CTAB对四-(4-N-甲基吡啶)卟啉SERS谱的影响

研究了阳离子表面活性剂十六烷基三甲基溴化铵 (CTAB)对四 ( 4 N 甲基吡啶 )卟啉 (H2 TMPyP)及其银配合物 (AgTMPyP)在Ag胶中的表面增强拉曼散射 (SERS)谱的影响 .SERS光谱表明 ,吸附于Ag胶粒的H2 TMPyP与衬底银原子结合形成AgTMPyP ,加入CTAB后 ,部分AgTMPyP表面络合物还原为H2 TMPyP .相似的去金属化反应也出现在AgTMPyP/Ag胶 /CTAB体系中 .CTAB的加入使SERS谱带强度明显增加 .AgTMPyP的去金属化被认为是由于CTAB的存在使Ag胶颗粒表面附近微环境发生改变     

酞菁钴薄膜的折射率及吸收特性

通过真空镀法在单晶硅片上制备了酞菁钴薄膜，在波长扫描和入射角可变全自动椭圆偏振光谱仪上研究了ＣｏＰｃ薄膜的椭偏光谱并分析了其电子结构。     

利用浓盐酸脱苯基方法合成混合二烃基二氯化锡

利用RSnPh3(R= Me3SiCH2、EtMe2SiCH2、Bu)和浓盐酸直接混合加热反应,合成了三种混合二烃基二氯化锡,通过IR,1H NMR和MS的测定,对产物的结构进行了表征;并探讨了反应时间、温度和浓盐酸用量对该反应产率的影响.实验结果表明,该方法与其它方法比较,具有操作简单、反应速度快、环境污染小、产率较高等特点;当四烃基锡与浓盐酸的物质的量比为1:8,在97 ℃反应7 min,混合二烃基二氯化锡的产率大于70%.     

硫化锌掺钴对电子结构和光学性质的影响

根据密度泛函理论对钴掺硫化锌周围的品格进行了结构优化,计算得到了钴杂质周围的晶体结构、电子态密度分布和吸收光谱.计算结果表明,由于Co原子掺入ZnS晶格常数减小,导致晶格畸变;带隙变窄;吸收峰展宽至更长波长区域.     

Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer： Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices

We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr Mloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The GMR effect is not only stable up to 300℃ but also enhanced due to the improvement of the interfaces between Cu and magnetic layers. With high annealing temperature, the magnetoresistance (MR) ratio decreases rapidly as a result of serious layer interdiffusion. Dense stripe domains, which disappear after annealing at 300℃ for 1h, are observed in the sandwiched films. It is found that after patterning to elliptic stripe with aspect ratio of 6:1, the trilayers have a single domain and their MR ratio increases. The dynamic MR behaviour under an ac magnetic field indicates that the patterned stripes have good linear MR responses. Therefore, it is believed that the CoNbZr/Cu/Co PSV trilayers have strong potentials for spin-electronic devices including magnetic random access memory.     

异步拖动消阻尼谐振子

提出异步拖动消阻尼谐振子的实验模型及其两和中实胜的变形结构，用它构造的振动合成实验装置，可在不涉及电磁学、光学概念的力学范畴内完成各类振动合成的实验教学。     

脂溶性酞菁钴(III)为载体的高选择性亚硝酸根PVC膜电极

以自制的4,4',4',4''-四特丁基酞菁钴(II)为原料合成二氯4,4',4',4''-四特丁基酞菁钴(III)。以此为载体制备PVC膜电极。该电极的电位选择性次序明显不同于Hofmeister次序, 其最佳 响应斜率为-52mV/pNO2^-, 线性范围为3×10^-^5～1×10^-^1mol.dm^-^3NaNO2。通过改变配合物轴向的配位阴离子, 用紫外-可见光谱法对电极的响应机理作了初步探讨。     

对合的分解

Using the notion of biconnected sum we define the biconnected sum (T₁, M₁)§(T₂,M₂) of two involutions (T1M1) and (T2,M2) which is an involution on the biconnected sum M₁,§M₂. A connected involution is said to be reducible if it can be expressed as a biconnected sum of two connected involutions.Theorem Each connected involution (T, M) can be decomposed into a bi-connected sum of connected irreducible involutions (T, M)=(T₁, M₁)§…§(T_q,M_q),and (?) where the coefficients of H_{n_1}(M) are in Z/2 Z if M is unoriented, in Z if is oriented .     

不对称五氮齿扩展卟啉配合物的激发态性能研究

研究了不对称五氮齿扩展叶啉配合物的激发态性能.结果表明:随苯环上取代基变化,其发射光谱出现在770～820 nm的近红外区域,荧光量子产率小于0.02,寿命小于(?)ns.最低激发单重态能量、荧光量子产率分别和对位取代的 Hammett常数及亲电取代的Hammett常数存在很好的线性关系.激发三重态的能量为123kJ/mol左右,T_1～T_n吸收峰值出现在460～490nm区域,三重态寿命在几十微秒量级,敏化产生单重态氧的量子产率可高达0.9以上.