单粒子势模型下价核子的密度分布

依据实验事实，利用单粒子势模型，计算了一些核态外层价核子的密度分布.计算给出了价核子在核外部分布的概率和贡献，以此作为晕核态的判断标准.通过研究均方根半径随结合能变化的规律，指出了晕核态存在的条件，尤其是质子晕核态存在的条件.这些对判断和寻找晕核态有现实的指导意义. 关键词： 单粒子势模型 价核子 密度分布 中子晕核态 质子晕核态     

邻域并与泛圈图

本文中 ,我们用邻域并对泛圈图进行深入的研究 ,主要取得了“2连通 n( n≥ 3 )阶图 G,满足下列条件之一 ,则 G是泛圈图 : :δ≤ ( n-7) /3 ,N C≥ ( 2 n-3 ) /3 ; :( n-6) /3≤ δ≤ ( n+2 ) /3 ,N C≥ 2 n/3 ; :δ≥ ( n+3 ) /3 ,N C≥ ( 2 n-3 ) /3 .当 3≤ n≤ 14时 ,N C≥ 2 n/3”     

时间分辨红外发射光谱法对自由基反应的研究

在过去的 15年中 ,傅立叶变换红外发射光谱法广泛应用于研究气相自由基反应 .Sloan首先研究了O(1D)的反应 ,随后Leone和Hancock研究了O(3 P)的反应 .此后 ,孔繁敖和朱起鹤等研究了小自由基 ,包括CH、CH2 、CH3 、C2 H3 、C2 H5、C2 H、C3 H3 和C3 H5与O2 、NO、N2 O、NO2 等分子的反应。在红外光谱中观察到各个反应的初生产物和初步反应通道 ,和从头算的理论研究结合起来 ,这些反应的机理已基本弄清 .     

Excitons in coupled quantum dots

Properties of excitons in vertically coupled GaAs/AlGaAs quantum dots were investigated using the variational method within the envelope function and effective mass approximations. It was found that when the thickness of the spacer layer becomes less than about one exciton Bohr radius, both the exciton binding energy and the fundamental optical transition energy are reduced compared to those in isolated quantum dots. This is a result of increased space extension of exciton due to the penetration of carrier wave functions into the spacer layer and corresponding reduction in confinement energy which dominates over the Coulomb interaction between the electron and the hole.     

Crystallographic report: Bis(norfloxacin)dilead(II) tetranitrate, [Pb2(H‐Norf)2(ONO2)4]

The centrosymmetric binuclear structure of [Pb₂(H‐Norf)₂(ONO₂)₄]shows the geometry around each lead(II) atom to be distorted trigonal bipyramidal with Pb–O distances ranging from 2.357(3) to 2.769(4) Å. Copyright © 2003 John Wiley & Sons, Ltd.     

High performance 1689-nm quantum well diode lasers

1689-nm diode lasers used in medical apparatus have been fabricated and characterized. The lasers had pnpn InP current confinement structure, and the active region consisted of 5 pairs of InGaAs quantum wells and InGaAsP barriers.     

First-principles study of indium on silicon (1 0 0)—the structure, defects and interdiffusion

The atomic structures of indium (In) on silicon (Si) (1 0 0)-(2 × 1) surface are investigated by the local density approximation using first-principles pseudopotentials. Total energy optimizations show that the energetically favored structure is the parallel ad-dimer model. The adsorption energy of In on ideal Si(1 0 0)-(1 × 1) surface is significantly higher than that on reconstructed Si(1 0 0)-(2 × 1) surface, suggesting that In adsorption does not break the Si-Si dimer bond of the substrate. When Si surface contains single dimer vacancy defects, In chain will be interrupted, leading to disconnected In nanowires. Displacive adsorption of In on Si(1 0 0) is also considered, and the calculation suggests that interdiffusion of In into Si substrate will not be favorable under equilibrium conditions.     

现代免疫分析技术研究进展

本文着重分析了各种标记免疫分析方法的发展状况，指出更多的非同位素标记物的使用，自动化分析等将是免疫分析法的未来发展趋势。     

sl玻色子体系在U(2l+1)O(2l+2)过渡区的严格解

利用无穷维李代数方法得到了相互作用sl玻色子体系在U( 2l+ 1 ) O( 2l+ 2 )过渡区的能谱和波函数的严格解 .给出了该系统Bethe假定方程的数值解法 .     

Series solution to the laser-ion interaction in a Raman-type configuration

The Raman interaction of a ultracold ion trapped with two travelling wave lasers is studied analytically with series solutions, in the absence of the rotating wave approximation (RWA) and without restrictions of both the Lamb-Dicke limit and the weak excitation regime. The comparison is made between our solutions and those obtained under the RWA in order to demonstrate the validity region of the RWA. As a practical example, the preparation of Schr?dinger-cat states is proposed beyond the weak excitation regime, using our calculations. Received 12 March 2001 and Received in final form 16 October 2001