Numerical modeling of thermally-stimulated currents for the density-of-states determination in thin-film semiconductors

The paper reports on thermally stimulated conductivity studies used for characterization of the density of states profile in thin film semiconductors, by numerically solving the non-linear time-dependent rate equations for free and trapped charge. We explore the derivation of energy and density scales from temperature and conductivity data. We examine the distinction between ‘strong’ and ‘weak’ re-trapping and the use of low ‘effective’ values of attempt-to-escape frequencies in establishing an energy scale, and the ad hoc inclusion of a temperature-dependent lifetime. It is confirmed for several illustrative model systems that the technique can afford surprisingly good fidelity in recovery of the density of states under a range of conditions.     

Manufacturing lead-time rules: Customer retention versus tardiness costs

Inaccurate production backlog information is a major cause of late deliveries, which can result in penalty fees and loss of reputation. We identify conditions when it is particularly worthwhile to improve an information system to provide good lead-time information. We first analyze a sequential decision process model of lead-time decisions at a firm which manufactures standard products to order, and has complete backlog information. There are Poisson arrivals, stochastic processing times, customers may balk in response to quoted delivery dates, and revenues are offset by tardiness penalties. We characterize an optimal policy and show how to accelerate computations. The second part of the paper is a computational comparison of this optimum (with full backlog information) with a lead-time quotation rule that is optimal with statistical shop-status information. This reveals when the partial-information method does well and when it is worth implementing measures to improve information transfer between operations and sales.     

Ionic amorphous oxide semiconductors: Material design,carrier transport,and device application

Recently we have reported the room temperature fabrication of transparent and flexible thin film transistors on a polyethylene terephthalate (PET) film substrate using an ionic amorphous oxide semiconductor (IAOS) in an In₂O₃–ZnO–Ga₂O₃ system. These transistors exhibit a field effect mobility of ∼10 cm² (V s)⁻¹, which is higher by an order of magnitude than those of hydrogenated amorphous Si and pentacene transistors. This article describes a chemical design concept of IAOS, and its unique electron transport properties, and electronic structure, by comparing them with those of conventional amorphous semiconductors. High potential of IAOS for flexible electronics is addressed.     

Optical spectroscopy of a-As2Se3 under in situ laser irradiation

We report the first in situ dynamic measurements of the optical spectrum in the complete visible region of the electromagnetic spectrum to assess the kinetics of photodarkening in chalcogenide glass films. Only through such measurements, we find limitations of the commonly used Swanepoel method for determining the optical characteristics of such films. A negative change in the refractive index of a-As₂Se₃ films is observed at wavelengths longer than the wavelength of the inducing light beam. The observation of transmission spectrum as a function of time indicates that the photodarkening and photoexpansion have different origins.     

Photoprogrammable molecular hybrid materials for write-as-needed optical devices

The application of photosensitive materials to provide immediately configurable optical device functionality in integrated photonic systems has motivated an examination of the unique materials requirements associated with this alternative operational mode. In this case, a reliable photoinduced index change is needed when photopatterning under non-laboratory conditions utilizing compact, integrable optical sources. Molecular hybrid thin films, based on inorganic, Group IVA linear-chain polymers, are investigated in terms of excitation (writing) wavelength tuning through molecular modification and the influence of environmental conditions and thermal history on the photosensitive response observed. In general, a significant photoinduced refractive index change (with magnitude greater than 10⁻² at 632.8 nm) is found to be retained as the lowest energy absorption band (associated with the Group IVA conjugated backbone structure) is shifted with changes in side-group identity and backbone composition. In addition, the photosensitive response of a representative polysilane composition (poly[(methyl)(phenyl)silylene]) is observed to be strongly dependent on the local atmospheric composition during photoexposure, a key issue in the effective in-situ patterning of optical structures.     

Synthesis and properties of the nanocomposite of zink oxide and poly(amic acid)

The composite comprised of zinc oxide quantum dots and poly(amic acid) (PAAc) was prepared and studied by X-rays diffraction, X-ray photoelectron spectroscopy, light scattering, UV absorbance and UV fluorescence. The UV absorbance of the ZnO/PAAc composite was found to be much larger than that of its components taken separately. The fluorescence of the ZnO/PAAc composite was found to be shifted to longer wavelengthes in comparison with pure ZnO. The presence of the dopant dodecylbenzenesulfonic acid was found to affect the observed fluorescence.     

Band bending at the Ni/Si(100)-2×1 submonolayer interface

Band bending at the Ni/Si(100)-2×1 interface has been monitored by using Si 2p core level photoemission spectra. Two nickel-induced Si 2p components appear in the initial interaction between Ni and Si(100)-2×1, which is confined at the top surface and the first subsurface layers. At Ni coverage less than 0.0375 ML, Ni atoms prefer the adamantane interstitial sites on the first subsurface, but switch to the pedestal sites on Si dimer rows at higher Ni coverage. The change in the preferred occupation sites of Ni atoms on the Si(100)-2×1 surface strongly affects the amount of band bending shift. The shift towards higher binding energy, when Ni atoms occupy the adamantane interstitial sites, is attributed to metal-induced-gap states. While Ni atoms occupy the pedestal sites, the band bending shift is reduced which is attributed to the passivation of surface states.     

Reaction of C3 and C4 ketoses with alkenals and alkenones in water

Treatment of 1,3-dihydroxyacetone and acrolein with aqueous KOH gave a tetrahydrofuran derivative, 1,4-dihydroxy-3,7-dioxabicyclo[3.3.0]octane, in 80% yield. Similarly, 6-alkyl substituted 1,4-dihydroxy-3,7-dioxabicyclo[3.3.0]octanes were obtained by reaction of 1,3-dihydroxyacetone with various α,β-unsaturated aldehydes. In the cases of long chain alkenals, the reaction was effectively accelerated in the presence of organic co-solvent. On the other hand, the corresponding tricyclic products were synthesized by reaction of 1,3-dihydroxyacetone with cyclic enones, such as 2-cyclopentenone and 2-cyclohexenone. This method was successfully applied to the reaction of a tetrulose in the absence of any protecting groups.     

Radiotracer studies of the antitumor metallocene molybdocene dichloride with biomolecules

Neutron irradiation of Cp₂MoCl₂ for 24 h afforded the radiotracer Cp₂⁹⁹MoCl₂ which was characterised by UV–Vis spectroscopy and thin layer chromatography. Binding experiments with the thiol containing protein human serum albumin (HSA) or calf thymus DNA, were monitored for ⁹⁹Mo using a gamma counter. Under the conditions investigated, molar ratios of binding of 0.2:1 (Cp₂MoCl₂:DNA) and 9.4:1 (Cp₂MoCl₂:HSA) were calculated. The results are consistent with in vitro coordination studies that have shown strong preferential interaction of Cp₂MoCl₂ with thiols versus other donor sites in biomolecules including DNA.