Effects of Sb doping on the structure and properties of SnO2 films

Transparent heat-insulating SnO₂ films were prepared on the glass substrate with sol-gel. The effects of Sb doping on the structure and photoelectric properties of the films were investigated. The films were characterized by scanning electron microscope (SEM), X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), Ultraviolet–Visible-Near Infrared Spectrometer (UV-VIS-NIR) and Hall Effect tester. The results show that the doping of Sb did not change the basic crystal structure of the SnO₂ film, but reduced the crystallinity of the film. With the increase of Sb doping, the grain size decreases first and then maintains basically invariable. The sheet resistance of the film decreases first and then increases. The transmittance of the substrate glass coated with this film (hereinafter referred to as the film's transmittance) in the near-infrared region (780–2500 nm) decreases from 92.55% to 60.48%, and increases a little when the doping amount exceeded 11 mol%. And its transmittance of visible light (380–780 nm) fluctuated slightly between about 81% and 86%.     

Edge-enriched graphene with boron and nitrogen co-doping for enhanced oxygen reduction reaction

Carbon-based electrocatalysts for oxygen reduction reaction (ORR), especially in anion exchange membrane fuel cells (AEMFCs), have received a lot of attention because they exhibit excellent stability and are comparable to commercial Pt/C catalysts. Currently, to maximize the catalytic activity of carbon-based electrocatalysts, there are two major strategies: heteroatom doping or exposing active edge sites. However, the approach of increasing heteroatomic dopants of active edge sites has been rarely addressed. In this study, we present a simple strategy to prepare edge-enriched graphene catalysts with an increased ratio of heteroatomic dopants suitable for ORR of AEMFCs. The catalysts were prepared under harsh oxidation conditions, followed by a simple co-doping process with boron and nitrogen. The ORR activity of the catalysts was observed to be related to an increase of edge sites with heteroatomic dopants. We believe that the edge-enriched structure leads to accelerated electron transfer with enhanced oxygen adsorption.     

均苯三甲酸铕及铕镧配合物的合成及荧光性质

以均苯三甲酸为配体,水热条件下合成了均苯三甲酸铕及铕镧系列发光配合物La_xEu_1-x(BTC)·nH₂O(x=0,0.1,0.3,0.5,0.7,0.9),通过元素分析及化学滴定法测定了配合物的组成。用红外光谱对其进行了表征,确定了该系列配合物的组成为La_xEu_1-x(BTC)·nH₂O。研究了系列配合物的荧光性质,荧光光谱表明:该类配合物均能发出强的铕离子的特征荧光,并且镧元素的掺入能增强铕配合物的发光强度,但发射峰的位置基本上没有变化;其中⁵D₀→⁷F₁和⁵D₀→⁷F₂的跃迁发射较强,且均劈裂为两个峰(587,593nm)和(611,618nm),这是由于铕离子所处的配位环境引起的。     

连续激光诱导Zn/InP掺杂过程中温度分布的解析计算

在实验的基础上，分析表面蒸发Zn的InP样品在连续激光诱导下掺杂Zn过程.在一维热传导问题的第三类边界条件下，给出激光辐照有限厚双层材料Zn/InP温度分布的一种直观简洁的解析形式. 关键词： 激光诱导掺杂 Zn/InP 温度分布     

Compositionally modulated Fermi surfaces, structured diffuse scattering and ternary derivatives of 1T-TaS2

Ternary derivatives of 1T-TaS₂ have been synthesized and the variation in the highly structured diffuse intensity distributions characteristic of such materials carefully monitored to investigate the effect that such substitution has upon the band structures and Fermi surfaces (FSs) of the materials. Removal of d electrons via the replacement of Ta ions with lower valent transition metal ions leads to a systematic increase in the radii of the characteristic structured diffuse intensity distribution. Extended Hückel tight binding calculations of the FSs of the doped samples are carried out and used to predict possible nesting wave-vectors. The results are in reasonably good agreement with the radii of the experimentally observed diffuse intensity distributions.     

Quantitative Depth Profiling of K-Doped Fullerene Films Using XPS and SIMS

 Phenomena accompanying electrochemical doping of solid fullerene films with potassium were studied by sputter ion depth profiling (XPS and SIMS). The potassium distribution was determined, and artifacts associated with possible damage of the layer composition caused by ion impact were investigated and discussed. To compare the charge transfer while reductive doping is taking place at fullerene/solution interface with doping from gas phase, model layers were prepared and doped by potassium under UHV conditions. It was found that sputtering by Ar⁺ primary ions yields both accurate information on the alkaline metal distribution and on its concentration. Sputtering by O⁺ ions led to an enrichment of potassium, apparently due to the reactivity of oxygen with the fullerene matrix. It is shown that the reductive doping starts at the fullerene/solution interface. The concentration of potassium in the doped films was found to be lower than expected from the charge transferred during the electrochemical reduction. Other phase transformations such as hydrogenation are discussed. Received March 4, 2002; accepted July 26, 2002     

Wide-range regulation of polyaniline conduction by interphase doping of a polyaniline film

The not-sufficient-enough conductance of semioxidized protonated polyaniline (PANI) is usually attributed to the presence of ordered quasi-metallic domains surrounded by a poorly conducting amorphous phase. The paper presents experimental results testifying to the existence, in semioxidized PANI, of multilevel redox heterogeneity that crucially effects the conductance magnitude in view of specific topology at which higher-oxidized (conducting) domains are surrounded by less oxidized (poorly conducting) domains and because the PANI conduction is extremely sensitive to the oxidation degree. It is shown experimentally that the interphase doping with metals and degenerate semiconductors of a semioxidized salt of PANI and poly(2-acrylamide-2-methyl-1-propanesulfonic acid) (PAMPSA) with a 1: 2 ratio between PANI and PAMPSA raises the PANI-PAMPSA conductivity by 3–8 orders of magnitude due to the formation near the interface of thin layers whose conductance depends on the work function of the material in contact with PANI-PAMPSA and in extreme cases substantially exceeds the conductance of gold and copper at room temperature.     

Study of the pulsed laser vapor doping of Si(1 0 0) with KrF excimer laser and BCl3 gas

The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl₃ gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl₃ were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface.     

Interdiffusion of hydroxyl groups and of doping additions between a bearing pipe and a deposited layer in billets of fiber light guides

Using Raman spectroscopy, a quantitative analysis of the distribution of OH⁻ ions on the boundary between a bearing pipe and a glass layer deposited from chlorides in billets for quartz fiber light guides is carried out. Water penetrated into the light-reflecting shell to a depth of several tenths of a millimeter, depending on the composition of the doping layer (i.e., ultimately on the temperature of the depsoition process). A. F. Ioffe Physical-Technical Institute, Academy of Sciences of Russia, 26, Politekhnicheskaya St., St. Petersburg, 194021, Russia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 4, pp. 548–550, July–August, 1997.     

有机薄膜器件负电阻特性的影响因素

研究了影响有机染料掺杂聚合物薄膜器件负电阻特性的因素，为探索有机负电阻的机理提供实验依据。实验中制备了多种有机染料掺杂聚合物薄膜器件，研究了有机小分子染料、聚合物基体、薄膜组成及厚度、ITO和聚苯胺阳极等对有机染料掺杂聚合物薄膜器件负电阻特性的影响。在室温、大气环境下，所制备的多种有机染料掺杂聚合物器件在所加电压为3～4V时，观察到明显的负电阻特性，电流峰谷比最大约为8。负电阻现象及峰谷比的大小受膜厚和器件的结构、制备工艺等影响。提出用负电阻和二极管并联组成的等效电路模型解释影响负电阻特性的因素，认为负电阻特性与载流子的不平衡注入有关。在此基础上设计、合成了主链含唔二唑电子传输基团的可溶性聚对苯撑乙烯衍生物，该聚合物兼具空穴和电子传输功能，在空气中具有较稳定的N型负电阻特性。进一步控制相关材料和工艺条件，有可能得到易于控制的负阻效应，开发出新型的有机负电阻器件。