The colorimetric and ratiometric fluorescent detection of cyanide and sulfide in live cells,application for logic gate and bioimging

We described the design and synthesis of a colorimetric and ratiometric fluorescent probe based on a conjugated π-electron system that displayed differential fluorescence responses towards cyanide and sulfide and demonstrated its utility in intracellular ion imaging and logic gate.     

Rapid labeling of amino acid neurotransmitters with a fluorescent thiol in the presence of o‐phthalaldehyde

LIF detection often requires labeling of analytes with fluorophores; and fast fluorescent derivatization is valuable for high‐throughput analysis with flow‐gated CE. Here, we report a fast fluorescein‐labeling scheme for amino acid neurotransmitters, which were then rapidly separated and detected in flow‐gated CE. This scheme was based on the reaction between primary amines and o‐phthalaldehyde in the presence of a fluorescent thiol, 2‐((5‐fluoresceinyl)aminocarbonyl)ethyl mercaptan (FACE‐SH). The short reaction time (<30 s) was suited for on‐line mixing and derivatization that was directly coupled with flow‐gated CE for rapid electrophoretic separation and sensitive LIF detection. To maintain the effective concentration of reactive FACE‐SH, Tris(2‐carboxyethyl)phosphine was added to the derivatization reagents to prevent thiol loss due to oxidation. This labeling scheme was applied to the detection of neurotransmitters by coupling in vitro microdialysis with online derivatization and flow‐gated CE. It is also anticipated that this fluorophore tagging scheme would be valuable for on‐chip labeling of proteins retained on support in SPE.     

用计算机辅助测量液体的粘滞系数

主要说明用自制光电门配合计算机辅助测量液体粘滞系数的原理和方法,当小球挡住光电门的光路时,会使光敏管产生一个电脉冲,可以利用计算机声卡配合audition软件捕捉这个脉冲,从而实现小球下落时间的测量,提高实验的精确度。     

Atomic and Electronic Structures of Traps in Silicon Oxide and Silicon Oxynitride

Silicon oxide (SiO₂) and silicon oxynitride (SiO_xN_y) are two key dielectrics used in silicon devices. The excellent interface properties of these dielectrics with silicon have enabled the tremendous advancement of metal-oxide-semiconductor (MOS) technology. However, these dielectrics are still found to have pronounced amount of localized states which act as electron or hole traps and lead to the performance and reliability degradations of the MOS integrated circuits. A better understanding of the nature of these states will help to understand the constraints and lifetime performance of the MOS devices. Recently, due to the available of ab initio quantum-mechanical calculations and some synchrotron radiation experiments, substantial progress has been achieved in understanding the atomic and electronic nature of the defects in these dielectrics. In this review, the properties, formation and removal mechanisms of various defects in silicon oxide and silicon oxynitride films will be critically discussed. Some remarks on the thermal ionization energies in connection with the optical ionization energies of electron and hole traps, as well as some of the unsolved issues in these materials will be highlighted.     

Semiconductor optical amplifier (SOA)-assisted Sagnac switch for designing of all-optical tri-state logic gates

Tri-state logic plays a significant role in carry free arithmetical operation. Design of all-optical scheme of three basic tri-state logical operation (NOT, AND, OR) with the help of polarization encoded semiconductor optical amplifier (SOA)-assisted Sagnac interferometric switch has been studied and investigated in this present paper. Numerical simulation is also presented, which verifies the theoretical results. Insertion loss, contrast ratio, extinction ratio, amplitude modulation, bit error rate and signal to noise ratio values have also been analyzed.     

Ultra-low on-resistance high voltage (>600 V) SOI MOSFET with a reduced cell pitch

A low specific on-resistance (R S,on) silicon-on-insulator (SOI) trench MOSFET (metal-oxide-semiconductor-field-effect-transistor) with a reduced cell pitch is proposed.The lateral MOSFET features multiple trenches:two oxide trenches in the drift region and a trench gate extended to the buried oxide (BOX) (SOI MT MOSFET).Firstly,the oxide trenches increase the average electric field strength along the x direction due to lower permittivity of oxide compared with that of Si;secondly,the oxide trenches cause multiple-directional depletion,which improves the electric field distribution and enhances the reduced surface field (RESURF) effect in the SOI layer.Both of them result in a high breakdown voltage (BV).Thirdly,the oxide trenches cause the drift region to be folded in the vertical direction,leading to a shortened cell pitch and a reduced R S,on.Fourthly,the trench gate extended to the BOX further reduces R S,on,owing to the electron accumulation layer.The BV of the MT MOSFET increases from 309 V for a conventional SOI lateral double diffused metal-oxide semiconductor (LDMOS) to 632 V at the same half cell pitch of 21.5 μm,and R S,on decreases from 419 m · cm 2 to 36.6 m · cm 2.The proposed structure can also help to dramatically reduce the cell pitch at the same breakdown voltage.     

一种考虑IGBT基区载流子注入条件的物理模型

提出了一种考虑绝缘栅极双极晶体管(insulated gate bipolar transistor,IGBT) 基区载流子不同注入条件的物理模型. 在小注入和大注入情况下,分别建立描述IGBT基区载流子运动的输运方程(ambipolar transport equation,ATE),并确定边界条件. 采用傅里叶级数法求解载流子输运方程,并将计算结果分别与IGBT手册提供的实验数据和Hefner模型计算结果相比较,验证了本文提出物理模型的正确性. 关键词： 绝缘栅极双极晶体管 物理模型 注入条件 双极输运方程     

多光子偏振态与单光子高维空间态之间的相互变换及其应用

基于一种特殊的控制非门,实现多光子偏振态与单光子空间高维态之间的相互变换,使得对多光子偏振态的操作可以通过对单光子的操作来完成,由此可以实现任意多光子正定算符值测量和多光子任意幺正操作.这种实现方式是以一定概率完成的,但其效率要优于此前的方案,在目前的实验条件下是可行的. 关键词： 单光子空间态 特殊控制非门 线性光学多端口干涉仪     

Optical switching and logic gates with hybrid plasmonic-photonic crystal nanobeam cavities

We propose a hybrid resonance architecture in which a plasmonic element is coupled to a silicon-on-insulator photonic crystal nanobeam cavity operating at telecom wavelengths. It benefits from the combined characteristics of the photonic cavity and the plasmonic element, and exploits the unique properties of Fano resonances resulting from interactions between the continuum and the localized cavity states. As confirmed through 3D time-domain simulations, a strong cavity mode damping by the plasmonic element offers mechanisms of controlling a probe signal propagating in the nanobeam. It makes possible to create optical switching devices and logic gates relying on any optical nonlinear effect.