A subwavelength MIM waveguide resonator with an outer portion smooth bend structure

We systematically investigate bends in metal–insulator–metal (MIM) subwavelength plasmonic waveguides resonator, realized in a two-dimensional (2D) plasmon polariton metal using a finite-difference time-domain (FDTD) method with perfectly matched layers (PMLs) boundary conditions. We apply the outer portion of the bend structure in resonator which can lead to remarkably good bending transmission characteristics. We discuss the existence conditions of different modes which affect the device performance, and analyze coupling efficiency of the outer portion of the bend structure resonator in detail. Meanwhile, we find that the first dip of the outer portion smooth bend resonator nearly linear shifts toward longer wavelengths with the increase of the effective waveguiding length. In addition, add/drop directional couplers are realizable using the present resonator structure.     

Self-imaging by a volume grating

The self-image phenomenon by a volume grating is proposed and theoretically analyzed. A theoretical model based on a path integral formulation to describe wave propagation through the grating inhomogeneous medium is applied. A modified version of the scalar diffraction theory Fresnel propagator is obtained which allows calculating the diffracted field amplitude by the grating. The proposed model is applied to amplitude and/or phase volume gratings. Remarkable features appear, in particular at the fractional Talbot distance 0.125z_T. In this case, if an in-phase real and imaginary grating modulation is considered a self-image intensity profile is observed for determined values of the absorptive and refractive parameters. On the other hand, a spatial comb intensity profile for a near half period shift between the real and imaginary grating modulations is found.     

Optimizing two-photon fluorescence of Coumarin dye by combined temporal–spatial pulse shaping

Two-photon fluorescence (TPF) process is an important research subject and can be optimized by pulse shaping techniques. In addition to temporal femtosecond pulse shaping by spectral phase modulation, we take into account of spatial configuration in the shaping process. The TPF of Coumarin 500 increases 40% with this additional modulation step. This spatial modulation results in not only transverse spatial profile variation but also effect of temporal redistribution at focus. We show that this spatial modulation is an important dimension for pulse shaping and optimization for TPF.     

MOCVD法制备Cu掺杂ZnO薄膜

通过金属有机物化学气相沉积(MOCVD)设备,在c-Al2 03衬底上生长本征和Cu掺杂ZnO( ZnO∶ Cu)薄膜.X射线衍射(XRD)谱观察到未掺杂的ZnO和ZnO∶ Cu样品都呈现出较好的c轴择优取向生长.X射线光电子能谱(XPS)表明Cu已掺入到ZnO薄膜中.利用光致发光(PL)测试对本征ZnO和ZnO∶ C...     

加偏压中心对称双光子光折变晶体中多变量空间灰孤子

 为了得到有偏压的中心对称双光子光折变晶体中存在多变量空间灰孤子的结果,基于中心对称双光子光折变晶体中空间灰孤子的基本理论,采用数值方法推导出了中心对称双光子多变量空间灰孤子归一化包络解的积分形式,并对其特性进行研究。结果表明：这种多变量空间灰孤子是由多束偏振方向和波长都相同的互不相干光束耦合形成的。当多变量空间灰孤子只包含有1个或2个光束分量成分时,它自动退化到中心对称双光子空间灰孤子或中心对称双光子非相干耦合灰 灰空间孤子对的情况。当这一多变量空间灰孤子在有偏压的中心对称双光子光折变晶体中传播时,各分量成分光束都能稳定传播。     

Improved electrical parameters of vacuum annealed Ni/4H-SiC (0 0 0 1) Schottky barrier diode

The reported work has been focused on the improvement of electrical parameters of Schottky diode using vacuum annealing at mild temperature in Ar gas ambient. Nickel Schottky barrier diodes were fabricated on 50 μm epitaxial layer of n-type 4H-SiC (0 0 0 1) substrate. The values of leakage current, Schottky barrier height (?_B), ideality factor (η) and density of interface states (N_SS) were obtained from experimentally measured current–voltage (I–V) and capacitance–voltage (C–V) characteristics before and after vacuum annealing treatment. The data revealed that ?_B, η and reverse leakage current for the as-processed diodes are 1.25 eV, 1.6 and 1.2 nA (at ?100 V), respectively, while for vacuum annealed diodes these parameters are 1.36 eV, 1.3 and 900 pA (at same reverse voltage). Improved characteristics have been resulted under the influence of vacuum annealing because of lesser number of minority carrier generation due to incessant reduction of number of available discrete energy levels in the bandgap of 4H-SiC substrate and lesser number of interface states density at Ni/4H-SiC (0 0 0 1) interface.     

Structural,optical and electrical properties of undoped and Si-doped AlxGa1−xN thin films on Si (1 1 1) substrate grown by PA-MBE

We have studied the structural properties of undoped and Si-doped Al_xGa_1?xN/GaN/AlN on Si (1 1 1) substrate prepared by plasma-assisted molecular beam epitaxy (PA-MBE) using high-resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM). In comparison with undoped AlGaN, the roughness and dislocation density on the surface of the AlGaN layer decrease with Si doping. Full width half maximum (FWHM) of the undoped and Si-doped samples were equal to 0.69° and 0.52°, respectively. This indicates that the Si doping improves the crystalline quality of the Al_xGa_1?xN layer compared with the undoped one. Raman scattering measurement reveals that the optical phonon modes of A₁(LO) and E₂(H) of the AlGaN show a one-mode and two-modes behavior, respectively. The Fourier-transform infrared reflectance (FTIR) investigation confirms the one-mode (two-mode) behavior of the LO (TO) phonon in our samples. This is in good agreement with Raman measurement. Finally, the barrier height (Φ_B) of undoped and Si-doped Al_xGa_1?xN samples was found to be 0.86 and 0.74 eV, respectively.     

Dynamic Monte Carlo simulation of film–substrate interface mixing in the deposition of Co on Cu (001)

Dynamic Monte Carlo simulations are performed to investigate the interface mixing of Co atoms deposited on a Cu (001) substrate. A tight-binding potential was used to determine the input parameters (jump probabilities and energy barriers) for the Dynamic Monte Carlo model. The results show that more Co adatoms penetrate into the substrate as the temperature rises and/or as the deposition rate decreases, and that the intermixing between the layers becomes concomitantly more pronounced. Cu atoms migrating into the Co layer via exchange processes during the growth of consecutive Co layers are proposed to be responsible for the intermixing. Furthermore, an initial Co clustering followed by a layer-by-layer growth mode was observed in the simulations, with the surface concentration of Cu atoms depending on the fraction of migrating Cu atoms and decaying into the Co film following a power law. The fraction of Cu atoms migrating into the Co layer can be adjusted by varying the deposition rate and the substrate temperature.     

Inter-cell spectrum efficiency improvement technology

Improvement in inter-cell spectrum efficiency is a valuable research topic in mobile communication system, which affects cell edge user experience especially. According to current research results, there are three methods to deal with inter-cell interference to improve inter-cell spectrum efficiency, including inter-cell interference randomization, inter-cell interference cancellation and inter-cell interference coordination. This paper analyzes three important inter-cell spectrum efficiency improvement technologies, soft frequency reuse (SFR), uplink power control, and downlink coordinated multi-point transmission/reception (CoMP), and relative research progress.