The simulation of dendrite growth and partial discharges in epoxy resin

A self-consistent model of the development of dendrites and partial discharges in a dielectric solid under a variable voltage is suggested. Dendrites originate at sites with the enhanced local field strength and also where the dielectric is broken down under the action of partial discharges. The numerical simulation is used to quantitatively describe the space-time dynamics of the dendrites and partial discharges in epoxy resin for the tip-plane electrode configuration. The simulated data are compared with electrical measurements of partial discharges and with optical images of dendrite growth under the same conditions.     

Development of high-speed video cameras for Dynamic PIV

The most promising next generation Image Velocimtry (IV) is the high-speed Dynamic PIV. It requires the development of innovative high-speed video camera sensors. We started by specifying the required performance of these new sensors, for measurements in air and water flows. These criteria founded on the most recent developments in PIV algorithms and incorporate results from a large questionnaire survey of users of high-speed video cameras in Japan. The results suggest that the followings are required: (1) frame rate of 1,000,000 fps, (2) pixel count of 1,000,000 pixels, (3) frame storage capacity of 100–200 frames for tracing a single event and 10,000 frames for turbulent measurements, (4) gray levels of 4–8 bits for PTV; 12 bits for observation. Finally, we reviewed the state of the art of high-speed video-image sensors. Currently the standard parallel-readout sensors can operate at 1 Kfps with a pixel count of approximately 1 Kpixels. The In-situ Storage Image Sensor (ISIS) developed by the authors has recently achieved frame rates of 1 Mfps.     

Switching kinetics of ferroelastic ferroelectrics

Switching kinetics of uniaxial ferroelastic ferroelectrics (FFs) in external electric and stress fields is studied using classical theory of nucleation and growth. The stage in which the polarization and deformation reversal involves the main body of the FF and the final stage (Ostwald ripening) of the FF switching are studied with allowance for the change in the repolarization and redeformation during the phase transition. The time dependences of the repolarization and redeformation are found, and equations are derived from which the polarization current and the deformation flux, as well as their time dependence, can be calculated. The calculated main characteristics of the FF switching are compared with the experimental data for switching of Rochelle salt single crystals.     

Thermal conductivity of GaS and GaSe layered semiconductors

This paper reports on the results of experimental investigations into the thermal conductivity of GaS and GaSe layered semiconductor crystals in directions parallel and perpendicular to the crystal layers in the temperature range 5–300 K. Specific features of the thermal conductivity of these crystals are analyzed.     

A planar XeCl-exilamp pumped by a low-pressure glow discharge

The energy characteristics of an XeCl exciplex lamp with planar construction pumped by a low-pressure gas discharge are investigated experimentally. When a discharge gap of width 2 cm and a Xe-Cl₂ mixture were used, average radiation powers up to 20 mW were obtained in the wavelength interval 200–380 nm at efficiencies of ∼0.4%. In this case the total efficiency of radiation into an angle of 4π exceeded 4%. It is shown that increasing the working pressure and using low discharge currents can lead to “point” radiation sources. Zh. Tekh. Fiz. 67, 43–46 (December 1997)     

The spin-S Blume-Capel RG flow diagram

Using the finite-size scaling renormalization group, we obtain the two-dimensional flow diagram of the Blume-Capel model forS=1 andS=3/2. In the first case our results are similar to those of mean-field theory, which predicts the existence of first- and second-order transitions with a tricritical point. In the second case, however, our results are different. While we obtain in theS=1 case a phase diagram presenting a multicritical point, the mean-field approach predicts only a second-order transition and a critical endpoint.     

The 2D Rancieite-type manganic acid and its alkali-exchanged derivatives: Part I — Chemical characterization and thermal behavior

The 2D Rancieite type manganic acid was prepared by reduction of KMnO₄ in acidic medium. Its ion exchange behavior allows to prepare alkali derivatives. All compounds were characterized with use of a combination of X-ray diffraction, chemical analyses, TGA, magnetic measurements and spectroscopic techniques. The evolution of their chemical composition versus temperature was studied between 180 and 400 °C. It shows that the dehydration process is partly reversible in these compounds whereas the weak reduction is irreversible. The 2D Rancieite-type manganic acid is readily different from a Birnessite-type phyllomanganate, as shown by several features: the interlayer distance, the ion exchange capacity, the thermal behavior, the interlayer cation content, the manganese average oxidation state, the magnetic behavior and the IR spectrum.     

The Efficiency Distribution Approach in Data Envelopment Analysis: An Application

A method is developed here for characterizing the empirical distribution of the efficient units in data envelopment analysis. Two empirical applications illustrate the various uses of the distribution approach. One involves the cost frontier which exhibits increasing returns to scale and the other involves a dynamic production frontier, where technological change causes a shift of the production frontier over time.     

Temperature Dependence of InSb Reflectivity in the Far Infrared: Determination of the Electron Effective Mass

We measured the dependence of the reflectivity of InSb crystals upon temperature in the submillimeter region using monochromatic radiation from an optically pumped far infrared (FIR) laser. The measures allowed us to determine the value of the electron effective mass at low temperatures with radiations of different frequencies. Our measurements extend the results obtained recently on pure crystals with magneto-optical methods to the low temperatures region where only old measures were available.     

Exciton states in In x Ga1−x As/GaAs double quantum wells: Normalized reflection spectra

Il Nuovo Cimento D - Normalized reflection spectra in GaInAs/GaAs quantum wells are shown for two sets of samples with different alloy concentration (x=9% and 18.5%) and well thickness ranging from...