The spreading behaviour of perfluoropolyether droplets on solid surfaces

The spread of perfluoropolyether （PFPE） droplets on solid surfaces has been measured from the top-down view through a microscope system. Effects of substrates, molecular weight and end-group functionality on spreading of the PFPE droplets have been studied experimentally and the results were compared with those by molecular dynamics （MD） simulations. Silicon wafer and diamond-like carbon （DLC） substrates were used to study the effect of substrates on spreading. Two types of PFPE, Z-dol and Z-tetraol, with the same chain structure and various molecular weights （2000 and 4000 g/mol） were employed in experiments. Effect of molecular weight has been investigated through comparing the spreading of Z-dol 2000 and Z-dol 4000, and it is found that the increase of molecular weight will decrease the mobility of PFPE. Comparison between spreading of Z-dol and Z-tetraol of the same molecular weight proved that functional end group plays a significant role on the spreading of PFPE, which confirmed the MD simulation results.     

Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes

This paper investigates the dependence of current voltage characteristics of AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes （RTDs） on spacer layer thickness. It finds that the peak and the valley current density J in the negative differential resistance （NDR） region depends strongly on the thickness of the spacer layer. The measured peak to valley current ratio of RTDs studied here is shown to improve while the current density through RTDs decreases with increasing spacer layer thickness below a critical value.     

Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate

This paper reports that/3-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si（111） substrates. The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction,Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy reveal that the grown β-Ga2O3 nanorods have a smooth and clean surface with diameters ranging from 100 nm to 200 nm and lengths typically up to 2μm. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal. The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property. The growth mechanism is discussed briefly.     

Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy

This paper reports that the GaN thin films with Ga-polarity and high quality were grown by radio-frequency molecular beam epitaxy on sapphire （0001） substrate with a double A1N buffer layer. The buffer layer consists of a high-temperature （HT） A1N layer and a low-temperature （LT） A1N layer grown at 800℃ and 600℃, respectively. It is demonstrated that the HT-A1N layer can result in the growth of GaN epilayer in Ga-polarity and the LT-A1N layer is helpful for the improvement of the epilayer quality. It is observed that the carrier mobility of the GaN epilayer increases from 458 to 858cm^2/V.s at room temperature when the thickness of LT-A1N layer varies from 0 to 20nm. The full width at half maximum of x-ray rocking curves also demonstrates a substantial improvement in the quality of GaN epilavers by the utilization of LT-A1N layer.     

控制成核生长大尺寸C60，C70单晶

通过改进双温区双温度梯度方法，成功地控制成核密度，分别生长出线度可达6mm和5mm的大尺寸C₆₀，C₇₀单晶，并对其表面形貌和晶体结构进行了研究. 关键词：     

Schif碱药物与细菌作用的热力学研究

在不同温度条件下利用微量热法测定了大肠杆菌以及大肠杆菌在６种Ｓｃｈｉｆ碱药物抑制下的生长热谱，找出了该细菌生长的最佳生长温度，获得了该细菌在不同温度条件及抑制情况下生长代谢的速率常数，并借助化学反应中分子碰撞理论计算了该细菌生长的生长活化能，在此基础上借用化学反应速率的活化络合物理论模型对大肠杆菌生长代谢的生化反应进行了热力学分析     

单斜辉石固溶体CaMgSi2O6-NaAlSi2O6的合成机理研究

 研究了压力和温度对单斜辉石的结晶和晶粒纤维编织的影响。在较低的晶化温度下压力对单斜辉石结晶的影响很明显，这种影响随温度升高而减弱。然而，压力对单斜辉石晶粒纤维编织的影响正相反，在相同的高温下，较高压力下晶化的单斜辉石晶粒纤维比较低压力下得到的晶粒纤维粗壮，而且编织紧密。     

任意三角形单元上的三次Lagrange型插值逼近

本文推广了文［２］中的结果，对于任意三角形单元的三次Ｌａｇｒａｎｇｅ型插值多项式给出了原函数ｕ与被插函数Ｕ之间的误差估计     

“锥形嵌套"结构CNx纳米管的生长机理及拉曼光谱研究

在氮气、氢气以及氯化铵热解产生的氨气环境下,以钴作为催化剂,在780℃—940℃温度范围内使二甲苯与二茂铁受热分解,合成了CNx纳米管.在高分辨率透射电子显微镜下观察,合成的纳米管呈现“锥形嵌套”的形貌特征.从不同结构的分子面形成能的角度探讨了CNx纳米管的催化生长机理.不同温度下所制备样品的拉曼光谱研究表明,ID/IG值可以反映氮的掺杂所带来的纳米管结晶有序程度的降低,并通过G带向高波数移动证实了氮的掺杂.     

He-Ne激光诱变的香菇变异株遗传稳定性分析

对三株香菇菌种采用He-Ne激光(λ=6328nm)进行两次照射,筛选出三株比出发菌株菌丝生长速率分别提高173%、737%和426%的变异株,经传代培养及酯酶同工酶谱分析,变异株具有良好的遗传稳定性表明激光作为微生物新型诱变因子与传统化因子相比,具有正变率高、回复突变率低、遗传稳定性好的特点.