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Use of ultrafine-dispersed nanodiamond for selective deposition of boron-doped diamond films |
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| Authors: | V V Dvorkin N N Dzbanovskii A F Pal’ N V Suetin A Yu Yur’ev P Ya Detkov |
| Institution: | (1) Skobel’tsyn Research Institute of Nuclear Physics, Moscow State University, Vorob’evy gory, Moscow, 119992, Russia;(2) Troitsk Institute for Innovation and Thermonuclear Research, Troitsk, Moscow oblast, 142190, Russia;(3) Russian Federal Nuclear Center, All-Russia Zababakhin Research Institute of Technical Physics, Snezhinsk, Chelyabinsk oblast, 456770, Russia |
| Abstract: | A suspension of ultrafine-dispersed nanodiamond was used for introducing (in particular, selectively) high-density centers of diamond nucleation on various substrates. High-quality doped diamond films to be used as electrochemistry electrodes were deposited from the gas phase in a microwave discharge on certain substrates treated using ultrafine-dispersed nanodiamond. A uniform distribution of nucleation centers with concentrations greater than 1010 cm-2 on silicon substrates was obtained. Electrochemical current-potential curves were measured for continuous films. Diamond meshes of different transparency were grown using selective nucleation. Successful production of high-quality doped diamond meshes gives grounds to consider them the most promising electrodes for use in electrochemistry. |
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