Chemical analysis of acidic silicon etch solutions: I. Titrimetric determination of HNO3, HF, and H2SiF6

The chemical etching of silicon using HF-HNO₃ mixtures is a widely used process in the processing of silicon wafers for microelectronic or photovoltaic applications. The control of the etch bath composition is the necessary condition for an effective bath utilization, for the replenishment of the consumed acids, and to maintain a certain etch rate. The present paper describes two methods for the total analysis of the individual etch bath constituents HF, HNO₃, and H₂SiF₆. Both methods start with an aqueous acid-base titration determining the total acid concentration and the concentration of H₂SiF₆. The first method is an acid-base titration using a 0.1 mol L⁻¹ methanolic solution of cyclohexylamine (CHA) as non-aqueous titrant to determine the content of nitric acid. Then, the amount of hydrofluoric acid is calculated from the difference between the total acid and nitric acid content. The second method is based on the determination of the total fluoride concentration using a fluoride ion-selective electrode (F-ISE). The content of hydrofluoric acid is obtained from the difference between the total fluoride content and the amount of fluoride bound as H₂SiF₆. The amount of nitric acid results finally calculated as difference to the total acid content.     

Adsorption of poly(ethylene glycol)s on mercury/aqueous solution interface 1. Kinetics of PEG 8000 adsorption

In order to study the influence of the adsorption of fulvic compounds on voltammetric signals and to understand better the adsorption of these compounds on hydrophobic natural water interfaces, adsorption studies of macromolecules such as poly(ethylene glycol) (HO(CH₂CH₂O)_n) with molecular weight of 8000 were done on the mercury/water interface by a.c. voltammetry at the potential of zero charge. The maximum surface concentration, adsorption equilibrium constant and adsorption rate constant have been determined from the global adsorption mechanism, controlled by two determining steps: diffusion and kinetics of adsorption at the interface.     

过氧化物模拟酶在介体型生物传感器方面应用初探

meso-四(4-磺基苯)卟啉锰(Ⅲ)作为过氧化物模拟酶可催化H_2O_2与K_4Fe(CN)_6反应。电流响应与H_2O_2浓度在3.0×10~(-4)～1.0×10~(-3)mol/L范围内呈线性关系。重现性和回收率良好。抗坏血酸和DL-半胱氨酸干扰严重。     

AB5型球形合金粉的表面处理研究

由雾化（Gas－atomization）技术制备的AB5型球形合金粉，作为镍氢电池负极材料具有很多优点：粉粒呈球状便于在多孔基片内装填；耐压耐磨性好；抗碱能力强且不易解胶．但它的电化学初活性差，难于活化．有碍电池中的应用．采用适宜的氧化剂（铜盐水溶液）处理，使球粒表面形成一个富铜、富镍亚层，显著地改善了合金粉的电化学活性．经处理的MlNi3.8CO0.5Mn0.3Al0.4球形合金粉，仅3次充放电循环其放电量便可达到240mA·h·g-1；而未经处理的同一合金粉即便经6次充放电循环其放电量也只有103mA·h·g-1．     

裸玻碳电极伏安测定甲氰咪胍

提出了裸ＧＣＥ不需任何处理测定甲氰咪胍的方法，浓度在３×１０＾－７－６×１０＾－５ｇ／ｍＬ，范围内与峰电流呈线性关系，ＲＳＤ为２．２％，回收率为９６％－１０２％。该方法操作简便快速，大多数金属离子和多种有机生化物质不干扰测定，方法用于片剂和加标尿样中甲氰咪胍的测定与药典方法对照，获得满意结果，并对电极反应进行了初步探讨。     

冠醚型电极对局部麻醉药响应功能的研究

用二苯并24-冠-8作为活性物质、邻苯二甲酸二(2-乙基)己酯为增塑剂制得PVC膜电极。电极对局麻药丁卡因、普鲁卡因和利多卡因具有能斯特响应,用于局麻药针剂的测定取得满意的结果。     

蒙脱石修饰碳糊电极测定氨基酸的研究：Ⅱ.酪氨酸的测定

本文报道蒙脱石修饰碳糊电极测定酪氨酸，在０．００１ｍｏｌ／Ｌ ＫＣｌ－ＨＣｌ（ｐＨ＝２．０）溶液中开路富集，介质交换后微分脉冲阳极溶出伏安法测定，在０．５－２．５μｇ／ｍｌ范围内有线性，检测限为６３ｎｇ／ｍｌ。可避免其他氨基酸，微量元素和常量金属元素的干扰，直接用于氨基酸药物样品的分析，获得了满意的结果，还对酪氨酸在电极上的反应机理进行了探讨。     

聚天青A膜修饰电极的电化学特性及其对亚硝酸根的电催化性能

在玻碳电极上以循环伏安法制备了聚天青A膜修饰电极(PAAE) ,天青A能够在玻碳电极上形成稳定的聚合膜 ;通过正交试验确定了电聚合天青A的最佳条件 ,研究了该修饰电极的电化学特性 ,并讨论了其对亚硝酸根的电催化还原作用 ;结果表明 ,亚硝酸根在PAAE上有很好的电流响应 ,催化峰电流与亚硝酸根浓度在1.0×10-5 ～4.0×10-3 mol/L之间呈良好的线性关系     

电化学超级电容器电极材料的研究进展

回顾了电化学超级电容器电极材料的研究进展，并对不同电极材料的储能原理和性能特点进行了简要的阐述。参考文献29篇。     

纳米金修饰玻碳电极在抗坏血酸共存下选择性测定去甲肾上腺素

利用电沉积的方法制得纳米金修饰玻碳电极 ,该修饰电极对去甲肾上腺素 (NE)氧化反应有催化作用。去甲肾上腺素在纳米金修饰玻碳电极上有很强的吸附作用。研究了磷酸缓冲溶液的pH值和浓度对NE的电化学行为的影响。从去甲肾上腺素和抗坏血酸在纳米金修饰电极的循环伏安图上可观察到两个明显分开的氧化峰 ,峰电位差达到 1 3 1mV ,因此 ,可利用该修饰电极在抗坏血酸存在下选择性测定去甲肾上腺素 ,线性范围为 1× 1 0 - 4 ～5× 1 0 - 6 mol L。