Polygonization in high-purity rolled (001)[110] tungsten single crystals

Electron microscopy is used to study changes in the dislocation structure of high-purity rolled (001)[110] tungsten single crystals during short-term high-temperature annealings. The effects of the annealing temperature and time on the formation of low-angle boundaries are investigated. Local defects, which are similar to those detected earlier upon annealing in the structure of molybdenum single-crystal ribbons, are found to form and dissociate upon annealing. These defects are concluded to have a dislocation nature.     

Use of ultrafine-dispersed nanodiamond for selective deposition of boron-doped diamond films

A suspension of ultrafine-dispersed nanodiamond was used for introducing (in particular, selectively) high-density centers of diamond nucleation on various substrates. High-quality doped diamond films to be used as electrochemistry electrodes were deposited from the gas phase in a microwave discharge on certain substrates treated using ultrafine-dispersed nanodiamond. A uniform distribution of nucleation centers with concentrations greater than 10¹⁰ cm^-2 on silicon substrates was obtained. Electrochemical current-potential curves were measured for continuous films. Diamond meshes of different transparency were grown using selective nucleation. Successful production of high-quality doped diamond meshes gives grounds to consider them the most promising electrodes for use in electrochemistry.     

Distribution of a local magnetic field in superconductors with an uncorrelated random lattice of abrikosov vortices

The distribution of a local magnetic field near the surface of a uniaxial anisotropic type-II superconductor is determined in the framework of the London model in the case when the Abrikosov vortices are randomly distributed in the superconductor. The distribution of a local magnetic field is obtained as a function of the distance from the surface of the superconductor. It is demonstrated that the shape of the distribution of the local magnetic field near the surface differs substantially from that in the bulk of the superconductor. This difference should be taken into account in interpreting experimental data on the local magnetic field in the surface region of the superconductor and in thin superconducting films (with a thickness of less than or equal to λ, where λ is the depth of penetration of the magnetic field into the superconductor). It is shown that, as in the case of a regular lattice of vortices, the value of λ can be determined from observations of the distribution of the local magnetic field in type-II superconductors with an uncorrelated random lattice of vortices.     

Nonequilibrium dynamics of quantum spin glass in an AC magnetic field

The ageing effect is studied analytically in a disordered quantum system interacting with its surroundings and subjected to an external ac magnetic field. Energy dissipation is due to the interaction of the system with a set of independent harmonic oscillators, imitating a quantum thermal bath. Dynamic equations for the autocorrelation function and linear-response function are derived using the method of closed-path integrals. The effect of an external field is studied on the correlation function and response in the spin-glass and paramagnetic phases. Both functions are found to depend on the spin interaction strength.     

Threshold character of the magnetoplastic effect in twinning of bismuth crystals

It is found that, when a bismuth crystal is subjected simultaneously to concentrated loading and a dc magnetic field, the magnetoplastic effect manifests itself as an abrupt decrease in the average length of wedge twins on the (111) cleavage plane (and, hence, as a decrease in the total twinned volume of the crystal) as a threshold value of the magnetic field is reached. However, the magnetic field stimulates glide deformation, which is indicated by an increase in the size of dislocation rosettes. The microhardness of a crystal varies smoothly and tends to increase with increasing magnetic field. The last phenomenon is accounted for by hardening of the crystal under the indenter in the presence of a magnetic field, because several slip systems become operative.     

Chain decay of low-angle tilt boundaries in nanocrystalline materials

In terms of two-dimensional dislocation-disclination dynamics, a theoretical model is developed to describe the decay of a low-angle tilt boundary in a deformed nanocrystalline material under the action of an externally applied elastic stress and of the elastic field of a neighboring decayed boundary. The critical external stresses are calculated at which the boundary decays and the dislocations making up this boundary either are trapped by the boundary that decayed earlier or break away from both boundaries. The decay of a low-angle tilt boundary is shown to result in a substantial decrease in the critical decay stresses for the neighboring boundaries, which can cause an avalanche-like chain decay of low-angle boundaries yielding high-density ensembles of mobile dislocations capable of carrying substantial plastic deformations and of forming shear bands in deformed nanocrystalline materials.     

Modification of the physical properties of chemical vapor-deposited nanostructure diamond by argon-hydrogen plasma surface treatment

Nanostructure diamond (NSD) film with a hardness as high as 70 GPa and an average surface roughness of 10 nm has been synthesized by the two-step negative substrate bias method combined with post-growth Ar-H₂ plasma irradiation. The Ar-H₂ plasma irradiation has been confirmed to improve the uniformity of grain size and shape and increase the hardness of the NSD film.     

The conduction current in a metal-insulator-metal structure

The flow of the conduction current in a metal-insulator-metal structure under X-ray and optical excitation is considered. Accumulation of positive charge at the negative electrode in the KBr and CsI crystals is studied. The method of discharge currents after the X-ray and optical excitation is suggested for estimation of the near-surface charge. It is shown that the values of charge transported by the conduction current and those determined from the measured discharge-current signal are in satisfactory agreement. The lifetimes of near-surface charges of holes and anionic vacancies and the values of the electric-field strength at the metal-insulator interface are estimated. It is assumed that electroneutrality of the sample is established owing to the motion of electrons from the surface into the bulk over dislocations.     

Exact value of conjugate ion current in an electrolyte in the Gurevich-Kharkats diffusion-migration model

The exact solution of the problem of ion transport current in an electrolyte in the presence of a conjugate flow of solvent is obtained in the framework of the one-dimensional Gurevich-Kharkats diffusion-migration model; the conditions for the existence of the solution are analyzed.     

Investigation of the X-ray radiation produced by a diffusive discharge in the rod-plane geometry under atmospheric pressure

Spatial parameters of the X-ray radiation produced by a high-voltage nanosecond discharge evolving in air under atmospheric pressure in the rod (cathode)-plane electrode system with a 10-cm electrode spacing are studied experimentally. A ∼170-ns voltage pulse with an amplitude of ∼200 kV and 10-ns rise time is applied to the cathode. The photoelectronic method is used to study, under the same conditions, the integrated (over the gap) characteristics of the radiation, in particular, the duration of its generation. It is found that, when the size of the X-ray source is not smaller than that of the discharge region of diffusive luminescence, radiation from the cathode region of the gap is primarily observed (i.e., from the region where the electric field distribution is sharply inhomogeneous). The X-ray generation is usually observed after the bridging of the discharge gap, the X-ray pulse having a rise time of ∼3 ns, a duration of ∼10 ns, and an effective radiation energy of ∼6 keV.