen generation is a top priority to relief the global energy crisis and environmental contamination. Herein, a rational synthetic strategy is developed for constructing well‐defined FeP?CoMoP hierarchical nanostructures (HNSs). In general terms, the self‐supported Co nanorods (NRs) are grown on conductive carbon cloth and directly serve as a self‐sacrificing template. After solvothermal treatment, Co NRs are converted into well‐ordered Co?Mo nanotubes (NTs). Subsequently, the small‐sized Fe oxyhydroxide nanorods arrays are hydrothermally grown on the surface of Co?Mo NTs to form Fe?Co?Mo HNSs, which are then converted into FeP?CoMoP HNSs through a facile phosphorization treatment. FeP?CoMoP HNSs display high activity for hydrogen evolution reaction (HER) with an ultralow cathodic overpotential of 33 mV at 10 mA cm^?2 and a Tafel slope of 51 mV dec^?1. Moreover, FeP?CoMoP HNSs also possess an excellent electrochemical durability in alkaline media. First‐principles density functional theory (DFT) calculations demonstrate that the remarkable HER activitiy of FeP?CoMoP HNSs originates from the synergistic effect between FeP and CoMoP.     

Electronic and structural properties of the InP(1 0 0)(2 × 4) surface studied by core-level photoemission and scanning tunneling microscopy

The (2 × 4)-reconstructed InP(1 0 0) surfaces have been investigated by scanning tunneling microscopy (STM) and synchrotron-radiation core-level photoelectron spectroscopy. STM observations show that the α2 model describes the atomic structure of the InP(1 0 0)(2 × 4) surface in a limited range of the surface-preparation conditions, as predicted theoretically but not previously observed. STM results also support the accuracy of the previously found mixed-dimer structure for the InP(1 0 0)(2 × 4) surface under less P-rich conditions. A study of P 2p core-level photoelectron spectra, measured with different surface-sensitivity conditions, demonstrates that P 2p photoemission from the mixed-dimer InP(1 0 0)(2 × 4) surface consists of at least two surface-core-level-shift (SCLS) components which have kinetic energies approximately 0.4 eV higher and 0.3 eV lower than the bulk emission. On the basis of the surface-sensitivity difference between these SCLSs, they are related to the third-layer and top-layer P sites in the mixed-dimer structure, respectively.     

Ab initio calculations and dynamical properties of the Se:InP(1 1 0) and Te:InP(1 1 0)

We present results of ab initio theoretical investigations of the structural and dynamical properties of the Se:InP(1 1 0) and Te:InP(1 1 0) surfaces, by employing the plane wave pseudopotential method, the local density approximation of the density functional theory, and a linear response scheme. For both adsorbates we have used the so-called exchange geometry (the chalcogen atoms replacing P in the top two atomic layers). A detailed discussion is provided of the relaxed surface geometry and phonon dispersion curves along two principal symmetry directions. It is found that the adsorption of Se (or Te) atoms on InP(1 1 0) leads to phonon modes in the acoustic-optical gap region for bulk InP. The characteristic atomic displacement patterns of selected phonon modes on these surfaces have been compared and contrasted with those on the clean InP(1 1 0) surface.     

A facile high-yield solvothermal route to tin phosphide Sn4P3

An effective method of synthesis of tin phosphide Sn₄P₃ starting from metallic tin and amorphous red phosphorus by a low-temperature (200 °C) solvothermal reaction in ethylenediamine is offered. The key parameters of this process - duration, temperature, and the ratio of initial components (Sn/P) are studied. The structure, phase composition, and morphology of the products are investigated using powder X-ray diffraction and scanning electron microscopy. Different synthetic ways for tin phosphide are discussed and compared with the proposed one. The mechanism of solvothermal preparation of tin phosphide in ethylenediamine is discussed. It is shown that the proposed solvothermal method opens up the possibility of preparing other metal-rich phosphides.     

L3C3P3: Tricarbontriphosphide Tricyclic Radicals and Cations Stabilized by Cyclic (alkyl)(amino)carbenes

Alkynes usually oligomerize to give rings with a conjugated π‐electron system. In contrast, phosphaalkynes, R?C≡P, frequently give compounds with polycyclic structures, which are thermodynamically more stable than the corresponding π‐conjugated isomers. The syntheses of the first C₃P₃ tricyclic compounds are reported with either radical or cationic ground states stabilized by cyclic (alkyl)(amino)carbenes (CAACs). These compounds may be considered as examples of tricarbontriphosphide coordinated by carbenes and are likely formed via trimerization of the corresponding mono‐radicals CAAC‐CP^.. The mechanism for the formation of these tricarbontriphosphide radicals has been rationalized by a combination of experiments and DFT calculations.