Narrow linewidth continuous-wave and gain-switched fiber laser with intracavity unpumped Er-doped fiber loop

Investigation has been performed for the characteristics of the fiber ring laser incorporating an intracavity unpumped Er-doped fiber Sagnac loop for narrow linewidth continuous wave (CW) and gain-switched pulsed operation. The gain-switched pulse has duty cycle of 4.4% with more than 113 mW in peak power at the reflective optical filter output and the laser was stable both in output power and the peak wavelength.     

变频空调制冷系统流量调节性能分析和实验研究

通过实验分析不同膨胀阀开度和压缩机频率下系统性能。过热度在‘0’点及前后情况下,制冷系统性能及回油状况随膨胀阀开度调节,会出现较大变化。且在过热度为‘0’时系统制冷量和能效比最高。同时对不同频率下系统性能参数变化规律尤其是换热器效率影响进行分析。给出膨胀阀开度和压缩机变转速联合调节在系统性能最优状态下调节策略。     

Colorimetric Detection of Fe(II) and Co(II) by Using Terpyridine-Based Derivative

Journal of Applied Spectroscopy - A multi-ion chromogenic sensor based on a terpyridine moiety was developed for the semiquantitative, visual, and sensitive speciation analysis of Fe2+ and Co2+...     

Pair production of charged Higgs bosons in the left–right twin Higgs model at the ILC and LHC

The left–right twin Higgs (LRTH) model predicts the existence of a pair of charged Higgs bosons φ^±. In this paper, we study the production of the charged Higgs boson pair φ^± at the international linear collider (ILC) and the CERN large hadron collider (LHC). The numerical results show that the production rates are at the level of several tens fb at the ILC, and the process e⁺e^-→φ⁺φ^- can produce adequately distinct multi-jet final states. We also discuss the charged Higgs boson pair production via the process qq̄→φ⁺φ^- at the LHC and estimate in this case the production rates. We find that, as long as the charged Higgs bosons are not too heavy, they can be abundantly produced at the LHC. The possible signatures of these new particles might be detected at the ILC and LHC experiments. PACS 12.60.Fr; 14.80.Mz; 14.65.Ha; 12.15.Lk     

Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes

This paper investigates the dependence of current voltage characteristics of AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes （RTDs） on spacer layer thickness. It finds that the peak and the valley current density J in the negative differential resistance （NDR） region depends strongly on the thickness of the spacer layer. The measured peak to valley current ratio of RTDs studied here is shown to improve while the current density through RTDs decreases with increasing spacer layer thickness below a critical value.     

Magnetic domain structures of precipitation-hardened SmCo 2：17-type sintered magnets： Heat treatment effect

The typical magnetic domains of Sm（CObalFe0.25Cuo.07Zr0.02）7.4 magnets quenched through various heattreatment steps have been revealed by using magnetic force microscopy （MFM）. For the specimens in which the nominal c-axis is perpendicular to the imaging plane, the domain configurations change from plate-like for the as-sintered magnet to corrugation and spike-like for the homogenized one, and then to a coarse and finally to a finer domain structure when isothermally aged at 830℃ and then annealed at 400℃. However, only plate-like domains can be detected on the surfaces with the nominal c-axis parallel to the imaging plane. The finer domain （so-called interaction domain） is a characteristic magnetic domain pattern of the SmCo 2：IT-type magnets with high coercivities. Domain walls in a zigzag shape are revealed by means of MFM in final bulk SraCo 2：17-type sintered magnets.     

Carriers recombination processes in charge trapping memory cell by simulation

We have evaluated the effects of recombination processes in a charge storage layer, either between trapped electrons and trapped holes or between trapped carriers and free carriers, on charge trapping memory cell＇s performances by numerical simulation. Recombination is an indispensable mechanism in charge trapping memory. It helps charge convert process between negative and positive charges in the charge storage layer during charge trapping memory programming/erasing operation. It can affect the speed of programming and erasing operations.     

The growth temperatures dependence of optical and electrical properties of InN films

InN films grown on sapphire at different substrate temperatures from 550°C to 700°C by metalorganic chemical vapor deposition were investigated. The low-temperature GaN nucleation layer with high-temperature annealing (1100°C) was used as a buffer for main InN layer growth. X-ray diffraction and Raman scattering measurements reveal that the quality of InN films can be improved by increasing the growth temperature to 600°C. Further high substrate temperatures may promote the thermal decomposition of InN films and result in poor crystallinity and surface morphology. The photoluminescence and Hall measurements were employed to characterize the optical and electrical properties of InN films, which also indicates strong growth temperature dependence. The InN films grown at temperature of 600°C show not only a high mobility with low carrier concentration, but also a strong infrared emission band located around 0.7 eV. For a 600 nm thick InN film grown at 600°C, the Hall mobility achieves up to 938 cm²/Vs with electron concentration of 3.9 × 10¹⁸ cm⁻³. Supported by the National Basic Research Program of China (Grant No. 2006CB6049), the National Natural Science Foundation of China (Grant Nos. 6039072, 60476030 and 60421003), the Great Fund of the Ministry of Education of China (Grant No. 10416), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050284004), and the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK2005210 and BK2006126)