Impact of 100 MeV Au on the surface of relaxed Si0.5Ge0.5 alloy films studied by atomic force microscopy

We demonstrate a gradual surface modification process of relaxed Si_0.5Ge_0.5 alloy films by 100 MeV Au beam with fluence varying between 5 × 10¹⁰ and 1 × 10¹² ions/cm² at 80 K by means of atomic force microscopy (AFM). Presence of Ge quantum dots (QDs) was found in the virgin sample. The disappearance of the QDs were noticed when the samples were irradiated with a fluence of 5 × 10¹⁰ ions/cm². Craters were found developing at a fluence of 1 × 10¹¹ ions/cm². Apart from the evolution of the craters, blisters were also detected at a fluence of 1 × 10¹² ions/cm². Variation of the average root mean square value of the surface roughness as a function of fluence was examined.     

Surface reconstructions of InGaAs alloys

The surface reconstructions of In_xGa_1−xAs alloys grown by molecular beam epitaxy on the (0 0 1) surfaces of GaAs and InAs have been studied by reflection high-energy electron diffraction and scanning tunnelling microscopy. A surface phase diagram is presented for the nominally strain-free alloy as a function of substrate temperature and alloy composition, and structural models for the commonly observed 3× reconstructions are discussed. Two new, electronically stable structural models are described that account for the transition of the In_xGa_1−xAs surface alloy from a c(4 × 4) to an asymmetric 3× reconstruction and that are fully consistent with all current experimental evidence.     

The origin of the formation of cavities in galvanized coatings

The role of water‐soluble corrosion products on galvanized wires was examined. The samples used were industrial hot‐dip galvanized wires, which were exposed to the open air under all weather conditions for a relatively short time (6 and 12 months), in an urban environment close to the sea. The samples were studied by different methods, i.e. scanning electron microscopy (SEM), transmission electron microscopy (TEM), X‐ray diffraction (XRD) and optical microscopy (OM). Several phases were detected because of the galvanization procedure and the steel substrate. Furthermore, phases which were formed as a result of the reaction of zinc with the atmosphere were also detected. These were oxides like ZnO, carbonates like ZnCO₃ and hydrated Zn and Fe sulfates. Their presence influences the corrosion resistance of the wires, which finally, strongly depends on the solubility of the wires in water. The SO₄^2? compounds especially are very soluble and consequently are easily removed from the coating surface, leading to its degradation by the formation of cavities. In any case, their presence, even after a short period of exposure, implies that the coating is highly affected by the atmosphere of the modern city. Copyright © 2006 John Wiley & Sons, Ltd.     

The epitaxial sexiphenyl (0 0 1) monolayer on TiO2(1 1 0): A grazing incidence X-ray diffraction study

A para-sexiphenyl monolayer of near up-right standing molecules (nominal thickness of 30 Å) is investigated in-situ by X-ray diffraction using synchrotron radiation and ex-situ by atomic force microscopy. A terrace like morphology is observed, the step height between the terraces is approximately one molecular length. The monolayer terraces, larger than 20 μm in size, are extended along the [0 0 1] direction of the TiO₂(1 1 0) substrate i.e. along the Ti-O rows of the reconstructed substrate surface. The structure of the monolayer and its epitaxial relationship to the substrate is determined by grazing incidence X-ray diffraction. Extremely sharp diffraction peaks reveal high crystalline order within the monolayer, which was found to have the bulk structure of sexiphenyl. The monolayer terraces are epitaxially oriented with the (0 0 1) plane parallel to the substrate surface (out-of-plane order). Four epitaxial relationships are observed. This in-plane alignment is determined by the arrangement of the terminal phenyl rings of the sexiphenyl molecules parallel to the oxygen rows of the substrate.     

Au deposits on graphite: On the nature of high temperature desorption peaks in CO thermal desorption spectra

Due to the discovery of Au as a catalyst for low temperature CO oxidation, the adsorption of CO on Au surfaces has attracted a lot of attention recently. On stepped and rough single crystal surfaces as well as on deposited particles two characteristic desorption states above 100 K have been observed via TPD. We have studied Au deposits on graphite in order to elucidate the nature of these desorption peaks in more detail. For this purpose, Au was deposited at 100 K and 300 K on HOPG as a weakly interacting support. In analogy to other supports, we obtain two desorption states (∼140 K and ∼170 K) whose relative intensities depend strongly on the deposition temperature with the high temperature peak being much more pronounced for the 100 K deposits. After annealing to 600 K, both states drastically lose intensity. XP spectra, on the other hand, show virtually no decrease of the Au 4f intensity as would be expected for desorption or significant changes of the particle morphologies. We conclude that both desorption peaks are defect-related and connected with under-coordinated Au atoms that are lost for the most part upon annealing. These sites could be located at the perimeter of dendritic islands or on small, defect-rich particles in addition to larger particles not adsorbing CO at 100 K. Preliminary STM results are in favour of the second interpretation.     

40Ar+诱导无定形碳到金刚石纳米晶相变的研究

通过60 keV的⁴⁰Ar⁺辐照无定形碳靶合成了大量尺寸不同的金刚石纳米颗粒.高分辨透射电子显微镜配合能量色散X射线谱和电子衍射以及Raman谱分析的结果表明，这些嵌于具有扰动石墨结构薄膜中的纳米金刚石颗粒，其成核率很高(约为10¹³/cm²)，而且可以生长到较大的尺寸，有的甚至可以达到微米量级.对其相转变过程也进行了初步探讨. 关键词： 离子束 金刚石纳米晶 相变 透射电子显微镜     

Study of nitrogen ion implantation and diffusion phenomena on thin chromium layers followed by the atomic force microscopy and secondary ion mass spectroscopy techniques characterization

This research investigates the effect of ion implantation dosage level and further thermal treatment on the physical characteristics of chromium coatings on Si(1 1 1) substrates. Chromium films had been exposed to nitrogen ion fluencies of 1 × 10¹⁷, 3 × 10¹⁷, 6 × 10¹⁷ and 10 × 10¹⁷ N⁺ cm⁻² with a 15 keV energy level. Obtained samples had been heat treated at 450 °C at a pressure of 2 × 10⁻² Torr in an argon atmosphere for 30 h. Atomic force microscopy (AFM) images showed significant increase in surface roughness as a result of nitrogen ion fluence increase. Secondary ion mass spectroscopy (SIMS) studies revealed a clear increased accumulation of Cr₂N phase near the surface as a result of higher N⁺ fluence. XRD patterns showed preferred growth of [0 0 2] and [1 1 1] planes of Cr₂N phase as a result of higher ion implantation fluence. These results had been explained based on the nucleation-growth of Cr₂N phase and nitrogen atoms diffusion history during the thermal treatment process.     

The structure of monolayer SiO2 on Mo(1 1 2): A 2-D [Si-O-Si] network or isolated [SiO4] units?

In this letter, atomically resolved scanning tunneling microscopic (STM) images obtained from monolayer SiO₂/Mo(1 1 2) are presented. The results are consistent with a previously proposed structural model of isolated [SiO₄] units based on vibrational features observed by high-resolution electron energy loss spectroscopy (HREELS) and infrared reflection-absorption spectroscopy (IRAS), and oxygen species identified by ultra-violet photoemission spectroscopy (UPS). These results are inconsistent with a structural model that assumes a two-dimensional (2-D) [Si-O-Si] network. These data illustrate that a metal substrate, although coated with an oxide thin layer, can be directly imaged at the atomic-scale with STM.     

The effect of ITO films thickness on the properties of flexible organic light emitting diode

Indium tin oxide (ITO) thin films were deposited on cyclic olefin copolymer substrate at room temperature by an inverse target sputtering system. The crystal structure and the surface morphology of the deposited ITO films were examined by X-ray diffraction and atomic force microscopy, separately. The electrical properties of the conductive films were explored by four-point probing. Visible spectrometer was used to measure the optical properties of ITO-coated films. The performance of the flexible organic light emitting diode device with different thickness anode was investigated in this study.