Manufacturing lead-time rules: Customer retention versus tardiness costs

Inaccurate production backlog information is a major cause of late deliveries, which can result in penalty fees and loss of reputation. We identify conditions when it is particularly worthwhile to improve an information system to provide good lead-time information. We first analyze a sequential decision process model of lead-time decisions at a firm which manufactures standard products to order, and has complete backlog information. There are Poisson arrivals, stochastic processing times, customers may balk in response to quoted delivery dates, and revenues are offset by tardiness penalties. We characterize an optimal policy and show how to accelerate computations. The second part of the paper is a computational comparison of this optimum (with full backlog information) with a lead-time quotation rule that is optimal with statistical shop-status information. This reveals when the partial-information method does well and when it is worth implementing measures to improve information transfer between operations and sales.     

Embeddings and hyperplanes of the Lie incidence geometry of type E7,1

This paper continues a program to show that for most of the standard Lie incidence geometries, all geometric hyperplanes arise from a necessarily absolutely universal embedding, by addingE _7,1 to the list. It follows from [5, 12] that any projective embedding of this point line geometry is a homomorphic image of the one afforded by the 56-dimensional module for the groupE ₇(K).This work was supported by a grant from the National Science Foundation.     

Synthesis, thermal treatment and characterization of cobalt ferrite-based nanocomposites

We have used time-differential perturbed angular correlation (PAC) spectroscopy with ¹⁸¹Ta-probes to study the electric field gradient at Zr-sites in synthetic zircon and hafnon between room temperature and 1,200°C. PAC spectra are similar to those obtained from naturally occurring zircons. In particular, a change in slope of the quadrupole coupling vs. temperature is observed in the synthetic zircon at the same temperature as seen in natural zircons from the Mud Tank carbonatite (Australia). The synthetic hafnon data also shows this feature but at somewhat higher temperature. Low-temperature PAC spectra of both synthetic zircon and hafnon have a clearly reduced anisotropy. We believe that the cause for this is a electronic defect, possibly created during the β-decay of the probe parent nucleus.     

Continuous modified Newton’s-type method for nonlinear operator equations

A nonlinear operator equation F(x)=0, F:H→H, in a Hilbert space is considered. Continuous Newton’s-type procedures based on a construction of a dynamical system with the trajectory starting at some initial point x ₀ and becoming asymptotically close to a solution of F(x)=0 as t→+∞ are discussed. Well-posed and ill-posed problems are investigated. Received: June 29, 2001; in final form: February 26, 2002?Published online: February 20, 2003 This paper was finished when AGR was visiting Institute for Theoretical Physics, University of Giessen. The author thanks DAAD for support     

Topologically knotted Lagrangians in simply connected four-manifolds

Vidussi was the first to construct knotted Lagrangian tori in simply connected four-dimensional manifolds. Fintushel and Stern introduced a second way to detect such knotting. This note demonstrates that similar examples may be distinguished by the fundamental group of the exterior.

     

Microwave structural studies of organoselenium compounds 1. Microwave spectra, molecular structure, and methyl barrier to internal rotation of dimethyl diselenide

The rotational spectra of nine isotopomers of dimethyl diselenide, CH₃SeSeCH₃, have been measured with a molecular-beam Fourier transform microwave spectrometer. The spectra were complex due to the presence of many isotopomers in natural abundance and the splitting caused by the interactions with two methyl internal rotors. The spectra were assigned and fit to experimental precision to an effective rotational Hamiltonian for molecules with two periodic internal motions. The spectra of the symmetric isotopomers are consistent with a C₂ equilibrium structure. The rotational constants were used to determine the r_s structure of the C-Se-Se-C frame with the results r(SeSe)=2.306(3) Å, r(SeC)=1.954(6) Å, ?(CSeSe)=99.8(2)°, ?(CSeSeC)=85.2(1)°. A barrier to internal rotation of the methyl groups of 395 ± 2 cm⁻¹ was derived from the internal rotation splittings.     

III-Nitride Quantum Devices—Microphotonics

Photonic devices based on III-nitrides offer benefits such as UV/blue emission, large band offsets of InN/GaN/AlN heterostructures allowing novel quantum well (QW) device design, and inherently high-emission efficiencies. Furthermore, due to their mechanical hardness and larger band gaps (when compared with conventional semiconductor devices), III-nitride-based devices may operate at much higher temperatures and voltages/power levels for any dimensional configuration and in harsher environments than other semiconductor devices and are expected to provide much lower temperature sensitivities. These are crucial advantages for many applications. Over the last decade, the physics of microsize photonic devices has been investigated. New physical phenomena and properties are expected to dominate as the device size scales down. The microsize light emitters offer benefits over edge emitters such as the ability to create arrays of individually controllable pixels on a single chip, enhanced quantum efficiency, and greatly reduced lasing threshold. Rapid progress in the area of III-nitride microphotonics has been made. The growth and fabrication of micron and submicron size photonic structures based on III-nitride wide bandgap semiconductors has been achieved, and the technology has made it possible to integrate arrays of optical elements to form active photonic-integrated devices. One example is an interconnected µ-LED with enhanced emission efficiency over the conventional LEDs for the same device area. Another example is a µ-LED array with independently addressed pixels or III-nitride microdisplay. III-nitride microdisplay may offer performance that is superior to microdisplays fabricated from liquid crystals and organic LEDs. The third example presented is III-nitride UV Focal Plane Arrays (UV-FPA) of detectors. So far, the operation of AlGaN UV-FPA with size up to 256×256 pixels with 30×30?μm² unit cells has been demonstrated. Together with the nature of their two-dimensional array, these active micro-photonic devices show promise in many important applications, such as optical communications, signal and image processing, optical interconnects, computing, enhanced energy conversion and storage, chemical, biohazard substances, and disease detection, missile and shellfire, atmospheric ozone-level, and flame sensing. III-nitride microlens arrays have been fabricated successfully for blue and UV wavelength applications on GaN and AlN. The successful fabrication of microlens arrays based on III-nitride materials opens the possibility for monolithically integrating nitride-based micro-size photonic devices, as well as coupling light into, out of, and between arrays of III-nitride emitters and detectors, especially for short wavelengths covering the green-blue to deep UV (200?nm) region. Nanofabrication and characterization of photonic crystals with diameter/periodicity as small as 100/180?nm on InGaN/GaN MQW has been achieved. An unprecedented maximum enhancement factor of 20 was obtained under optical pumping. Single-mode ridged optical waveguide devices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550?nm wavelength window. The feasibility of developing novel photonic integrated circuits based on III-nitride wide bandgap semiconductors for fiber-optical communications has been investigated.     

Analytical utility of valence band X-ray photoelectron spectroscopy of iron and its oxides,with spectral interpretation by cluster and band structure calculations

The valence band and core-level X-ray photoelectron spectroscopy (XPS) of iron and its oxides are reported, and the valence band spectra interpreted by various calculation models. The paper focuses upon the valence band region, which shows significant differences between the metal and the following oxidized iron species: FeO, Fe(3)O(4), alpha-Fe(2)O(3), gamma-Fe(2)O(3), alpha-FeOOH and gamma-FeOOH. The core region is of little analytical value as a means of distinguishing between these species, but the valence band region shows significant differences. These differences are consistent with spectra predicted by cluster and band structure calculations. Cluster calculations are valuable as a means for interpreting the spectra of iron oxides with multiple iron sites and defect characteristics.