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41.
In this paper, we study the electronic band structure and the ferromagnetic properties of the organic radicalp-NPNN by employing density-functional theory with generalized gradient approximation (GGA) and local-spin densityapproximation (LSDA). The density of states, the total energy, and the spin magnetic moment are calculated. Thecalculations reveal that the δ-phase of p-NPNN has a stable ferromagnetic ground state. It is found that an unpairedelectron in this compound is localized in a single occupied molecular orbital (SOMO) constituted primarily of π* (NO)orbitals, and the main contribution of the spin magnetic moment comes from the π* (NO) orbitals. By comparison, wefind that the GGA is more suitable to describe free radical systems than LSDA. 相似文献
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HL-2A tokamak, the first tokamak with divertor in China, has been constructed and put into operation in 2002. The main parameters are R=1.65 m, a=0.4 m, BT=2.8 T, Ip = 0. 48 MA. The divertor of HL-2A is unique, because it is characterized with a large closed divertor chamber. The device has double divertor chamber, but now it is operating with lower single null configuration to study the physics of divertor for the next step design of a divertor. Supersonic molecular beam injection (SMBI) system with LN2 cooling trap was first installed and demonstrated on the HL-2A tokamak in 2004. The first results of SMBI into HL-2A plasma are to demonstrate the function of the HL-2A divertor and to observe the cold pulse propagation during multi-pulse SMBI on HL-2A Tokamak. 相似文献
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QiaoHongYAO FuYouLI LuSHAN ChunHuiHUANG DongDongYIN 《中国化学快报》2003,14(11):1185-1188
A new photoresponsive D-π-A dye, mPS, has been designed and synthesized.Compared to the parent dye PS, IPCE values in the region from 400 nm to 560 nm was greatly improved upon changing the attaching group from the p- position to the o- position of the π-conjugation bridge. A solar cell based on mPS generated a remarkably high overall yield η of 5.4% under irradiation of 80.0 mW cm^-2 white light from a Xe lamp, Compared with PS, the overall yield η increased by 64%. 相似文献
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利用相位共轭技术补偿光纤中色散效应的条件 总被引:1,自引:0,他引:1
利用相位共轭器的频率反转特性的,补偿光纤中的色散效应,在理论上和实验上得到了证明.由色散脉冲的傅里叶交换确定了光纤中二次色散效应可以被忽略的条件,得到了共轭器的反射率和带宽与非线性介质的长度L,参数|K|L之间的关系曲线,找到了影响补偿效果的主要因素. 相似文献
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Pinning effect of lead lanthanum titanate (PLT) ferroelectric thin films with excess PbO of 20 mol% has been studied for deposition on diffe rent substrates. Silicon, sapphire and quartz were used as substrates on which P t/Ti or LaNiO3 thin films were deposited as bottom electrodes. Electron probe analysis results showed that there was still a certain amount of excess Pb in PLT films after annealing at 550 ℃ for 1 h, and the amount of it was dependent on the substrate used. The distribution of excess Pb in the films was investig ated by Auger electron spectroscopy depth profile. It was shown that the substrates and the bottom electrodes had significant effects on the content and distrib ution of excess Pb in PLT films. The excess Pb and its accumulation at the inter face between the film and bottom electrode may act as pinning centers and have a pinning effect on domains, which can be observed by abnormal P-E hysteresis loops and abnormal C-V curves. The excess Pb content in the films and the accumulation of Pb at the interface were high in PLT films deposited on Pt/Ti/S i, and considerable pinning effect was observed. As LaNiO3 would absorb most part of the excess Pb in PLT films, the content of excess Pb in the films deposited on LaNiO3/Si was very low and the pinning effect was hardly observed. 相似文献
50.
Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates using a GaN Intermedial Layer 下载免费PDF全文
GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/Si(111) substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional (3D) mode to the 2I) one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy (TEM) measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer. 相似文献