Fabrication of Micro -Optical Devices by a Femtosecond Laser

Femtosecond laser is a perfect laser source for materials processing when high accuracy and small structure size are required. Due to the ultra short interaction time and the high peak power, the process is generally characterized by the absence of heat diffusion and, consequently molten layers. Various induced structures have been observed in materials after the femtosecond laser irradiation. Here, we report on fabrication of micro-optical devices by the femtosecond laser. 1) formation of optical waveguide with internal loss less than 0.5dB/cm in the wavelength region from 1.2 to 1.6 mm, by translating a silica glass perpendicular to the axis of the focused femtosecond laser beam; 2) nano-scale valence state manipulation of active ions inside transparent materials; 3) space-selective precipitation and control of metal nanoparticles inside transparent materials; The mechanisms and applications of the femtosecond laser induced phenomena were also discussed.     

氧氟沙星和左氟沙星与人血清白蛋白的相互作用研究

用光谱技术研究了水溶液中氧氟沙星(OFLX)和左氟沙星(LVFX)与人血清白蛋白相互作用的机制.荧光猝灭法测得的结果表明反应的结合常数为KOFLX＝0.482×105L@mol-1,KLVFX=0.529×105L@mol-1,结合位点数nOFLX＝0.72,nLVFX=0.74.按照Fōorster非辐射能量转移理论得到药物-蛋白之间的结合距离分别为rOFLX=2.94nm,nVFX=2.85 nm.实验结果说明OFLX与LVFX在体内与蛋白结合直到运输到受体部位这一环节基本相同.     

变In组分沟道的MM-HEMT材料电子输运特性研究

在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用.通过低温下二维电子气横向电阻的量子振荡现象，结合变温度的Hall测量，系统研究了不同In组分沟道MM_HEMT器件中子带电子迁移率和浓度随温度的变化关系.结果表明，沟道中In组分为0.65的样品，材料电学性能最好，In组分高于0.65的样品，严重的晶格失配将产生位错，引起迁移率下降，大大影响材料和器件的性能. 关键词： 变缓冲层高迁移率晶体管 Shubnikov_de Hass 振荡     

超短强激光脉冲在等离子体隧道中传输的理论与数值模拟研究

研究了超短强激光脉冲在非扰动抛物型部分电离的预等离子体隧道中的传输特性.从Maxwell方程出发得到了两个包含衍射、三阶强度非线性、等离子体散焦、等离子体隧道聚焦以及相对论自聚焦等效应在内的激光场演化方程，即折射率方程和哈密顿-雅可比方程.在此基础 上得到了激光在等离子体隧道中传输的包络方程以及光斑半径与传输距离、隧道宽度等初始 参量的关系. 关键词： 等离子体隧道聚焦 相对论自聚焦 势阱     

Photonic crystals--a step towards integrated circuits for photonics.

The field of photonic crystals has, over the past few years, received dramatically increased attention. Photonic crystals are artificially engineered structures that exhibit a periodic variation in one, two, or three dimensions of the dielectric constant, with a period of the order of the pertinent light wavelength. Such structures in three dimensions should exhibit properties similar to solid-state electronic crystals, such as bandgaps, in other words wavelength regions where light cannot propagate in any direction. By introducing defects into the periodic arrangement, the photonic crystals exhibit properties analogous to those of solid-state crystals. The basic feature of a photonic bandgap was indeed experimentally demonstrated in the beginning of the 1990s, and sparked a large interest in, and in many ways revitalized, photonics research. There are several reasons for this attention. One is that photonic crystals, in their own right, offer a proliferation of challenging research tasks, involving a multitude of disciplines, such as electromagnetic theory, nanofabrication, semi-conductor technology, materials science, biotechnology, to name a few. Another reason is given by the somewhat more down-to-earth expectations that photonics crystals will create unique opportunities for novel devices and applications, and contribute to solving some of the issues that have plagued photonics such as large physical sizes, comparatively low functionality, and high costs. Herein, we will treat some basics of photonic crystal structures and discuss the state-of-the-art in fabrication as well give some examples of devices with unique properties, due to the use of photonic crystals. We will also point out some of the problems that still remain to be solved, and give a view on where photonic crystals currently stand.     

Effect of Ultrashort Pulsed Laser and X-Ray Irradiation on Au+ -Doped Glass

Au nanoparticles were precipitated inside Au+-doped glass samples after irradiation by femtosecond laser or x-ray. Femtosecond laser and X-ray irradiation result in decreasing of anneal temperature and critical size for the precipitation of Au nanoparticles.     

低温功率器件驱动电路实验研究

低温电力电子技术的发展日益得到重视,主要是由于功率器件(如功率MOSFET和IGBT等)在低温下表现出更好的性能,如更低的通态阻抗,更高的开关频率等.为了实验测试和充分利用功率器件在低温下的这些性能,急需寻找或设计可以在低温下稳定可靠工作的功率器件驱动电路.我们在对目前商业化的驱动芯片进行分析的基础上,从中挑选了三种在低温下进行实验,对其输出波形随温度的变化进行研究,首次发现了可以在-196℃(77K)稳定工作的驱动芯片,其驱动性能基本能够满足低温下驱动功率器件的要求,为功率器件低温特性测试及低温功率变换电路的设计奠定了坚实的基础.     

CONE-DIRECTED CONTINGENT DERIVATIVES AND GENERALIZED PREINVEX SET-VALUED OPTIMIZATION

By using cone-directed contingent derivatives, the unified necessary and suffi-cient optimality conditions are given for weakly and strongly minimal elements respectively in generalized preinvex set valued optimization.