Synthesis and Characterization of Iron Nanowires

The iron nanowires can be fabricated via the process in which sodium borohydride reduces iron salts in external magnetic field. The iron nanowires are found to be covered by passivated layers of iron oxide which prevent the oxidation of iron nanowires. In this process, the boron will include in iron nanowires. The average length and diameter of iron nanowires is around 1.2 micrometers and 60 nanometers, respectively. According to ICP results, the contents of B and Fe are about 1.98 wt% and 87.04 wt%, respectively, in iron nanowires. A wide variety of equipment is used to investigate the morphological, microchemical, and structural characteristics of the newly synthesized iron nanowires ––– e.g., XRD, FE‐SEM, HR‐TEM, VSM and XANES. XANES analysis indicates the boron in iron nanowires exists in the form of B₂O₃. The saturation magnetization and the coercive force of iron nanowires are 157.93 emu/g and 9.74 Oe, respectively. In‐situ images of synthesized iron nanowires during reduction process in magnetic field are observed by NSRRC transmission X‐ray microscope. Thus, this study develop a novel process to produce iron nanowires with large quantitates and can control its length and diameter by various the concentration of precursors for various applications.     

ZnO纳米线基MWNTs/PVDF复合热电材料的制备及特性研究

将不同比例的多壁碳管(MWNTs)与聚偏二氟乙烯(PVDF)聚合物混合后,喷涂于n型ZnO半导体纳米线阵列上,制备了一种新型ZnO纳米线基MWNTs/PVDF热电复合材料.与以往采用价格昂贵的p型与n型单壁碳纳米管(SWNTs)与聚合物混合制备的复合热电材料特性相比,这种新型热电复合材料在降低制造成本的同时,利用分散于聚合物中MWNTs的一维电子传输特性及形成的大量界面势垒,加上ZnO半导体纳米线具有的较高载流子密度与迁移率,提高了复合热电材料中电子的输运特性,增加了材料对声子的散射强度.测试发现,在一定的温度梯度下,随着MWNTs添加质量百分比的增加,热电材料的温差电动势和电导率也随之增加,但其Seebeck系数变化量不大.研究表明,这种热电材料有望替代采用p型与n型SWNTs构建的SWNTs/PVDF复合热电材料.研究结果对开发超轻、无毒、廉价、可应用于各种微纳电子领域的新型电源具有重要的参考价值.     

A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN-based high-frequency power electronics

Metal–organic chemical vapor deposition (MOCVD) is one of the best growth methods for GaN-based materials as well-known. GaN-based materials with very quality are grown the MOCVD, so we used this growth technique to grow InAlN/GaN and AlN/GaN heterostructures in this study. The structural and surface properties of ultrathin barrier AlN/GaN and InAlN/GaN heterostructures are studied by X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements. Screw, edge, and total dislocation densities for the grown samples have been calculated by using XRD results. The lowest dislocation density is found to be 1.69 × 10⁸ cm⁻² for Sample B with a lattice-matched In_0.17Al_0.83N barrier. The crystal quality of the studied samples is determined using (002) symmetric and (102) asymmetric diffractions of the GaN material. In terms of the surface roughness, although reference sample has a lower value as 0.27 nm of root mean square values (RMS), Sample A with 4-nm AlN barrier layer exhibits the highest rough surface as 1.52 nm of RMS. The structural quality of the studied samples is significantly affected by the barrier layer thickness. The obtained structural properties of the samples are very important for potential applications like high-electron mobility transistors (HEMTs).     

Facile hydrothermal synthesis of zinc sulfide nanowires for high-performance asymmetric supercapacitor

A facile, single-step hydrothermal route is followed to prepare ZnS nanowires with large aspect ratios. The obtained ZnS nanowires deposited on nickel foam (ZnS/Ni-foam) exhibit a specific capacitance of 781 F/g at a current density of 0.5 A/g. An asymmetric supercapacitor fabricated from ZnS/Ni-foam as a positive electrode and jute derived activated carbon coated on Ni-foam (JAC/Ni-foam) as a negative electrode attains a high specific capacitance of 573 F/g at a current density of 0.5 A/g, with an accompanying high energy density of 51 Wh/kg at a power density of 200 W/kg in an extensive operating potential window of 1.2 V. In addition, the ZnS//JAC asymmetric supercapacitor reveals long-term cyclic stability, after 10,000 GCD cycles the device sustain around ～87 % of the initial specific capacitance. These results shed enlighten a new opportunity for promising electrode materials in supercapacitors.     

Oriented Nickel Nanonetworks and Their Submicron Fibres as a Basis for a Transparent Electrically Conductive Coating

The paper demonstrates a technique for applying an oriented nickel network to a glass surface. The method is based on the chemical reduction of nickel salt. The shaping and orientation of the resulting system are carried out using a micellar template of a surfactant and a magnetic field. Submicron nickel fibres are used to impart unity to the plurality of individual-oriented nickel nanonetworks. The result is a single conductive coating on the surface of the glass, which has a transparency in the optical range. Investigations of the structure, chemical composition, morphology and electrical conductivity of the coating were performed.     

The Quenching and Sonication Effect on the Mechanical Strength of Silver Nanowires Synthesized Using the Polyol Method

This study aims to determine the effect of fast cooling (quenching) on thermal properties, mechanical strength, morphology and size of the AgNWs. The synthesis of AgNWs was carried out at three different quenching-medium temperatures as follows: at 27 °C (ambient temperature), 0 °C (on ice), and −80 °C (in dry ice) using the polyol method at 130 °C. Furthermore, the AgNWs were sonified for 45 min to determine their mechanical strength. Scanning electron microscopy analysis showed that the quenched AgNWs had decreased significantly; at 27 °C, the AgNWs experienced a change in length from (40 ± 10) to (21 ± 6) µm, at 0 °C from (37 ± 8) to (24 ± 8) µm, and at −80 °C from (34 ± 9) to (29 ± 1) µm. The opposite occurred for their diameter with an increased quenching temperature: at 27 °C from (200 ± 10) to (210 ± 10) nm, at 0 °C from (224 ± 4) to (239 ± 8) nm, and at −80 °C from (253 ± 6) to (270 ± 10) nm. The lower the temperature of the quenching medium, the shorter the length and the higher the mechanical strength of AgNWs. The UV-Vis spectra of the AgNWs showed peak absorbances at 350 and 411 to 425 nm. Thermogravimetric analysis showed that AgNWs quenched at −80 °C have better thermal stability as their mass loss was only 2.88%, while at the quenching temperatures of 27 °C and 0 °C the mass loss was of 8.73% and 4.17%, respectively. The resulting AgNWs will then be applied to manufacture transparent conductive electrodes (TCEs) for optoelectronic applications.     

PEMFC阴极催化层结构分析

采用CCS法（catalyst coated substrate）构建铂纳米颗粒（Pt-NPs）和铂纳米线（Pt-NWs）双层催化层结构,分析其对单电池电化学性能的影响。对于富铂/贫铂双层铂纳米颗粒结构,靠近质子交换膜侧的富铂层中致密的铂颗粒结构能促进ORR速率,而靠近气体扩散层一侧的具有更高的孔隙率和平均孔尺寸的贫铂层,有利于反应气体的传输和扩散,当贫富铂层铂载量比为1:2时,单电池测试表现出最优性能,在0.6 V时的电流密度达到了1.05 A·cm^-2,峰值功率密度为0.69 W·cm^-2,较常规单层催化层结构提升了21%。在以Pt-NPs作为基底层时生长Pt-NWs时,得到了梯度分布的双层结构。铂颗粒的存在促进了铂前驱体的还原,并为新形成的铂原子提供了沉积位置。在Pt-NPs基底上生长的Pt-NWs具有更均匀的分布以及更致密的绒毛结构,并且自然形成了一种梯度分布。优化后的Pt-NWs催化层在0.6 V时的电流密度提高了21%。含有双层催化层结构的膜电极具有更高的催化剂利用率,对阴极催化层结构的优化和制备提供了新思路。     

Gold Nanowires – Assisted Prussian Blue Enhancing Peroxidase – Like Activity for the Non-enzymatic Electrochemically Sensing H2O2 Released From Living Cells

Prussian blue nanoparticles (PBNPs) have peroxidase-like activity for H₂O₂. However, PB alone have poor electrochemical performances. Herein, a strategy was proposed by direct in-situ growth PBNPs onto gold nanowires (AuNWs) surface to obtain the peroxidase-like activity with about 4.05 times higher than that of PBNPs alone. PBNPs@AuNWs was employed to construct a non - enzymatic electrochemical H₂O₂ sensor with the detection limit of 5.3×10⁻⁹ mol/L (S/N=3). The sensor was successfully used to detect H₂O₂ in human serum samples or secreted from living HeLa cells. It may be a competitive candidate for H₂O₂ assaying in biological samples or cellular investigation.     

紫外光辐照对TiO2纳米线电输运性能的影响及磁阻效应研究

采用溶胶凝胶法以及静电纺丝法, 利用热处理工艺, 成功制备出了多晶锐钛矿型TiO₂纳米线, 通过两线法在室温下测试单根TiO₂纳米线的V-I曲线来研究其电输运性能及磁阻效应. 结果表明: 在无光照环境下其V-I曲线为不过零点的直线, 零场电阻较大, 在磁场作用下电阻下降, 表现出负磁阻效应; 紫外光辐照环境下TiO₂纳米线载流子浓度增加使得电阻变小, 然而在磁场作用下电阻增大, 表现为正磁阻效应. 紫外光辐照导致的载流子浓度变化, 使得负磁阻转变为正磁阻, 我们将磁阻变化归结为d电子局域导致的负磁阻与能带劈裂导致的正磁阻两种机理相互竞争的结果.     

First‐principles identification of defect levels in Er‐doped GaN

Erbium (Er) doped GaN has been studied extensively for optoelectronic applications, yet its defect physics is still not well understood. In this work, we report a first‐principles hybrid density functional study of the structure, energetics, and thermodynamic transition levels of Er‐related defect complexes in GaN. We discover for the first time that Er_Ga–C_N–V_N, a defect complex of Er, a C impurity, and an N vacancy, and Er_Ga–O_N–V_N, a complex of Er, an O impurity, and an N vacancy, form defect levels at 0.18 eV and 0.46 eV below the conduction band, respectively. Together with Er_Ga–V_N, a complex of Er and an N vacancy which has recently been found to produce a donor level at 0.61 eV, these defect complexes provide explanation for the Er‐related defect levels observed in experiments. The role of these defects in optical excitation of the luminescent Er center is also discussed.