| 雾化辅助化学气相沉积法氧化镓薄膜生长研究 |
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| 引用本文： | 罗月婷,肖黎,陈远豪,梁昌兴,龚恒翔.雾化辅助化学气相沉积法氧化镓薄膜生长研究[J].人工晶体学报,2022,51(7):1163-1168. |
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| 作者姓名： | 罗月婷 肖黎 陈远豪 梁昌兴 龚恒翔 |
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| 作者单位： | 1.重庆理工大学理学院,重庆 400054; 2.重庆理工大学,绿色能源材料技术与系统重庆市重点实验室,重庆 400054 |
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| 基金项目： | 重庆市自然科学基金博士后科学基金(cstc2021jcyj-bshX0219);重庆理工大学本科教育教学改革研究项目(2021YB46) |
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| 摘 要： | 采用自主设计搭建的雾化辅助化学气相沉积系统设备,开展了Ga2O3薄膜制备及其特性研究工作。通过X射线衍射研究了沉积温度、系统沉积压差对Ga2O3薄膜结晶质量的影响。结果表明,Ga2O3在425~650 ℃温度区间存在物相转换关系。随着沉积温度从425 ℃升高至650 ℃,薄膜结晶分别由非晶态、纯α-Ga2O3结晶状态向α-Ga2O3、β-Ga2O3两相混合结晶状态改变。通过原子力显微镜表征探究了生长温度对Ga2O3薄膜表面形貌的影响,从475 ℃升高至650 ℃时,薄膜表面粗糙度由26.8 nm下降至24.8 nm。同时,高分辨X射线衍射仪测试表明475 ℃、5 Pa压差条件下的α-Ga2O3薄膜样品半峰全宽仅为190.8″,为高度结晶态的单晶α-Ga2O3薄膜材料。
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| 关 键 词： | Ga2O3 薄膜 雾化辅助化学气相沉积 沉积温度 压差 单晶 半导体 |
| 收稿时间： | 2022-04-10 |
Gallium Oxide Thin Film Prepared by Atomization-Assisted Chemical Vapor Deposition |
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| LUO Yueting,XIAO Li,CHEN Yuanhao,LIANG Changxing,GONG Hengxiang.Gallium Oxide Thin Film Prepared by Atomization-Assisted Chemical Vapor Deposition[J].Journal of Synthetic Crystals,2022,51(7):1163-1168. |
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| Authors: | LUO Yueting XIAO Li CHEN Yuanhao LIANG Changxing GONG Hengxiang |
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| Affiliation: | 1. College of Science, Chongqing University of Technology, Chongqing 400054, China; 2. Chongqing Key Laboratory of Green Energy Materials Technology and System, Chongqing University of Technology, Chongqing 400054, China |
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| Abstract: | Based on the self-assembled equipment, the properties of Ga2O3 films prepared by atomization-assisted chemical vapor deposition (AA-CVD) method were studied. The effects of temperature and pressure difference on the crystal qualities of Ga2O3 thin films were studied by X-ray diffraction. The results show that there is a phase structure conversion process of Ga2O3, upon the temperature improving from 425 ℃ to 650 ℃, the crystalline structure of the thin films transform from amorphous structure, pure α-Ga2O3 crystal structure to α-Ga2O3, β-Ga2O3 two-phase mixed crystal structure. The effects of temperature on the thin films’ surface morphology were characterized by atomic force microscope. When the temperature increases from 475 ℃ to 650 ℃, the root-mean-square roughness of the thin films surface decrease from 26.8 nm to 24.8 nm. At the same time, the single crystal property of the α-Ga2O3 thin film was measured by high resolution X-ray diffraction. The result shows that the thin film sample having a full width at half maximum of only 190.8″ which prepared at the temperature of 475 ℃ and at the pressure difference of 5 Pa, it can prove that the α-Ga2O3 film is a highly crystallized single-crystal materia. |
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| Keywords: | Ga2O3 thin film atomization-assisted chemical vapor deposition deposition temperature differential pressure single crystal semiconductor |
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