SiN团簇光电子能谱的指认

应用含时密度泛函理论研究了SiN团簇低能激发态的性质.将计算结果与前人已有的计算结果进行了比较，此外还根据计算得到的低能激发能对SiN^-阴离子的光电子能谱进行了理论指认.研究表明，SiN^-阴离子的基态为¹Σ态，而光电子能谱上的X峰和A峰分别对应于¹Σ→²Σ和¹Σ→²Π的跃迁.研究结果还表明，用含时密度泛函的方法来处理激发态的问题是成功的. 关键词： 团簇 光电子能谱 基态 激发态     

O在Au(111)表面吸附的密度泛函理论研究

应用密度泛函理论，本文系统地研究了O在Au(111)表面上的吸附能、吸附结构、功函数、电子密度和投影态密度，给出了覆盖度从0.11ML到1.0ML的范围内，O的吸附特性随覆盖度变化的规律.研究发现O的稳定吸附位为3重面心立方(fcc)洞位，O在fcc洞位的吸附能对覆盖度比较敏感，其值随着覆盖度的增加而减小；O诱导Au(111)表面功函数的变化量与覆盖度成近线性关系，原因是Au表面电子向O偏移，形成表面偶极子；O—Au的相互作用形成成键态和反键态，且反键态都被占据，造成O—Au键很弱，O吸附能较小. 关键词： 表面吸附 Au(111)表面 密度泛函理论 电子特性     

A Modified Quasi-Newton Method for Structured Optimization with Partial Information on the Hessian

This paper develops a modified quasi-Newton method for structured unconstrained optimization with partial information on the Hessian, based on a better approximation to the Hessian in current search direction. The new approximation is decided by both function values and gradients at the last two iterations unlike the original one which only uses the gradients at the last two iterations. The modified method owns local and superlinear convergence. Numerical experiments show that the proposed method is encouraging comparing with the methods proposed in [4] for structured unconstrained optimization Presented at the 6th International Conference on Optimization: Techniques and Applications, Ballarat, Australia, December 9–11, 2004     

T 1 theorem for Besov spaces on nonhomogeneous spaces

Suppose μ is a Radon measure on ℝ ^d , which may be non doubling. The only condition assumed on μ is a growth condition, namely, there is a constant C₀>0 such that for all x∈supp(μ) and r>0, μ(B(x, r))⪯C₀rⁿ, where 0<n⪯d. We prove T1 theorem for non doubling measures with weak kernel conditions. Our approach yields new results for kernels satisfying weakened regularity conditions, while recovering previously known Tolsa’s results. We also prove T1 theorem for Besov spaces on nonhomogeneous spaces with weak kernel conditions given in [7].     

Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature

Hydrogen-free silicon nitride （SiNx） films were deposited at room temperature by microwave electron cyclotron resonance （MW-ECR） plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm.     

Sobolev-Hardy不等式与临界双重调和问题

该文讨论一类带有奇异系数的双重调和方程{△^2u-μu/|x|^s=f(x,u),x∈Ω,u=δu/δv=0,x∈δΩ，这里Ω包含R^N是包含0的有界光滑区域，u∈H0^2(Ω），μ∈R是参数，0≤s≤2,△^2=△△表示双重拉普拉斯算子，当f(x,u)=u^p,p=2N/N-4时，上述问题就是一个临界双重调和问题，该文运用Sobolev-Hardy不等式和变分方法，得到它的解的存在性的一些结果。     

GM(1,1)的周期修正模型及其在泉水流量预测中的应用

本文阐述了 GM( 1 ,1 )的残差周期修正模型 ,并将它应用于山西神头泉的流量预测中 ,建立了神头泉流量的 GM( 1 ,1 )周期修正模型 ,对其流量进行了预测 ,为神头泉域岩溶水资源开发利用和保护提供了科学依据     

2,9-disubstituted 1,10-phenanthroline nickel complexes: Syntheses,characterization, and their ethylene oligomerization

Nickel complexes 1–4 ligated with 2,9-disubstituted-1,10-phenanthroline were synthesized and characterized by FT-IR spectra and elemental analysis. The molecular structure of complex 2 was confirmed by X-ray crystal diffraction analysis. Activated with methylaluminoxane (MAO), those complexes showed moderate activities for ethylene oligomerization. Published in Kinetika i Kataliz, 2007, Vol. 48, No. 5, pp. 710–714. This article was submitted by the authors in English.     

ON THE PRODUCT OF GATEAUX DIFFERENTIABILITY LOCALLY CONVEX SPACES

A locally convex space is said to be a Gateaux differentiability space (GDS)provided every continuous convex function defined on a nonempty convex open subset D of the space is densely Gateaux differentiable in D.This paper shows that the product of a GDS and a family of separable Frechet spaces is a GDS,and that the product of a GDS and an arbitrary locally convex space endowed with the weak topology is a GDS.