ZnSe及ZnSe/GaAs异质结构中压力导致的直接禁带向间接禁带的转变

用经验赝势方法计算了体ZnSe以及ZnSe/GaAs单异质结系统中ZnSe外延层г、X、L等特殊对称点导带底能量随压力的变化。结果表明，同Si、Ge、GaAs等半导体材料不同，ZnSe的X点导带底具有正的压力系数，但比г点的压力系数小，这是ZnSe材料以及ZnSe基异质结构材料发生直接禁带向间接禁带的转变时所需转变压力较大的根本原因。研究了ZnSe/GaAs异质结构中晶格失配造成的应变对外延层г、X、L对称点压力系数的影响，表明这种晶格失配造成的应变可以极大地减小ZnSe外延层材料由直接禁带向间接禁带的转变压力。     

[Na(18-C-6)]2[Cu(i-mnt)2]的合成与结构分析

研究了18-冠-6与Na2[Cu(i-mnt)2][i-mnt=异丁二腈烯二硫醇阴离子,S2CC(CN)2-2]的反应,得到的配合物[Na(18-C-6)]2[Cu(i-mnt)2](1)通过元素分析、红外光谱、X射线单晶衍射进行了结构分析.配合物为单斜晶系,空间群P2(1)/c.晶体学结构数据a=1.2819(11),b=1.1793(10),c=1.4928(13)nm,β=99.121(16)°,V=2.228(3)nm3,Z=2,Dcaled.=1.369g/cm3,F(000)=958,R1=0.0521,wR2=0.1003.1中的[Cu(i-mnt)2]基团通过配体i-mnt的氮原子与两个[Na(18-C-6)]基团中的钠原子成键,形成稳定的中性配合物.     

A Facile Synthesis of α-Phenylthio-α,β-Unsatuated Esters

α-phenylthio-α，β-unsaturated esters 6 were synthesized by Witting reaction of 3.which were prepared by a phenylsulfenyllation-trans-ylidation reaction.     

Structural Characteristics of Liquid Sn

We investigate the structural properties of liquid Sn. With the help of the internal friction (tanФ) method, it is found that a peak appears in the tan Ф - T curve, suggesting that an anomalous discontinuous temperatureinduced structure change may take place in liquid Sn. From the experimental data of pair distribution functions, we calculate the viscosity η and the excess entropy S and it is found that there are a peak of viscosity in the η-T curve and a bend of excess entropy in the S - T curve, which give a positive support to the appearance of the internal-friction peak in the tan Ф- T curve.     

三核铜（I）配合物的合成与荧光光谱

室温下，通过双核配合物[Cu(dppm)(NO3)]2(dppm=双二苯基膦甲烷)与四苯基硼钠在甲醇和二氯甲烷混合溶剂中反应制备了三核铜(I)配合物[Cu3(dppm)3(NO3)(OH)](NO3)，经过红外光谱、热重分析、核磁和ES-MS等现代分析手段表征了配合物的物理化学性质，并进一步研究了配合物在室温下的荧光光谱特征。     

芴与硒吩共聚物的光致发光与电致发光研究

采用不同共聚比例的9，9-二辛基芴和硒吩的共聚物制备了发光二极管。研究了不同硒吩含量对器件性能的影响。针对共聚物的特点和器件存在的问题，采用阴极界面修饰及高分子共混的方法。使器件的性能得以提高。     

Dissociation and Coulomb Explosion of H2^4＋ in S^q＋ ＋H2 Collisions

We have investigated fragment emission from molecularions in H2^r collisions between S^q and H2 with incident energies of 12.5, 15.625, 18.75, 21.875, 25, 28.125, 31.25, 34.375, 37.5, 40.625, and 43.75 keV/u, respectively. The energy distributions of the fragments are measured by time-of-flight techniques. The experimental results show evidences for molecular Coulomb explosion and dissociation. A program[1] is estab-lished based on the Monte Carlo technique to simulate the time-of-flight spectrum of fragment ions with different initialkinetic energy in ion-Molecule collisions. Simulations are done for S^2 H2 collisions and compared with experimental results.     

T2铜的低温比热

在1.4—27K的温区内测量了纯度为99.9％的国产T_2铜的比热,得出了T_2铜的电子比热系数γ为0.68mJ·mol_(-1)·K_(-2),德拜温度θ_D为339.7K。与国外的比热数据比较,显然在纯度相同的条件下,比热数据是一致的,且可以互换。