3,5-二(2',5'-苯二羧酸)苯甲酸构筑的金属有机配合物的荧光识别及磁性

设计合成了3种新颖的金属有机配合物（MOCs）：{[Pb₂（HL）（phen）]·2H₂O}_n（1）,{[Ni（H₃L）（4,4''-bipy）_1.5（H₂O）₄]·6H₂O}_n（2）和{[Ni₂（HL）（1,4-bibb）（H₂O）]·（CH₃CN）·H₂O}_n（3）（H₅L=3,5-二（2'',5''-苯二羧酸）苯甲酸,phen=1,10-菲咯啉,4,4''-bipy=4,4''-联吡啶,1,4-bibb=1,4-二（苯并咪唑）苯）,并通过单晶X射线衍射、红外光谱（IR）、热重分析（TG）和粉末衍射对它们进行结构表征。结构分析表明1是基于[Pb₂（μ₂-COO）₂（μ₁-COO）₄]SBUs的一维链状结构;2是二维层状结构,其拓扑符号为{4.6²}₂{4².6².8²};3是一个3D网络结构,其拓扑符号为{6².8⁴}{6⁴.8²}₂。进一步研究了配合物荧光和磁性能。荧光检测显示,配合物1在水溶液中可以高灵敏识别Fe³⁺和Cr₂O₇^2-离子。同时研究了配合物1对Fe³⁺和Cr₂O₇^2-猝灭机理。磁性分析表明配合物3中的Ni（Ⅱ）离子之间存在反铁磁相互作用。     

气相色谱-质谱法测定纺织品中喹啉与异喹啉

建立了纺织品中喹啉和异喹啉的气相色谱-质谱检测方法。采用乙酸乙酯为溶剂,超声提取,经蒸发浓缩和定容后,以GC-MS测定。结果表明,喹啉和异喹啉在0.05～10.0 mg/L范围内线性良好(r0.999 0),回收率为82.0%～99.8%,相对标准偏差(n=6)为0.9%～3.8%;方法的定量下限为0.05 mg/kg。该方法灵敏度高、简便、高效、准确,可以满足纺织品中喹啉和异喹啉的检测需求。     

对硝基甲苯合成3,4-二甲基苯胺的研究

以对硝基甲苯为原料,经胺甲基化、水解、还原3步反应合成了目标化合物。通过单因素实验,分析每一步反应的关键影响因素,初步得到适宜的合成条件。最终产物的结构经核磁氢谱、质谱、元素分析进行确证,纯度经气相色谱分析。3,4-二甲基苯胺的总收率56.6%,纯度大于98.5%。该合成路线原料易得,成本较低,操作简单。     

单晶金刚石p型和n型掺杂的研究

超宽禁带半导体材料金刚石在热导率、载流子迁移率和击穿场强等方面表现出优异的性质,在功率电子学领域具有广阔的应用前景。实现p型和n型导电是制备金刚石半导体器件的基础要求,其中p型金刚石的发展较为成熟,主流的掺杂元素是硼,但在高掺杂时存在空穴迁移率迅速下降的问题;n型金刚石目前主流的掺杂元素是磷,还存在杂质能级深、电离能较大的问题,以及掺杂之后金刚石晶体中的缺陷造成载流子浓度和迁移率都比较低,电阻率难以达到器件的要求。因此制备高质量的p型和n型金刚石成为研究者关注的焦点。本文主要介绍金刚石独特的物理性质,概述化学气相沉积法和离子注入法实现金刚石掺杂的基本原理和参数指标,进而回顾两种方法进行单晶金刚石薄膜p型和n型掺杂的研究进展,系统总结了其面临的问题并对未来方向进行了展望。     

Laser frequency stabilization based on Sagnac interferometric spectroscopy

A simple method based on Sagnac interferometric spectroscopy (SIS) is applied for frequency stabilization of diode lasers. Sagnac interferometric spectra of rubidium vapor are investigated both theoretically and experimentally. The interference signal at the output of the Sagnac interferometer displays a sharp dispersion feature near the atomic resonance. This dispersion curve is used as the feedback error signal to stabilize the laser frequency. Linewidth of a diode laser is stabilized down to 1 MHz by this modulation-free method.     

紧凑型L波段同轴相对论返波振荡器的粒子模拟

 设计了紧凑型L波段同轴相对论返波振荡器，通过粒子模拟研究了L波段同轴相对论返波振荡器相互作用的物理过程，并对器件的电磁结构进行了优化和改进。分析表明，采用同轴慢波结构可以在较低的外加磁场下实现L波段返波振荡器的微波输出，同时可以大大减小微波器件的径向尺寸。这是因为同轴慢波结构的TM01模式有类似于TEM模的性质，没有截止频率，但纵向电场不为零，电子束能够与它发生强相互作用过程。粒子模拟优化结果表明，在器件半径仅为4.0 cm，电子束能量240 keV，电子束流1.8 kA，导引磁场仅为0.75 T时，返波振荡器可以在频率1.60 GHz处获得较大功率的微波输出， 平均峰值功率达140 MW，平均峰值功率效率约为32%。     

高等生物的遗传控制——从大豆mRNA处理的水稻后代种子内鉴别出大豆蛋白质

本文从大豆幼苗中分离出与poly A相连的RNA.将此RNA注入开花后的子房,并用此RNA处理水稻花药.处理过的花药经离体培养诱导出愈伤组织,再从愈伤组织诱导植株.通过免疫反应的实验发现,在上述两种处理过的后代种子中含有大豆的蛋白质,而对照无此蛋白.     

Ultracold two-component fermionic gases with a magnetic field gradient near a feshbach resonance

We study theoretically the ultracold two-component fermionic gases when a gradient magnetic field is used to tune the scattering length between atoms. For 6Li at the narrow resonance B0=543.25 G, it is shown that the gases would be in a coexistence of the regimes of BCS, Bose-Einstein condensation (BEC), and unitarity limit with the present experimental technique. In the case of thermal and chemical equilibrium, we investigate the density distribution of the gases and show that a double peak of the density distribution can give us a clear evidence for the coexistence of BCS, BEC, and unitarity limit.     

Tensegrity: construction of rigid DNA triangles with flexible four-arm DNA junctions

A tensegrity strategy has been explored to construct a rigid geometrical structure (triangles) from flexible DNA four-arm junctions. The resulting DNA triangles could self-assemble into 1D and 2D arrays. This tensegrity strategy is expected to play an important role in the design of biomimetic nanomaterials.     

Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy

We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content （55%） InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.