用原子位形几率波理论研究插层化合物MxTX2中M离子的有序结构

本文就插层化合物M_xTX₂中占据八面体间隙的M离子建立了离子-空位格气模型.用原子位形几率波理论研究了M离子的有序结构,得到了3种最稳定的有序结构,并定量地分析了相互作用参数对有序结构形成的决定作用.最后对已有实验结果进行了分析和讨论.     

APON系统ONT中AAL5CPCS子层的实现

本文介绍了APON的系统结构和网络分层，并根据AAL5 CPCS子层实现的功能及DSP的优良特性，给出了APON系统ONT中AAL5公共会聚子层的一种实现方案，即应用DSP实现CPCS子层的各项功能。     

Theoretical Design of High-spin Organic Molecules with —^＊N—S— as a Spin-containing Fragment and Heterocycle as End Groups

IntroductionDesigns and syntheses of organic molecules withvery high-spin ground states have been a topic of greatinterest[1—8].One of the rational approaches to desig-ning high-spin molecules,which has been proposedand studied by several groups[9,10],in…     

倾斜下降管气液两相分层流截面含气率的计算与液层高度的预测

分层流是气液两相流中常见的流动型式，分层流中液层高度是计算的基本数据，由于界面波的存在，对液层的测量和预测都很困难．Ｖｌａｃｈｏｓ提出了预测气液两相分层流液层厚度的关系式，但这一关系式并不适用于倾斜下降管气液两相流．本文提出了计算倾斜下降管气液两相分层流截面含气率的理论模型，在这种模型下得到的截面含气率和实验结果符合良好．在大量实验的基础上，考虑了倾角、管径、气液各相折算速度的影响，根据实验数据提出了预测液层厚度的关系式。     

基于频域方法的三维物体分层重现

基于频域方法实现了数字记录和再现三维物体离轴全息图.通过频谱对应关系求得各个面的频谱分布,使用数字滤波方法,成功地消除了零级衍射和共轭像;通过改变再现距离,分别获取了三维物体各个截面的再现像.     

塞曼石墨炉原子吸收光谱法直接测定垃圾焚烧废气中锡

采用钯加抗坏血酸溶液作为基体改进荆，用塞曼效应扣除背景，对消化后的垃圾焚烧废气滤筒直接进行测定。方法的检出限为100pg，线性范围为0．2～4ng，回收率为96．8％～102．0％。     

Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.     

Studies on the Model Synthesis of the Brassinolide and Dolicholide‘s Side Chains

A highly stereoselective synthesis of the side Chain enantiomers of brassinolide and dolicholide through an aldol reaction of 2-(4-methoxy benzyloxyl) proplonylaldehyde (5) with the anion of 1- ( tert -butyldimethylsiloxy )-3-methyl-2-butanone ( 6 ) is described.