Polaron effects on third-harmonic generation in cylindrical quantum-well wires

Polaron effects on third-harmonic generation (THG) in cylindrical quantum wires with a finite confining potential are investigated. The THG coefficient is obtained by using the compact-density-matrix approach and an iterative method, and the numerical results are presented for GaAs/AlAs cylindrical quantum wires. The results show that the THG coefficient is greatly enhanced and the peak shift to the aspect of high energy when considering the influence of electron-phonon interaction.     

POSITIVE SOLUTION FOR NONLINEAR SINGULAR BOUNDARY VALUE PROBLEMS

Under suitable conditions on f(·,u), it is shown that the two-point boundaryvalue problem((u'))' + λq(t)f(u) = 0in (0, 1),u(0) = u(1) = 0,has two positive solution or at least one positive solution for λ in a compatibleinterval.     

Stability and Hopf bifurcation analysis on a simplified BAM neural network with delays

A delay-differential equation modelling a bidirectional associative memory (BAM) neural network with three neurons is investigated. Its dynamics are studied in terms of local analysis and Hopf bifurcation analysis. By analyzing the associated characteristic equation, its linear stability is investigated and Hopf bifurcations are demonstrated. The stability and direction of the Hopf bifurcation are determined by applying the normal form theory and the center manifold reduction. Numerical simulation results are given to support the theoretical predictions.     

Characterization of thin films on the nanometer scale by Auger electron spectroscopy and X-ray photoelectron spectroscopy

We describe two NIST databases that can be used to characterize thin films from Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) measurements. First, the NIST Electron Effective-Attenuation-Length Database provides values of effective attenuation lengths (EALs) for user-specified materials and measurement conditions. The EALs differ from the corresponding inelastic mean free paths on account of elastic-scattering of the signal electrons. The database supplies “practical” EALs that can be used to determine overlayer-film thicknesses. Practical EALs are plotted as a function of film thickness, and an average value is shown for a user-selected thickness. The average practical EAL can be utilized as the “lambda parameter” to obtain film thicknesses from simple equations in which the effects of elastic-scattering are neglected. A single average practical EAL can generally be employed for a useful range of film thicknesses and for electron emission angles of up to about 60°. For larger emission angles, the practical EAL should be found for the particular conditions. Second, we describe a new NIST database for the Simulation of Electron Spectra for Surface Analysis (SESSA) to be released in 2004. This database provides data for many parameters needed in quantitative AES and XPS (e.g., excitation cross-sections, electron-scattering cross-sections, lineshapes, fluorescence yields, and backscattering factors). Relevant data for a user-specified experiment are automatically retrieved by a small expert system. In addition, Auger electron and photoelectron spectra can be simulated for layered samples. The simulated spectra, for layer compositions and thicknesses specified by the user, can be compared with measured spectra. The layer compositions and thicknesses can then be adjusted to find maximum consistency between simulated and measured spectra, and thus, provide more detailed characterizations of multilayer thin-film materials. SESSA can also provide practical EALs, and we compare values provided by the NIST EAL database and SESSA for hafnium dioxide. Differences of up to 10% were found for film thicknesses less than 20 Å due to the use of different physical models in each database.     

von-Neumann正则环与左SF-环

环R称为左SF-环,如果每个单左R-模是平坦的.众所周知,Von-Neumann正则环是SF-环,但SF-环是否是正则环至今仍是公开问题,本文主要研究左SF-环是正则环的条件,证明了:如果R是左SF-环且R的每个极大左(右)理想是广义弱理想,那么R是强正则环.并且推广了Rege[3]中的相应结果.     

Rapid magnetization reversal in magnetic small particles induced by non-static bias field

Magnetization reversal processes by a switching field in single-domain nano-sized magnetic particles in the presence of a small transverse non-static bias field are studied. Applying an oscillating bias field instead of a static field, the reversal time becomes much shorter when the switching field is slightly stronger than the effective anisotropy field. A pulsed bias field of a suitably chosen duration in the nanosecond scale is found to induce a rapid switching, even when the switching field is smaller than the anisotropy field. The dependence of the reversal time on the frequency of an oscillating bias field and the duration of a pulsed bias field are studied. The present work thus complement the earlier studies on switching in the presence of a static bias field.     

关于 U-统计量渐近正态收敛速度的上、下界

§1.引言及主要结果设{X_n}是 i.i.d.的 r.v.序列,h(z,y)为对称的 Borel 可测实值函数,以 h(x,y)为核的 U-统计量定义为U_n=(?)~(-1)(?)h(X_i,X_j).(1)关于 U_n (适当正则化后)的分布函数向标准正态分布函数一致收敛速度的上方估计,1978年 Callaert 和 Janssen 在 Eh(X_1,X_2)=0,E|h(X_1,X_2)|~3<∞的条件下,给出了其 Berry-Essen 不等式.随后,1981年赵林诚,1983年林正炎又进一步减弱了关于矩的条件,得到相应的一些结果.作者最近重新研究了上述 U-统计量向正态逼近的一     

复制受限的环境演算中模态逻辑的内涵性

环境演算(MA)的模态逻辑AL进行了研究．在考虑了复制操作和限制操作的情况下，提出了逻辑等价的协归纳操作描述，并利用协归纳关系与进程结构同余关系进行比较，证明了若对MA加上约束条件得到子集MAIF^syn，此时逻辑等价(=L)与结构同余关系是等价的，即AL在MAIF^syn中是内涵的．同时发现由于复制操作的存在，AL的内涵性受到了影响，使得AL的区分能力被削弱，但通过对复制公式的构造验证了AL的表达能力．     

多元χ演算运行时错误的不可判定性

针对多元χ演算运行时刻通信安全的判定性问题进行了研究．通过从Lazyλ项到χ项的编码，将判定一个Lazyλ项是否有范式的问题归约为进程是否有通信错误的问题．证明了在多元χ演算中，通讯错误也是不可判定的．结论说明不存在算法直接来检测进程的通信安全性，而只有通过其他间接的手段(如构造类型系统)才能部分达到预防运行时错误的目的．