Photoinduced phase transition accompanied with the changes in magnetic properties

Recently, many studies have been started in search for materials which show a photoinduced phase transition (PIPT). In this work, we review two systems as typical examples of PIPT accompanied with changes in magnetic characteristics; (1) organo-metal complex [Fe(2-pic)₃]Cl₂ EtOH (2-pic = 2-amino-methyl-pyridine) and (2) III-V based magnetic semiconductors (In_1-x , Mn _x )As. In the former case, we show several nonlinear characteristics in dynamical process of photoinduced spin state transition from low-spin to high-spin states. In the latter one, photocarrier-induced ferromagnetic order has been observed by both magnetic and transport measurements.     

The effects of Zn vacancies on ferromagnetism in Cu-doped ZnO films controlled by oxygen pressure and Li doping

Zn0.99Cu0.01O films were studied experimentally and theoretically.The films were prepared by pulsed-laser deposi tion on Pt(111)/Ti/SiO2/Si substrates under various oxygen pressures to investigate the growth-dependence of the ferromag netic properties.The structural,magnetic,and optical properties were studied,and it was found that all the samples possess a typical wurtzite structure,and that the films exhibit room-temperature ferromagnetism.The sample deposited at 600℃and an oxygen pressure of 10 Pa showed a large saturation magnetization of 0.83μB/Cu.The enhanced ferromagnetism in the(Cu,Li)-codoped ZnO is attributable to the existence of Zn vacancies(VZn),as shown by first-principles calcu lations.The photoluminescence analysis demonstrated the existence of V Zn in both Zn0.99Cu0.01O and(Cu,Li)-codoped ZnO thin films,and this plays an important role in the increase of ferromagnetism,according to the results of first-principles calculations.     

Monodisperse Six-Armed Starbursts based on Truxene-Cored Multibranched Oligofluorenes: Design,Synthesis, and Stabilized Lasing Characteristics

A series of monodisperse six-armed conjugated starbursts ( Tr1F , Tr2F , and Tr3F ) containing a truxene core and multibranched oligofluorene bridges capped with diphenylamine (DPA) units has been designed, synthesized, and investigated as robust gain media for organic semiconductor lasers (OSLs). The influence of electron-rich DPA end groups on their optoelectronic characteristics has been discussed at length. DPA cappers effectively raise HOMO levels of the starbursts, thus enhancing the hole injection and transport ability. Solution-processed electroluminescence devices based on the resulting six-armed starbursts exhibited efficient deep-blue electroluminescence with clear reduced turn-on voltages (3.2–3.5 V). Moreover, the resulting six-armed molecules showed stabilized electroluminescence and amplified spontaneous emission with low thresholds (27.4–63.9 nJ pulse⁻¹), high net gain coefficients (80.1–101.3 cm⁻¹), and small optical loss (2.6–4.4 cm⁻¹). Distributed feedback OSLs made from Tr3F exhibited a low lasing threshold of 0.31 kW cm⁻² (at 465 nm). The results suggest that the construction of truxene-centered six-armed conjugated starbursts with the incorporation of DPA units can effectively enhance EL properties by precisely regulating the HOMO energy levels, and further optimizing their optical gain properties.     

雾化辅助化学气相沉积法氧化镓薄膜生长研究

采用自主设计搭建的雾化辅助化学气相沉积系统设备,开展了Ga₂O₃薄膜制备及其特性研究工作。通过X射线衍射研究了沉积温度、系统沉积压差对Ga₂O₃薄膜结晶质量的影响。结果表明,Ga₂O₃在425~650 ℃温度区间存在物相转换关系。随着沉积温度从425 ℃升高至650 ℃,薄膜结晶分别由非晶态、纯α-Ga₂O₃结晶状态向α-Ga₂O₃、β-Ga₂O₃两相混合结晶状态改变。通过原子力显微镜表征探究了生长温度对Ga₂O₃薄膜表面形貌的影响,从475 ℃升高至650 ℃时,薄膜表面粗糙度由26.8 nm下降至24.8 nm。同时,高分辨X射线衍射仪测试表明475 ℃、5 Pa压差条件下的α-Ga₂O₃薄膜样品半峰全宽仅为190.8″,为高度结晶态的单晶α-Ga₂O₃薄膜材料。     

管式炉中半导体激光器巴条Au80Sn20焊料封装研究

为了提高半导体激光器的封装质量和效率,引入管式炉利用夹具进行批量封装。由于封装质量的好坏直接影响半导体激光器的输出特性和使用寿命,利用MOCVD生长808 nm芯片,重点分析了管式炉温度和封装时间对半导体激光器巴条双面金锡封装质量的影响。利用X射线检测、结电压、光电特性参数和smile效应测试手段,确定了管式炉封装半导体激光器巴条的最优封装条件,为以后的产业化提供了指导意义。     

Plasmonic nanostructures for local field enhancement in the UV region

In this work we describe an ultraviolet subwavelength focusing in plasmonic nanostructures. A system which provides a 20–25 times local field enhancement at a wavelength of 350 nm is proposed. This system represents a metalized V-shaped groove in a surface of a dielectric medium. Subwavelength focusing is achieved by a plasmon wave propagation along the surface of metal film and by the transfer of electromagnetic field through the dielectric medium. The influence of system parameters on a local field enhancement is investigated. A simplified model that allows for determining the geometric parameters of an optimized resonator is proposed.     

Ru掺杂SnO2半导体固溶体的电子结构研究

运用基于密度泛函理论的第一性原理方法,建立了SnO₂以及不同比例Ru掺杂的SnO₂超胞模型,在对其进行几何优化后计算了Sn_1-xRu_xO₂(x=0,1/16,1/12,1/8,1/6,1/4,1/2)半导体的电子结构,并讨论了其晶格参数、电荷密度、能带结构和态密度(包括分态密度)等性质。结果表明,掺杂后,晶格参数随掺杂量的增加线性减小,与实验值的偏差在4%以内;掺杂后,在费米能级处可以提供更多的填充电子,使得电子跃迁至导带更容易,固溶体的导电性增强。为Sn_1-xRu_xO₂固溶体电极材料的发展和应用提供了理论基础。     

Ionic hexagonal columnar metallomesogens derived from tetrabenzo[b,f,j,n] [1,5,9,13]tetraazacyclohexadecine

A series of transition metal (Ni, Cu, Pd) complexes derived from macrocyclic tetrabenzo[b,f,j,n] [1,5,9,13]tetraazacyclohexadecine (TAAB) was synthesized and their mesomorphic properties studied by differential scanning calorimetry, polarized optical microscopy and X-ray powder diffraction (XRD). These compounds have eight alkoxy side chains attached around the central molecular core and form disc-like molecules. All the derivatives exhibited columnar mesophases over a wide range of temperature. The mesomorphic behaviour was found to be dependent on the incorporated metal and the carbon length of the alkoxy side chains. The clearing temperatures decreased in the order M = Ni > Pd > Cu; this decrease was probably due to the size of the metal ions. Some derivatives with shorter side chains (n = 10, 12) were room temperature liquid crystals. All compounds were found to exhibit hexagonal columnar (Col_h) phases which were confirmed by powder XRD.     

氧化亚铜微/纳米结构的形貌可控制备及光催化和防污性能

利用简便易行的液相法,采用葡萄糖为还原剂,通过调整加料方式、反应温度、NaOH用量等条件,实现具有{110}截面八面体、八面体和短足形等形貌的Cu₂O微/纳米结构的可控制备,运用透射电子显微镜、扫描电子显微镜、紫外可见分光光度计等对产物进行组成、结构、形貌和光响应的表征,对Cu₂O的形貌结构和生长机理进行研究。对比和优化了具有不同形貌的Cu₂O微/纳米结构对甲基橙染料的光催化性能。将不同形貌的微/纳米Cu₂O作为防污剂复配的自抛光防污涂料,涂层磨蚀率、接触角与实海挂板实验证明该涂料具有良好的防污性能。     

Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors

Titanium dioxide (TiO₂) thin films were deposited onto p‐Si substrates held at room temperature by reactive Direct Current (DC) magnetron sputtering at various sputter powers in the range 80–200 W. The as‐deposited TiO₂ films were annealed at a temperature of 1023 K. The post‐annealed films were characterized for crystallographic structure, chemical binding configuration, surface morphology and optical absorption. The electrical and dielectric properties of Al/TiO₂/p‐Si structure were determined from the capacitance–voltage and current–voltage characteristics. X‐ray diffraction studies confirmed that the as‐deposited films were amorphous in nature. After post‐annealing at 1023 K, the films formed at lower powers exhibited anatase phase, where as those deposited at sputter powers > 160 W showed the mixed anatase and rutile phases of TiO₂. The surface morphology of the films varied significantly with the increase of sputter power. The electrical and dielectric properties on the air‐annealed Al/TiO₂/p‐Si structures were studied. The effect of sputter power on the electrical and dielectric characteristics of the structure of Al/TiO₂/p‐Si (metal‐insulator‐semiconductor) was systematically investigated. Copyright © 2014 John Wiley & Sons, Ltd.