Lattice disorder in silicon induced by 2.0 MeV Cu+ irradiation

The effect of 2.0 MeV Cu⁺ irradiation on Si(100) crystal has been studied by the Rutherford backscattering/channeling technique. Analysis of the lattice disorder distribution has been performed under 100 direction of tilting off from the target normal: 7°, 30°, and 45° as well as different doses. The lattice disorder distributions in Si(100) have been compared with TRIM'89 simulation. The results show that the lattice disorder distributions in Si(100) under different irradiation angles seem to be in good agreement with TRIM'89 simulation. When the dose increases up to 8.7×10¹⁴ ions/cm², the defect concentration increases leading to the formation of an amorphous layer.     

Oscillations of certain second order nonlinear differential equations

A second order nonlinear differential equation

双柱双泵高效液相色谱－电化学法测定尿中香草扁桃酸

采用双柱、双泵和双阀，通过住切换技术对尿中的香草扁桃酸（ＶＭＡ）进行直接进样分离，并用电化学检测器检测。样品先进入柱Ⅰ，初步分离后，包含ＶＭＡ的组分被切换入柱Ⅱ进一步分离。结果显示，此法操作简单、快速，回收率高，重复性好。     

Inclusion of ferrous phenanthroline in molybdenum disulfide

Ｉｎｔｅｒｃａｌａｔｉｏｎｃｈｅｍｉｓｔｒｙｏｆｌａｙｅｒｅｄｔｒａｎｓｉｔｉｏｎｍｅｔａｌｄｉｓｕｌｆｉｄｅｓｈａｓｂｅｅｎｅｘｔｅｎｓｉｖｅｌｙｓｔｕｄｉｅｄｉｎｔｈｅｐａｓｔｙｅａｒｓ[1].Ｉｔｈａｓｂｅｅｎｅｓｔａｂｌｉｓｈｅｄｔｈａｔｔｈｅｉｎｔｅｒｃａｌａｔｉｏｎｒｅａｃｔｉｏｎｄｅｐｅｎｄｓｓｔｒｏｎｇｌｙｏｎｅｌｅｃｔｒｏｎｉｃｓｔｒｕｃｔｕｒｅｏｆｔｈｅｔｒａｎｓｉｔｉｏｎｍｅｔａｌｄｉｓｕｌｆｉｄｅｓ.Ｆｏｒｉｎｓｔａｎｃｅ,ｖａｒｉｏｕｓｇｕｅｓｔｍｏｌｅｃｕｌｅｓｈａｖｅｂｅ…     

基于三维静电势参数研究C60溶解性的构效关系

在量子化学从头算基础上,对一系列溶剂化合物分子进行了结构优化和三维静电势参数计算,运用多元线性回归分析和神经网络方法对C60在121种不同溶剂的溶解性与计算的结构参数进行了构效关系研究.用建立起来的QSPR 关系式对15种不同结构类型溶剂进行了预测,并阐述了C60溶质与不同溶剂之间的相互作用,获得了满意的结果.     

镓在裸Si系和SiO2/Si系掺杂效应

Based on the diffusion action of gallium in silicon and SiO2 ,a diffusion model of gallium doping in bare silicon system and SiO_2/Si system is first presented in this paper ,the gallium doping effect in the two systems is analyzed theoretically. Experiments and applications have proved that the use of the open-tube gallium deffusion in SiO2/Si system can substantially improve diffusion quality and device characteristics .     

Positron/positronium annihilation in nanocrystalline silicon thin films

Positron and positronium annihilation investigations were applied to nanocrystalline silicon (nc-Si) thin films, for the first time. The nc-Si thin films with average grain diameters of 3–5 nm show intense blue luminescence at room temperature. The nanometer-sized Si crystallites formed in amorphous Si (a-Si) matrix give rise to this luminescence. Very highS-parameters up to 0.62 were observed in the as-grown a-Si thin film suggesting positronium formation in the a-Si layer. The average lifetime of the positrons in the a-Si was determined to be about 520 ps. TheS-parameters dropped significantly to 0.53 by crystallization of the thin film at 800 °C for 10 seconds, which was almost the same to the value observed in bulk Si (100) substrate. Further crystallization from 60 seconds to 1 hour showed smaller change in theS-parameters than that from the a-Si to 10 seconds. The large change in theS-parameters due to the annealing might be caused by the formation of Si nanocrystallites in a-Si matrix suggesting that positron is a sensitive probe for structural investigations of the nc-Si materials.     

溶液还原法制备球形超细镍粉

超细镍粉由于表面活性高、导电性和导热性好而被广泛应用于化学催化剂、烧结活化剂、导电浆料门等方面．目前，制备超细镍粉的方法主要有问：真空蒸馏冷凝法、机械粉碎法、电解法、羰基镍热分解法、浆化氢还原法和溶液还原法等．在这些方法中，溶液还原法的工艺简单，所得粉末纯度高，颗粒尺寸小且分布均匀[3]．法国的Figlarz等[4]用弱有机还原剂乙二醇还原粒径小干0．1μm的Ni（OH）2。超细粉末，引入AgNO3。作为成核剂后，制得了粒径＜1μm的超细镍粉，但这种方法需长时间高温回流反应，对原料要求苛刻，且采用有机分散介质成本较高，…