钪元素对AB2型合金Zr1-xScxMn0.6V0.2Ni1.2Co0.1（x=0～1）储氢和电化学性能的影响

用真空电弧熔炼方法制备了Zr1-xScxMn0.6V0.2Ni1.2Co0.1(x=0～1)AB2型储氢合金,研究了Sc元素替代Zr对合金的微观组织结构、气态储氢及电化学性能的影响。研究结果表明,Zr1-xScxMn0.6V0.2Ni1.2Co0.1合金主要是由FCC型C15相、CsCl型结构的(ScZr)Ni相和少量的Ni10Zr7相组成,随Sc含量的增加,C15相丰度逐渐减小,(ScZr)Ni相丰度逐渐增加,当x=0.2时Ni10Zr7相基本消失;Sc元素对合金的首次气态吸氢动力学行为影响较大,随Sc含量的增加,合金吸氢动力学性能逐渐变缓,但吸氢容量逐渐提高,直至达x=1.0时的最大吸氢量1.87%;Sc元素对合金吸氢PCT曲线平衡氢压的影响规律不明显,随Sc含量增加,合金氢化物的形成焓ΔH从-26.66 kJ.mol-1逐渐减小到-8.14 kJ.mol-1。Sc元素的加入可明显改善合金电极的活化性能,提高放电容量,随Sc含量的增加,合金电极最大放电容量从x=0时的350.3 mAh.g-1增加到x=1时的429.8 mAh.g-1,呈先减小后增大的趋势,但电极容量的保持率S100随Sc含量增加而快速下降。     

Varieties fibred over abelian varieties with fibres of log general type

Let (X,B)$(X,B)$ be a complex projective klt pair, and let f:X→Z$f:X\to Z$ be a surjective morphism onto a normal projective variety with maximal albanese dimension such that _KX+B$K_X+B$ is relatively big over Z. We show that such pairs have good log minimal models.     

An investigation on surface tensions of Pb-free solder materials

Surface tensions of some Pb-free solder systems such as Ag–Bi–Sn with cross-sections Ag/Bi = 1/1, Ag/Bi = 1/2, Ag/Bi = 2/1, In–Sn–Zn with cross-sections Sn/In = 1/1, Sn/In = 1/3 and (Ag₇Cu₃)_100?x Sn_x with cross-section Ag/Cu = 7/3 are calculated from the sub-binary surface tension data using the models, such as the Muggianu, Kohler, Toop models, Butler’s equation and Chou’s General Solution Model (GSM) at 873, 923 and 1073 K, respectively. The surface tension of In–Sn–Zn increases wavily with increasing amount of Zn and it is found that the best models are the GSM for both cross-sections in question while GSM becomes the best model for (Ag₇Cu₃)_100?x Sn_x alloy in the whole experimental range. Moreover, the surface tension of (Ag₇Cu₃)_100?x Sn_x decreases slightly with increasing amount of Sn. The Muggianu, Butler and Butler models are determined as the best models for the cross-sections in the order given above for entire measurement range, respectively, and the surface tension of Ag–Bi–Sn decreases slightly with an increasing amount of Bi and Ag but increases with increasing Sn in liquid alloys.     

Microstructures and soft magnetic properties of Fe80P20-xSix (x = 4.5–6.5) amorphous ribbons

Fe-based amorphous ribbons with excellent soft magnetic properties and mechanical properties were prepared in the Fe–Si–P ternary system. Enhanced soft magnetic properties could be achieved through annealing treatment of the ribbons for 1 h at 325 °C, which is far below the glass transition temperatures (462–474 °C). Icosahedral medium-range ordering with a size range of around 2 nm occurred throughout the amorphous matrix during the low-temperature annealing treatment. The annealed ribbons exhibited improved magnetic saturation of over 185 emu/g while maintaining good mechanical flexibility. During icosahedral ordering, the distance between the Fe atoms and the coordination number within the amorphous ribbon can be optimised for achieving high magnetic saturation. However, nanocrystallisation of the SiP and Fe₂P transition phases embedded within the amorphous matrix occurred after the annealing treatment for 1 h at 385 °C, which caused deterioration of the soft magnetic properties and mechanical flexibility of the ribbons. Therefore, the combination of high magnetic saturation and mechanical flexibility of the amorphous ribbons could be optimised through low-temperature annealing treatment without any nanocrystallisation.     

Spectral probing of carrier traps in Si–Ge alloy nanocrystals

Photogenerated carriers in Si–Ge alloy nanocrystals (NCs) prepared by co‐sputtering method were investigated by mean of transient induced absorption. The carrier relaxation features multiple components, with three decay life times of τ ≈ 600 fs, 12 ps, and 15 ns, established for Si_0.2Ge_0.8 alloy NCs of a mean crystal size of 9 nm and standard deviation of 3 nm. Deep carrier traps, identified at the boundary between the NCs and the SiO₂ host with the ionization energy of about 1 eV, are characterized by a long‐range Coulombic potential. These are responsible for rapid depletion of free carrier population within a few picoseconds after the excitation, which explains the low emissivity of the investigated materials, and also sheds light on the generally low luminescence of Si/Ge and Ge NCs. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Transport of waves in disordered waveguides: A potential model

We study the statistical properties of wave transport in a disordered waveguide. We first derive the properties of a “building block” (BB) of length δL starting from a potential model consisting of thin potential slices. We then find a diffusion equation—in the space of transfer matrices that describe our system—which governs the evolution with the length L of the disordered waveguide of the transport properties of interest. The latter depend only on the mean free paths and on no other property of the slice distribution. The universality that arises demonstrates the existence of a generalized central-limit theorem. We have developed a numerical simulation in which the universal statistical properties of the BB found analytically are first implemented numerically, and then the various BBs are combined to construct the full waveguide. The reported results thus obtained are in good agreement with microscopic calculations, for both bulk and surface disorder.     

First-principles study of fundamental properties and electronic structure of alloys

We have performed first-principles calculations using full-potential augmented-plane-wave method to investigate the fundamental properties of the Cd_1–xZn_xTe alloys. The composition dependence of the lattice constant and the bulk modulus have been estimated from total energy calculations. By means of the analytical fitting the band structures in the vicinity of the Brillouin center a complete set of effective electron- and hole-masses have also been derived. In order to further understand the effects of the chemical bonding on the above macroscopic properties we then studied the relaxation behaviors and the changes of the electronic states upon alloying for x=0.25 system. The results presented here yield a general understanding of the fundamental properties for the Cd_1–xZn_xTe crystals studies.     

(111)取向生长Pb(Zr0:95Ti0:05)O3纳米晶薄膜的铁电与热释电特性

" 在Pt/Ti/SiO2/Si基片上用溶胶-凝胶法与快速退火工艺制备了300 nm厚的锆钛酸铅Pb(Zr0:95Ti0:05)O3 (PZT95/5)反铁电薄膜．结果显示600~700 ℃晶化处理的钙钛矿PZT95/5薄膜具有高度(111)取向生长特性．薄膜的电性能测量采用金属-铁电-金属电容器结构．在20 V电压作用下,600~700 ℃晶化处理的PZT95/5薄膜显示出饱和电滞回线．在1 kHz下,600、650和700 ℃晶化的薄膜介电常数与损耗分别为519与0.028、677与0.029、987     

3D ordered macro-/mesoporous Ni_xCo_(100-x) alloys as high-performance bifunctional electrocatalysts for overall water splitting

Electrochemical water splitting is a facile and effective route to generate pure hydrogen and oxygen.However,the sluggish kinetics of hydrogen evolution reaction(HER) and especially oxygen evolution reaction(OER) hinder the water splitting efficiency.Meanwhile,the high-cost of noble-metal catalysts limit their actual application.It is thus highly urgent to exploit an economical and earthabundant bifunctional HER and OER electrocatalyst to simplify procedure and reduce cost.Herein,we synthesize the three-dimensionally ordered macro-/mesoporous(3 DOM/m) Ni_xCo_(100-x) alloys with distinctive structure and large surface area via a dual-templating technique.Among them,the3 DOM/m Ni_(61)Co_(39) shows the lowest overpotentials of 121 mV and 241 mV at 10 mA/cm~2 for HER and OER,respectively.Furthermore,when employed for water splitting,the Ni_(61)Co_(39) only requires 1.60 V to approach 10 mA/cm2 and presents excellent stability.These encouraging performances of the Ni_(61)Co_(39)render it a promising bifunctional catalyst for overall water splitting.