(Na1/2Bi1/2)Cu3Ti4O12陶瓷的微观结构和电学性质

利用固相反应法在不同烧结温度条件下制备了一系列(Na_1/2Bi_1/2)Cu₃Ti₄O₁₂(NBCTO)陶瓷样品,研究了它们的晶体结构、微观组织结构、介电性质和复阻抗及其随温度的变化. 实验发现NBCTO陶瓷所呈现出的电学性质与CaCu₃Ti₄O₁₂陶瓷相应的电学性质非常类似. 烧结温度为990℃至1060℃范围的NBCTO陶瓷样品室 关键词： 高介电材料 介电性质 复阻抗 内阻挡层电容     

Nd3+:Gd3Sc2Al3O12 晶场能级及拟合

Nd³⁺ :GSAG是性能优良的942 nm激光晶体.用提拉法成功生长Nd³⁺ :GSAG单晶,研究其室温透射光谱,辨认位置高达29967 cm^-1的68个Nd³⁺晶场能级.对这些能级拟合了自由离子及晶场Hamilton参量,拟合标准偏差为16.7 cm^-1,表明实验与计算能级符合很好.获得的Hamilton参量可用于计算Nd³⁺ :GSAG中Nd³⁺的     

脉冲激光频域干涉技术在超快动力学物理中的应用

介绍了一种具有fs时间分辨力的超短脉冲激光频域干涉测试技术,详细论述了该技术的工作原理和系统构成,指出传输时间差和相位差是影响频域干涉条纹周期的主要因素。采用脉冲激光频域干涉仪测量了200 nm厚度铝膜在波长800 nm、单脉冲能量0.7 mJ、脉宽35 fs脉冲激光作用下的运动速度剖面。在单次飞秒脉冲激光作用下,铝膜自由面的运动速度峰值可达960 m/s,速度剖面的上升前沿小于5.77 ps,表明脉冲激光频域干涉技术可用于测量材料在超快脉冲激光作用下的冲击动力学参数。     

温度对潜望式激光通信终端SiC反射镜性能影响

分析了温度梯度和均匀温度对潜望式激光通信终端反射镜形变的影响,利用椭圆域上的Zerni-ke多项式对椭圆反射镜的波前进行拟合,计算由于热形变导致的波前畸变误差,给出了星间激光通信终端反射镜均方根值、发射光束瞄准误差、接收端光强随温度梯度和均匀温度的变化关系。结果表明:温度梯度对反射镜的影响只是引起峰值光强的漂移和少许下降,当温度梯度为14℃/m时瞄准误差达2.1μrad。均匀温度会引起接收端的光强分布变化,从而导致很大的瞄准误差和光强衰减,当均匀温度与参考温度的差值小于0.6℃时,由波前畸变误差引起的瞄准误差小于1μrad,当差值大于0.6℃时,瞄准误差突然增大到几μrad,接收端光强分布发生变化,此时反射镜热形变引起的像散项对光强分布起重要作用。     

激磁电感对直线变压器输出波形顶降的影响

 从理论上分析了激磁电感对直线变压器驱动源输出脉冲波形顶降的影响,使用Pspice软件对理论计算结果进行了模拟验证。理论计算和模拟分析的结果均表明：激磁电感越小,输出脉冲波形的顶降越明显。设计了50 A的偏磁电路并进行了实验,在重复频率为20 Hz时直线变压器驱动源工作稳定,输出脉冲波形前沿约35 ns,平顶约130 ns,幅值约125 kV。与未加偏磁电路的实验结果相比,顶降明显减小（小于5%）,实验结果与理论计算和模拟分析结果基本一致。     

化学发光法测定甲萘威

在NaOH介质中,铁氰化钾氧化鲁米诺产生化学发光,甲萘威对该发光反应有较强的抑制作用且抑制发光强度与甲萘威的浓度呈较好的线性关系,基于此性质建立了测定甲萘威的新方法。在实验的优化条件下,测定甲萘威的检出限为5.5×10-11mol.L-1,线性范围为1.5×10-10—4.0×10-8mol.L-1,对5.0×10-9mol.L-1甲萘威进行了11次平行测定,其RSD为1.74%。该法用于合成样品中甲萘威的测定,结果令人满意。     

奥扎格雷对蘑菇酪氨酸酶的抑制动力学

抗血小板凝聚药奥扎格雷不仅抑制酪氨酸酶单酚酶活性,而且对二酚酶具有很强抑制。导致单酚酶活力和二酚酶活力下降50%的奥扎格雷浓度(IC50)分别为1.35mmol/L和3.45mmol/L。奥扎格雷对单酚酶的抑制效应主要表现于酶催化反应的延滞时间有明显的延长。奥扎格雷对二酚酶的抑制作用表现为可逆的竞争性和非竞争性混合型抑制。     

Synthesis and Luminescent Properties of Lanthanide Complexes with Structurally Related Novel Multipodal Ligands

To explore the relationship between the structure of the ligands and the luminescent properties of the lanthanide complexes, a series of lanthanide nitrate complexes with two novel structurally related multipodal ligands, 1,3-bis{[(2’-(2-picolylaminoformyl))phenoxyl]methyl}benzene (L ^I ) and 1,2-bis{[(2’-(2-picolylaminoformyl))phenoxyl]methyl}benzene (L ^II ), have been synthesized and characterized by elemental analysis, infrared spectra and molar conductivity measurements. At the same time, the luminescent properties of the Eu(III) and Tb(III) nitrate complexes in solid state and the Tb(III) nitrate complexes in solvents were investigated at room temperature. Under the excitation of UV light, these complexes exhibited characteristic emissions of central metal ions. The lowest triplet state energy levels T₁ of these ligands both match better to the lowest resonance energy level of Tb(III) than to Eu(III) ion. The influence of the structure of the ligands on the luminescent intensity of the complexes was also discussed.     

The high squeezing and entanglement in regular loss modulated optical parametric amplifier

We investigate the quantum fluctuation characteristic for time dependent regular loss modulated optical parametric amplifier for below and above threshold regions.It is found that a high squeezing and entanglement can be achieved.     

The physical process analysis of the capacitance-voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors

This paper deduces the expression of the Schottky contact capacitance of AlGaN/AlN/GaN high electron mobility transistors (HEMTs), which will help to understand the electron depleting process. Some material parameters related with capacitance-voltage profiling are given in the expression. Detailed analysis of the forward-biased capacitance has been carried on. The gate capacitance of undoped AlGaN/AlN/GaN HEMT will fall under forward bias. If a rising profile is obviously observed, the donor-like impurity or trap is possibly introduced in the barrier.