镍-酸性铬兰K络合物吸附波

用微分脉冲溶出伏安法研究了镍(11)与酸性铬兰K(ACBK)所生成的络合物在悬汞电极上的电化学特性及电化学反应机理，发现电极反应为镍与酸性铬兰K所生成的络合物吸附在电极表面后发生的不可逆还原。在HCl-硼砂介质中(pH8．67)，络合物在-316mV处有一吸附还原峰，其峰电流与镍浓度在0．001～0．010μ/mL范围内呈现良好的线性关系，其最低检出浓度为0．0005μg／mL。     

红光激发下掺Ho3+氟化物薄膜的上转换发光

利用激光脉冲沉淀法制备了稀土Ho~(3 )掺杂的氟化物薄膜。观测到处于薄膜中的Ho~(3 )离子在632.8nm红光激发下的上转换发射。这些上转换发射包括:~5S_2→~5I_7,~5F_4→~5I_7和~5S_2→~5I_8。     

微波吸收法研究Mn,Cu掺杂对ZnS:Mn,Cu光生载流子复合过程的影响

采用微波吸收法，测量了ZnS:Mn,Cu粉末材料受到超短脉冲激光激发后，其光生电子和浅束缚态电子的衰减过程.发现Mn,Cu的浓度对导带电子的寿命有明显的影响，提高掺杂浓度会使光生电子的寿命大大缩短，还研究了掺杂浓度对光致发光强度的影响. 关键词： 发光材料 硫化锌 光电子 微波吸收技术     

Crystal Structure of Adduct 2-Phenyl-imidazo [ 4,5-f ] 1,10-phenanthroline Methanol

The structure of the title adduct comprises a phenanthroline derivative 2-phenyl-imidazo[4,5-f]1,10-phenanthroline and a methanol.The composition of the crystalline adduct was characterized as C19H12N4.CH3OH.It belongs to orthorhombic system,space group Pna21 with a=1.3693(4)nm,b=2.2988(7)nm,c=0.51338(15)nm,V=1.6160(8)nm^3.Z=4,and final R1=0.0423.wR2=0.1012 .Crystal structure shows that all the 19 carbon atoms and 4 nitrogen atoms are coplanar.The bond length data indicated that a very extensive conjugation system was formed.This conjugation makes the compound being a potentially excellent energy transformer used for luminescent materials.     

溶胶凝胶软石印法制备Zn_2SiO_4∶Mn图案化薄膜及其发光性能的研究

采用溶胶 凝胶法制备了Zn2SiO4∶Mn薄膜并结合毛细管微模板技术实现了薄膜的图案化,利用X射线衍射(XRD),原子力显微镜,光学显微镜,发光光谱等手段对Zn2SiO4∶Mn的结晶过程、发光性质进行了研究。XRD结果表明,溶胶 凝胶法合成的样品在800℃时已开始结晶,在1000℃时可得到纯相的Zn2SiO4∶Mn,这比传统的固相法的烧结温度低150℃。Zn2SiO4∶Mn薄膜的激发光谱在220nm和280nm之间有一个强的吸收峰,峰值位于248nm,发射光谱的最大值位于522nm,为绿光发射。从原子力显微镜照片可知组成薄膜的粒子比较均匀,其平均直径为220nm。我们获得了四种图案化宽度,分别是5,10,20,50μm。光学显微镜的结果表明,图案薄膜烧结后相对于烧结前有10%～20%的收缩。     

绿色荧光粉YAGG∶Tb,Gd用于FED的尝试

FED器件的发展迫切需要具有化学和热稳定性 ,高亮度 ,长寿命的新型荧光材料。本文合成了Gd3 +离子共掺杂的YAGG∶Tb获得了YAGG∶Tb ,Gd ,并将其用于 0～ 30 0 0V低压范围 ,对其在不同电压和电流密度下的发光特性进行了测试。结果表明 ,该种材料特性优于ZnO∶Zn并且不存在电压与电流饱和     

Efficient Visible Electroluminescence from Porous Silicon Diodes Passivated by Carbon Films

By using n-butylamine as a carbon resource,carbon film is deposited on the p-n porous silicon (PS) surface with a radio-frequency glow discharge plasma system.Raman spectra and infrared reflection (IR) spectra of the carbon films indicate that there are amine-group and hydrogen atoms therein.The IR spectra of the passivated PS samples exhibit that the PS surfaces are mainly covered with Si-C,Si-N and Si-O bonds.Electroluminescence (EL) spectra show that the EL intensity of the passivated PS diodes increases greatly and the blueshift of the EL peak occurs compared with the diodes without treatment.Both of these are stable while the passivated diodes are exposed to the air indoors.The I-V characteristics reveal that the passivated diodes have a smaller series resistance and a lower onset voltage.The influence of the carbon film passivation on EL properties of PS has also been discussed.The results have proven that carbon film passivation is a good way to enhance the PS luminescent intensity and stability.     

新型AFM探针的制备及应用

采用熔拉 -腐蚀复合方法 ,将普通单模石英光纤制成直锥形光纤探针。利用自制工具将探针打弯 ,制成悬臂式光纤探针 ,在AFM上取得了较理想的测试结果。将自制光纤探针和商用硅材料探针获得的两种扫描图像进行了对比 ,分析了悬臂式光纤探针的特点     

Photoluminescence Characterization of Silicon Nanoparticles Hybridized Europium Complex

A europium complex Eu (DBM)3 TPPO (Eu tris(benzoylmethide)-(triphenylphosphine oxide)) and silicon nanoparticles have been hybridized.The hybridization can evidently change the photoluminescence (PL) characteristics of the Eu complex in the following aspects:under an excitation of 390nm,the intensity of the PL peak at 611nm due to the ^5Du-^7F2 transition of the Eu^3 ions has been increased by 30%,and thc integrated PL intensity in the visible range has been increased by nearly 3 times;the PL excitation efficiency beyond 440nm has been improved cvidently;the peak in the PL excitation spectrum shifts from 408nm to 388nm,and the PL decay time decreases from 2.07 to 0.96μs,The experimental results indicatde that in the PL process,the photoexcited energy may transfer from the silicon nanoparticlcs to the Eu^3 ions.     

像增强器用中波红外辐射可激励的新型荧光材料

1 引言目前,许多研究都集中于研制各种用途的中波红外成像系统。这些应用从工业用热成像一直扩展到探测车辆、导弹等的军用热成像。可反映中波红外成像目前技术水平的是加工碲镉汞、锑化铟等半导体探测器的线阵或面阵,并把它们组装到一适当光学成像系统。但是,材料和器件的产额低,这种器件不仅制作难而且成本高。本文介绍一种加工成本低用于中波红外成像的新型探测介质,具体地讲,这种新介质是一种可将中波红外