Charge density fluctuation of low frequency in a dusty plasma

The charge density fluctuation of low frequency in a dusty plasma, which is derived from the longitudinal dielectric permittivity of the dusty plasma, has been studied by kinetic theory. The results show that theP value, which describes the relative charge density on the dust in the plasma, and the charging frequency of a dust particle Ω _c , which describes the ratio of charge changing of the dust particles, determine the character of the charge density fluctuation of low frequency. For a dusty plasma ofP≪1, when the charging frequency Ω _c , is much smaller than the dusty plasma frequency ω_d, there is a strong charge density fluctuation which is of character of dust acoustic eigenwave. For a dusty plasma ofP≫1, when the frequency Ω _c , is much larger than ω _d there are weaker fluctuations with a wide spectrum. The results have been applied to the ionosphere and the range of radius and density of dust particles is found, where a strong charge density fluctuation of low frequency should exist.     

对数似然比与整值随机变量序列的一类强律

本文引进对数似然比作为整值随机变量序列相对于服从几何分布的独立随机变量序列的偏差的一种度量,并通过限制对数似然比给出了样本空间的一个子集.在此子集上得到了一类用不等式表示的强律,其中包含整值随机变量序列与相对熵密度及几何分布的熵函数有关的若干极限性质.     

Steady-state electrolysis at a grooved or ridged plane

This study concerns an infinite plane whose smoothness is marred by a single defect: either a groove or a ridge. The blemished plane serves as an electrode supporting a diffusion-controlled steady-state process. By using a convenient coordinate transformation, the local current density at all points on the surface is determined exactly. The results are found to confirm intuitive expectations. Thus, compared with normal values on the plane remote from a groove, the electron transfer rate is diminished within the groove but enhanced along its margins. Similarly, an abnormally large transfer rate is encountered high on the ridge but the rate is subnormal on its lower flanks. The total current is demonstrated to be unchanged by the presence of the blemish. Received: 27 September 1996 / Accepted: 11 March 1997     

Some results from 50 years' research on surface forces

A review is presented about research on surface forces and surface interactions conducted over the past half-century, with some emphasis on the pioneering contributions of the Department of Surface Phenomena at the Institute of Physical Chemistry of the USSR Academy of Sciences.     

关于非齐次m阶马氏信源的渐近均分割性

本文研究非齐次m阶马氏信源的渐近均分割性，首先我们得到关于此种信源m 1元函数的一类强极限定理，作为推论，得到关于任意非齐次m阶马氏信源状态和熵密度的几个极限定理，最后得到一类非齐次m阶马氏信源的渐近均分割性。     

微通道板真空体电阻与Ⅱ代倒象微光管匹配关系的研究

国内研制的20/30Ⅱ代倒象微光管经常出现微通道板真空体电阻偏高或偏低的问题,直接影响Ⅱ代倒象微光管荧光屏的亮度和目标分辨力,严重影响微光管的质量。经过对20/30Ⅱ代倒象微光管的研制和理论分析,证明英国马拉德公司对用于××1383Ⅱ代倒象微光管的H36微通道板技术条件中真空体电阻技术指标的规定也存在一定的问题。本文从目前国内外工艺水平和有关文献资料的分析出发,进行专题研究。本文中所推导的计算公式和对文献资料提供的技术数据的推导分析,同样适用于其他型号微通道板的真空体电阻与相应Ⅱ代、Ⅲ代微光管匹配关系的计算与研究。     

热辐射驱动烧蚀平面金靶的数值定标定律

利用一维辐射流体力学编码数值研究了辐射烧蚀波在平面金靶中的传播情况,并在常温边界条件下得到了辐射流、烧蚀压、质量烧蚀率和特征等离子体密度的定标定律。     

Differential density matrix overlap: an index for assessment of electron correlation in atoms and molecules

Summary A new index, called the differential density matrix overlap (DDMO), is proposed for assessment of the electron correlation effects in atoms and molecules. DDMO can be easily calculated as the negative value of the correlation energy derivative with respect to the relative position of the occupied and virtual orbitals. DDMO is transparent to physical interpretation. It can serve as a tool for analyzing the accuracy of approximate electron correlation methods and the validity of the Hartree-Fock wavefunction as the zeroth-order approximation. The properties of DDMO are discussed using test calculations on 11 atoms and molecules as an example.     

On the properties of solutions to the Goursat-Darboux problem with boundary and distributed controls

We consider a control system described by the Goursat-Darboux equation. The system is controlled by distributed and boundary controls. The controls are subject to the constraints given as multivalued mappings with closed, possibly nonconvex, values depending on the phase variable. Alongside the initial constraints, we consider the convexified constraints and the constraints whose values are the extreme points of the convexified constraints. We study the questions of existence of solutions and establish connections between the solutions under various constraints.     

应变Si1-xGex层中p型杂质电离常温和低温特性

本文采用解析的方法计算了应变Si1-xGex层中p型杂质电离度与Ge组分x、温度T以及掺杂浓度N的关系.发现常温时,在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度的先变小,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加先变大,而后几乎不变;重掺杂时,杂质电离能变为0后,杂质电离度为1.低温下,轻掺杂时,载流子低温冻析效应较为明显,杂质的电离度普遍较小,当掺杂浓度大于Mott转换点时,载流子冻析效应不再明显,电离率迅速上升到1.在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度先变小,后变大,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加变大;重掺杂时,杂质电离能变为0后,杂质电离度为1.