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101.
We discuss two methods by which high porosity silica aerogels can be engineered to exhibit global anisotropy. First, anisotropy can be introduced with axial strain (i.e. axial compression). In addition, intrinsic anisotropy can result during growth and drying stages and, suitably controlled, it can be correlated with preferential radial shrinkage in cylindrical samples. We have performed small angle X-ray scattering (SAXS) to characterize these two types of anisotropy. We show that global anisotropy originating from either strain or shrinkage leads to optical birefringence and that optical cross-polarization studies are a useful characterization of the uniformity of the imposed global anisotropy.  相似文献   
102.
A New Bibenzyl Glycoside from Dendrobium moniliforme   总被引:1,自引:0,他引:1  
A new bibenzyl glycoside has been isolated from the stems of Dendrobium moniliforme (L.) Sw.(Orchidaceas).Its structure has been identified on the basis of spectroscopic and chemical methods.  相似文献   
103.
Finite element analysis of fluid flow with moving free surface has been performed in 2‐D and 3‐D. The new VOF‐based numerical algorithm that has been proposed by the present authors (Int. J. Numer. Meth. Fluids, submitted) was applied to several 2‐D and 3‐D free surface flow problems. The proposed free surface tracking scheme is based on two numerical tools; the orientation vector to represent the free surface orientation in each cell and the baby‐cell to determine the fluid volume flux at each cell boundary. The proposed numerical algorithm has been applied to 2‐D and 3‐D cavity filling and sloshing problems in order to demonstrate the versatility and effectiveness of the scheme. The proposed numerical algorithm resolved successfully the free surfaces interacting with each other. The simulated results demonstrated applicability of the proposed numerical algorithm to the practical problems of large free surface motion. It has been also demonstrated that the proposed free surface tracking scheme can be easily implemented in any irregular non‐uniform grid systems and can be extended to 3‐D free surface flow problems without additional efforts. Copyright © 2003 John Wiley & Sons, Ltd.  相似文献   
104.
Jun Ho Choi 《Tetrahedron letters》2004,45(24):4607-4610
A Shvo-type diruthenium complex is heterogenized by a sol-gel process, which catalyzes the conversion of alcohols to carbonyl compounds and molecular hydrogen without any additive. The heterogeneous catalyst is recoverable by simple filtration, stable in the air, and reusable.  相似文献   
105.
106.
A modulation frequency multiplexed dual diode-laser system is developed for simultaneous detection of the two most common fire gas products CO and CO2. Simultaneous detection is achieved by modulating each laser at different frequencies, demodulating the signal by a pair of lock-in amplifiers for each gas. Laser beams are combined and detected by one detector after passing through an identical optical path. The experimental results show little performance degradation associated with modulation frequency multiplexing, and no cross-talk between the two multiplexed detection channels is measured.  相似文献   
107.
Let B^α = {B^α(t),t E R^N} be an (N,d)-fractional Brownian motion with Hurst index α∈ (0, 1). By applying the strong local nondeterminism of B^α, we prove certain forms of uniform Hausdorff dimension results for the images of B^α when N 〉 αd. Our results extend those of Kaufman for one-dimensional Brownian motion.  相似文献   
108.
本文在无氧条件下利用ESR分别观察了肝脏和晶状体的微粒体及线粒体酶在NADPH存在下还原三硝基甲苯(TNT)的过程,检测到参数为g=2.0048±0.0005,A_对位~N=1.215mT,A~N=0.800±0.010mT,A~H=0.122±0.0206mT的自由基信号,并通过电子计算机对ESR谱的模拟证明该自由基信号为TNT硝基阴离子自由基,根据其超精细分裂常数认为,其不配对电子的电子云密度主要分布在对位硝基上。  相似文献   
109.
110.
GaN is grown on Si-face 4H-SiC(0 0 0 1) substrates using remote plasma-assisted methods including metalorganic chemical vapour deposition (RP-MOCVD) and molecular beam epitaxy (MBE). Real time spectroscopic ellipsometry is used for monitoring all the steps of substrate pre-treatments and the heteroepitaxial growth of GaN on SiC. Our characterization emphasis is on understanding the nucleation mechanism and the GaN growth mode, which depend on the SiC surface preparation.  相似文献   
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