Structural, Raman, and photoluminescence characteristics of ZnO nanowires coated with Al-doped ZnO shell layers

Al-doped ZnO (AZO) shell layers were coated on core ZnO nanowires to fabricate ZnO/AZO core–shell nanowires. The energy-dispersive X-ray spectra confirmed the presence of Al element in the shell layers, and the lattice resolved transmission electron microscopy image revealed that these layers corresponded to the hexagonal ZnO structure. The X-ray diffraction pattern exhibited a shift of the ZnO peaks, suggesting the substitutive incorporation of Al into the ZnO lattice. The A₁(LO) mode line in the Raman spectra was enhanced by the AZO coating. In the photoluminescence measurements, the AZO coating enhanced the intensity ratio of the UV to green emission.     

Mössbauer studies of impactites from Huamalies province in Huanuco Region

This report is about the X-ray diffraction and Mössbauer studies of three impactite samples denominated PMe-8, PMe-9 and PMe-11 from Huamalies Province in Huánuco Region, Peru. When terrestrial rocks are submitted to pressures higher than 60 GP, the majority is completely melted, forming a kind of glass called impactites. X-ray diffraction indicates the presence of quartz as the principal mineralogical phase in all samples. The ⁵⁷Fe Mössbauer spectra at room temperature of samples PMe-8 and PMe-9 show broadened spectra that were fitted using a distribution model. The most probable field of the magnetic component is 34 T, corresponding to the presence of small particles of goethite, confirmed by the 4.2 K spectrum. For the sample PMe-11, the MS showed the presence of well crystallized hematite.     

Formation of iron oxides in soils developed under natural fires and slash-and-burn based agriculture in a monsoonal climate (Chittagong Hill Tracts, Bangladesh)

Fire-induced mineral transformations have been investigated in composite mineral grains separated from the coarse sand fractions (400–2,000 μm) from Ultisols developed in the Chittagong Hill Tracts (Bangladesh). Magnetic and colour based separation (into light brown, dark red, and magnetic, dark red classes) were used to select the grains that were studied by Mössbauer spectroscopy. Aluminium substituted goethite (α-FeOOH) dominates the light brown particles. Fire transform the goethite into a poorly crystalline hematite (α-Fe₂O₃) dominating in the dark red particles. In the dark red, magnetic grains a recrystallized hematite dominates, but small amounts of maghemite (γ-Fe₂O₃) are also present. The latter is indicated by comparing the line intensities in spectra measurement with and without an external magnetic field.     

AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO

AlGaN/GaN high-electron-mobility transistors （HEMTs） with Al-doped ZnO （AZO） transparent gate electrodes are fabricated, and Ni/Au/Ni-gated HEMTs are produced in comparison. The AZO-gated HEMTs show good DC characteristics and Schottky rectifying characteristics, and the gate electrodes achieve excellent transparencies. Compared with Ni/Au/Ni-gated HEMTs, AZO-gated HEMTs show a low saturation current, high threshold voltage, high Schottky barrier height, and low gate reverse leakage current. Due to the higher gate resistivity, AZO-gated HEMTs exhibit a current-gain cutoff frequency （fT） of 10 GHz and a power gain cutoff frequency （fmax） of 5 GHz, and lower maximum oscillation frequency than Ni/Au/Ni-gated HEMTs. Moreover, the C-V characteristics are measured and the gate interface characteristics of the AZO-gated devices are investigated by a C-V dual sweep.     

Effect of Al content on the structure of Al‐substituted goethite: a micro‐Raman spectroscopic study

The characterization of X‐ray diffraction, X‐ray fluorescence, and field emission scanning electron microscope were used to confirm the successful preparation of Al‐substituted goethite with different Al content. The micro‐Raman spectroscopy was utilized to investigate the effect of Al content on the goethite lattice. The results show that all the feature bands of goethite shifted to high wavenumbers after the occurrence of Al substitution for Fe in the structure of goethite. The shift of wavenumber shows a good linear relationship as a function of increasing Al content especially for the band at 299 cm⁻¹ (R² = 0.9992). The in situ Raman spectroscopy of thermally treated goethite indicated that the Al substitution not only hinders the transformation of goethite, but also retarded the crystallization of thermally formed hematite. All the results indicated that Raman spectrum displayed an excellent performance in characterizing Al‐substituted goethite, which implied the promising application in other substituted metal oxides or hydroxides. Copyright © 2013 John Wiley & Sons, Ltd.     

Characterization of Wallpaintings from the Caliphal Baths of Cordoba (Spain) by X-Ray Diffraction and Raman Microspectroscopy

Wallpainting fragments from the Caliphal Baths of Cordoba, Spain, were studied in this work for the first time. X-ray diffraction (XRD) and Raman microspectroscopy allowed the chemical nature of the pigments used by the Arabic artists of the time to be identified. All pigments were applied over a gypsum priming layer. The white, red, and yellow colors used were obtained from gypsum, hematite, and goethite, respectively. Some pigments were prepared by mixing these materials. The analytical techniques used also allowed the mortar material to be identified. The results of this study may be useful to develop effective conservation strategies for archaeological remains.     

Carriers-assisted Enhanced Ferromagnetism in Al-doped ZnMnO Nano-crystallites

Zn_0.95-xAl_xMn_0.05O (x=0, 0.03, 0.05, and 0.07) dilute magnetic semiconductor materials have been synthesized by sol-gel auto-combustion technique. The effect of Al doping on the structural, electrical, and magnetic properties has been investigated. X-ray diffraction studies demonstrate the existence of single phase characteristic hexagonal wurtzite type crystal structure, similar to the host ZnO, in all the synthesized compositions. Although, the microscopic images revealed that the grains were clustered, yet some individual grains could be seen to have hexagonal texture. Electrical resistivity was observed to decrease with the rise of temperature up to 450 oC, depicting the characteristic semiconductor behavior. Room temperature ferromagnetic behavior was observed in all the compositions. The value of saturation magnetization increased with the increase of Al concentration in ZnMnO system referred to the gradual enhancement of free carriers.     

Al掺杂ZnO多晶的热电输运性质研究

采用固相反应法制备了六方纤锌矿结构Zn1-xAlxO(0≤x≤0.03)系列多晶,探究了Al掺杂对ZnO多晶的微观形貌和热电输运性质的影响.结果表明,Al掺杂促使ZnO晶粒长大联结,晶界减少,x＞0.003时出现在晶界分布的ZnAl2O4尖晶石相.掺杂后样品由ZnO的半导体行为转变为电阻率显著下降的金属行为,且x=0.003有最小的室温电阻率～1.7 mΩ·cm,主要由于掺杂使样品载流子浓度和迁移率显著提高,x=0.003时载流子浓度和迁移率为最高,分别为1.05×1021 cm-3和20 cm2/V·s;300 ～900 K下掺杂样品热电势的绝对值和功率因子均随温度升高而增大,x =0.003时有最大的室温功率因子～0.4mW/m·K2.综合得到ZnO中Al掺杂的饱和固溶度x≈0.003.     

Enhanced optical properties of Al-doped TiO2 thin films in oxygen or nitrogen atmosphere

Al-doped TiO₂ (TiO₂:Al) films were deposited by simultaneous RF magnetron sputtering of TiO₂ and DC magnetron sputtering of Al. The advantage of this method is that the Al content could be independently controlled. By depositing in a mixed Ar-O₂ or a mixed Ar-N₂ atmosphere, the TiO₂:Al film became more stoichiometric and the nanocrystallinity was enhanced. The nonlinear refractive index of TiO₂:Al film deposited in a pure Ar, a mixed Ar-O₂ or a mixed Ar-N₂ atmosphere was measured by Moiré deflectometry, and was of the order of 10⁻⁸ cm² W⁻¹. For the TiO₂:Al film deposited in a pure Ar atmosphere, the porosity was higher corresponding to the lower transmission. However, the porosity of TiO₂:Al film decreased as the oxygen or nitrogen pressure increased. Especially, as the ratio of O₂ to Ar pressure increased to 0.22, TiO₂:Al film exhibited lower porosity, higher visible transmission, higher linear refractive index, lower stress and lower stress-optical coefficient.     

Al掺杂ZnO粉体的第一性原理计算及微波介电性质

采用基于密度泛函理论的第一性原理平面波超软赝势方法,计算了本征ZnO和Al掺杂ZnO的能带结构和介电常数,又采用固相反应法在６００　℃保温1.5 h分解得到ZnO和Al掺杂ZnO粉体．X射线衍射（XRD）对所得粉体的结构进行表征,X射线光电子谱（XPS）对掺入的Al的形态进行分析,矢量网络分析仪在8.2—12.4 GHz测试样品的微波介电性能．结果表明,Al掺杂后ZnO的晶胞体积基本不变,费米能级进入导带．实验所得粉体均具有ZnO的纤锌矿结构,Al是以替位杂质的形式进入ZnO晶格．实验与计算结果相比,都表 关键词： Al掺杂ZnO 介电性质 能带结构 第一性原理