三种胺羧配合物的113Cd NMR研究

该文对Cd-HEDTA(N-(2-羟基乙基)乙二胺-N',N',N'-三乙酸),Cd-PDTA(1,2丙二胺四乙酸)和Cd-DTPA(二乙三胺五乙酸)的¹¹³Cd NMR谱和自旋晶格弛豫时间T₁,及NOE因子进行了研究.结果表明,Cd-HEDTA和Cd-PDTA结构与Cd-EDTA类似,Cd-PDTA双线归因于其可能的两种异构体.Cd-DTPA大的化学位移表明其具有七配位的五角双锥结构.在这种结构中DTPA可用三个氮原子参加配位.对¹¹³Cd自旋晶格弛豫时间分析表明,Cd-DTPA配合物中质子偶极作用机理的贡献较大,这归因于Cd DTPA有更多的乙酸根亚甲基质子参与偶极作用.     

Browder-Petryshyn 型的严格伪压缩映射的粘滞迭代逼近方法

主要研究Browder-Petryshyn型的严格伪压缩映射的粘滞迭代逼近过程,证明了Browder-Petryshyn型的严格伪压缩映射的不动点集F(T)是闭凸集．在q-一致光滑且一致凸的Banach空间中,对于严格伪压缩映射T,利用徐洪坤在2004年引进的粘滞迭代得到的序列弱收敛于T的某个不动点．同时证明了Hilbert空间中Browder-Petryshyn型的严格伪压缩映射的相应迭代序列强收敛到T的某个不动点,其结果推广与改进了徐洪坤2004年的相应结果．     

Analysis method of the effect of fabrication errors on a planar waveguide demultiplexer

The impact of fabrication errors on a planar waveguide demultiplexer is analyzed based on an analytical method. The explicit expression of the transfer function taking into account phase and amplitude errors is presented in order to analyze the loss and crosstalk of the demultiplexer caused by fabrication errors. A basic requirement for the demultiplexer with a certain crosstalk criterion can be easily obtained. Using an etched diffraction grating demultiplexer as an example, it is shown that the analytical results have a good agreement with results from a numerical method.     

凸体的曲率映象与仿射表面积

本文研究了一些特殊凸体与其极体的曲率仿射表面积乘积的下界.对任意两个凸体,建立了它们的投影体的混合体积与其仿射表面积的一个不等式（见文[1-15]）.     

区间数互补判断矩阵的拓扑排序方法

提出了方案之间进行比较时优于与劣于的定义,通过构造与区间数互补判断矩阵相对应的有向图的方法,将互补判断矩阵的排序问题转化为有向图中顶点的拓扑排序问题,将有向图中的顶点按照备选方案的重要性顺序输出,得到的顶点的序列即为备选方案的重要性排序,数值计算实例验证了该方法的有效性与可行性。     

High-density plasma etching of indium-zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl₂-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH₄/H₂/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl₂ discharges is smooth, whereas that after etching in CH₄/H₂/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH₄/H₂/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH₄/H₂/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.     

中物院远红外自由电子激光实验研究

中国工程物理研究院基于射频直线加速器技术的远红外自由电子激光(FIR-FEL)实验取得阶段性进展,于2005年3月24晚8时30分首次出光, 并多次重复. 中心波长115μm, 谱宽1%.介绍了实验系统的主要组成部分和主要实验结果.     

A scheme for teleporting Schrdinger-cat states via the dispersive atom-cavity-field interaction

A proposal is presented for teleporting Schrding-cat states. The process of the teleportation is achieved through the dispersive atom-cavity-field interaction. In this proposal, only measurement on the cavity field and on the singlet atomic states are used.