硫脲络合–火焰原子吸收光谱法测定低硅铝合金中的银含量

采用硫脲络合–火焰原子吸收光谱法测定低硅铝合金中的银元素含量。实验探讨了酸度及硫脲用量对银测定的影响及铝合金中基体元素与共存元素对银元素分析线的干扰情况。结果表明:选用9%的盐酸和3%的硝酸溶解试样最好,加入5 mL 50 g/L硫脲溶液可消除氯离子对试验结果的影响,基体铝元素和其它共存元素不干扰银的测定。根据低硅铝合金中银元素的含量范围,合成系列标准溶液,建立工作曲线,工作曲线的线性范围为0.05%~0.50%。银元素含量为0.30%的样品测定结果的相对标准偏差为0.15%(n=8),标准加入回收率为96.8%~98.5%。该方法操作简便、重现性好、测量结果准确可靠。     

Etude du Systeme Ternaire H2O-Al(NO3)3-Mg(NO3)2 I - Isothermes 15, 25, 30, 40 et 50°C

The solid-liquid equilibria of the ternary system H₂ O-Al(NO₃ )₃ -Mg(NO₃ )₂ were studied at 15, 25, 30, 40 and 50°C by using a synthetic method which allows to determine all the characteristic points of isothermal sections. In all isotherms the liquidus exhibit two curves corresponding to the saturation in Mg(NO₃ )₂ ⋅6H₂ O and Al(NO₃ )₃ ⋅9H₂ O. Neither double salts nor mixed crystals are observed in the temperature and composition field studied. This revised version was published online in July 2006 with corrections to the Cover Date.     

Adsorptive stripping voltammetry of some trace elements in biological samples,II: Nickel,arsenic, aluminium and selenium

A study of the adsorptive stripping voltammetry of nickel, aluminium, selenium and arsenic is reported in which 2,5-dimercapto-1,3,4-thiadiazole (DMTD) has been used as a chelating agent. By a suitable choice of deposition potential, deposition time, reagent reaction time and other operating conditions, the determination of the four elements could be achieved.By the use of benzyltrimethyl ammonium methoxide as a digesting solvent, it was possible to apply the procedure to the direct determination of the four elements in biological samples.     

Growth and raman scattering of aluminium gallium orthophosphate piezoelectric crystals

A new series of non-ferroelectric crystals, the piezoelectric solid solution aluminium gallium orthophosphate Al_1-xGa_xPO₄ (AGP, 0 < x < 1) system has been successfully developed by a hydrothermal method. The AGP crystal with X = 0.10 shows a phase transition temperature T_−β = 587 ± 3 °C with a cell parameters A = b = 0.49386(3) and C = 1.09563(2) nm. Raman spectra including directional dispersion in AGP are similar to those from -AIPO4 and -quartz crystals, indicating all of them belong to an isomorphic family, the short-range interaction being dominant in AGP. Comparison with -AIPO4 crystals, there exists an apparent red shift of the mode frequency and a smaller TO/LO mode splitting of the E species in the AGP crystals.     

邻硝基苯基荧光酮-Tween 80双波长分光光度法测定微量铝

本文研究了在非离子表面活性剂Tween 80存在下Al(Ⅲ)与O-NPF显色反应的条件,在pH9.0～11.0的HBO_3-Na_2CO_3缓冲溶液中可形成稳定的紫色络合物,最大吸收波长为564nm,铝量在0～5μg/25ml范围符合比尔定律,采用双波长法摩尔吸光系数高达1.81×10~5。本法具有简便、快速、灵敏度高、准确性好等优点。     

Evolution of near‐surface deformed layers during hot rolling of AA3104 aluminium alloy

In the present study, controlled reheating and breakdown rolling experiments have been carried out and the thickness, structure and uniformity of the resultant near‐surface deformed layer have been characterised by scanning and transmission electron microscopy. High aspect ratio rolling, coupled with an increased rolling speed and rough and worn roll surfaces results in a high degree of interaction between the work roll and work pieces. This generates a shingled surface appearance with a high population of transverse surface cracks and a relatively thick near‐surface deformed layer. In contrast, relatively low aspect ratio rolling, coupled with a reduced rolling speed and freshly ground work roll surfaces generates a relatively thin near‐surface deformed layer. The thickness of the near‐surface deformed layer varies across the alloy surface and is directly related to the shingles, the surface cracks and the distribution of coarse intermetallics. Copyright © 2009 John Wiley & Sons, Ltd.     

Corrosion behaviour of mechanically polished AA7075‐T6 aluminium alloy

In the present study, the effects of mechanical polishing on the microstructure and corrosion behaviour of AA7075 aluminium alloy are investigated. It was found that a nano‐grained, near‐surface deformed layer, up to 400 nm thickness, is developed due to significant surface shear stress during mechanically polishing. Within the near‐surface deformed layer, the alloying elements have been redistributed and the microstructure of the alloy is modified; in particular, the normal MgZn₂ particles for T6 are absent. However, segregation bands, approximately 10‐nm thick, containing mainly zinc, are found at the grain boundaries within the near‐surface deformed layer. The presence of such segregation bands promoted localised corrosion along the grain boundaries within the near‐surface deformed layer due to microgalvanic action. During anodic polarisation of mechanically polished alloy in sodium chloride solution, two breakdown potentials were observed at ?750 mV and ?700 mV, respectively. The first breakdown potential is associated with an increased electrochemical activity of the near‐surface deformed layer, and the second breakdown potential is associated with typical pitting of the bulk alloy. Copyright © 2009 John Wiley & Sons, Ltd.     

Electrograining of aluminium in HCl: effect of the alloy for high‐speed processing lines

Electrograining of aluminium in hydrochloric acid is one of the most commonly used processes for manufacturing printing lithographic plates. Two of the main features to be taken into account are the final morphology of the electrograined surface and the susceptibility of the alloy to be processed or, more specifically, the speed of the processing line. Both issues determine the efficiency of the production in terms of quality and time. In this work, a widely used commercial aluminium alloy (1050) is compared with a new experimental one (1050 modified with Zn) and with a higher strength alloy (namely 1020). In order to analyse their response to a.c. graining in HCl for high‐speed lines, some techniques such as image analysis or interferometry have been used. In general, the alloys doped with Zn and Mg present a better response to litho processing in terms of graining activity and reduction of streakiness when treatment of lower time periods is applied due to their influence as pitting initiators. Copyright © 2010 John Wiley & Sons, Ltd.     

无溶剂一锅法Al(ClO_4)_3催化合成α-氨基膦酸酯

以无水高氯酸铝为催化剂,将芳香醛、芳香胺及亚磷酸酯在无溶剂条件下一锅法反应,高效地合成了α-氨基膦酸酯,该催化剂优于其它已发现的催化剂[如Mg(ClO4)2,BiCl3,AlCl3等],建立了一种适用于含有钝化基团的芳香胺的α-氨基膦酸酯的新合成方法.