A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress

This paper studies systematically the drain current collapse in AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors （MOS-HEMTs） by applying pulsed stress to the device. Low-temperature layer of Al2O3 ultrathin film used as both gate dielectric and surface passivation layer was deposited by atomic layer deposition （ALD）. For HEMT, gate turn-on pulses induced large current collapse. However, for MOS-HEMT, no significant current collapse was found in the gate turn-on pulsing mode with different pulse widths, indicating the good passivation effect of ALD Al2O3. A small increase in Id in the drain pulsing mode is due to the relieving of self-heating effect. The comparison of synchronously dynamic pulsed Id - Vds characteristics of HEMT and MOS-HEMT further demonstrated the good passivation effect of ALD Al2O3.     

Propagation of light in(2+1)-dimensional nonlinear optical media with spatially inhomogeneous nonlinearities

The(2 1)-dimensional nonlinear Schr(o)dinger(NLS)equation with spatially inhomogeneous nonlinearities is investigated,which describes propagation of light in(2 1)-dimensional nonlinear optical media with inhomogeneous nonlinearities.New types of optical modes and nonlinear effects in optical media are presented numerically.The results reveal that the regular split of beam can be obtained in (2 1)-dimensional nonlinear optical media with inhomogeneous nonlinearities,by adjusting the guiding parameter.Furthermore,the stability of beam regular split is discussed numerically,and the results reveal that the beam regular split is stable to the finite initial perturbations.     

Experimental study on generation of high energy few cycle pulses with hollow fiber filled with neon

25 fs pulses with energy up to 0.8 mJ from a multi-pass amplifier system have been spectrally broadened from 460 nm to 950 nm due to strong self-phase modulation (SPM) effect in a gas filled hollow fiber. Using a set of chirped mirrors, the ultra-broadband dispersion compensation was achieved, and the compressed pulses reached their transform limit. Under optimized conditions we achieved pulses with duration of 5.1 fs and with energy of 400 μJ, corresponding to the peak power up to 80 GW. Supported by the National Natural Science Foundation of China (Grant Nos. 60608003, 60490280, 60225005 and 60621063)     

利用等厚干涉条纹测量微光的调制传递函数MTF

通过对微光的调制传递函数 (MTF)的讨论 ,结合传统的“分辨率板法” ,提出了一种新的测量微光的MTF的方法。该方法直接从MTF的物理含义出发 ,利用迈克尔逊干涉仪产生一系列空间频率的等厚干涉条纹来模拟分辨率板的作用 ,在计算机的控制下 ,自动测量出连续的MTF曲线。给出的实验光路和实验结果表明 ,利用干涉条纹测量微光的MTF是一种可行的简便方法 ,在计算机的控制下 ,可快速完成夜视仪的传递函数测量     

基于SOS的脉冲功率源技术新进展

 研制了基于SOS的胡杨200和胡杨700脉冲功率源。给出了胡杨200和胡杨700的电路原理、组成结构和实验波形。介绍了在SOS脉冲功率源上开展的高重复频率强流电子束产生、长寿命阴极实验、绝缘介质的高重复频率击穿实验和低引导磁场无箔二极管等实验研究进展。经测试，胡杨200在2 kHz重复频率、负载阻抗200 Ω下，输出电压200 kV，脉冲宽度约35 ns，平均输出功率大于10 kW；在300 Hz条件下可连续运行。胡杨700同样为全固态脉冲功率源，其设计指标:输出电压700 kV，电流5 kA，脉冲宽度约40 ns；经初步调试在150 Ω电阻负载上单脉冲输出指标达到660 kV，4.4 kA，脉宽约70 ns。     

高功率速调管聚焦磁场设计研究

 国产45 MW速调管是在原国产30 MW HK-1型速调管的基础上改进和发展起来的，其聚焦磁场设计也是参照30 MW速调管聚焦磁场设计并在其基础上加工改造完成。为此必须对旧聚焦系统进行改造，设计出符合需要的磁场分布，以满足45 MW速调管工作的需要。首先从理论上找出速调管工作时的理想磁场值，根据该磁场分布设计出相应的线圈结构；其次根据45 MW速调管的结构尺寸，对30 MW速调管的线圈支架进行改造，利用旧线圈和新支架组成新的聚焦系统；最后，根据理论模拟和测试结果，调整和优化各组线圈的电流值，给出速调管工作时的各组聚焦电源运行参考值。叙述了新聚焦线圈的理论设计和测试分析，包括新线圈支架的设计、水冷系统与线圈的结构安排和整体的测试结果，最后根据速调管高功率测试运行状态给出速调管工作时的聚焦线圈电流的参考值。     

钛扩散铌酸锂矩形波导中的双折射耦合对传播常数的影响

 从亥姆霍兹方程出发，得到了各向异性光波导在弱导近似下的耦合模理论。耦合系数包括偏振耦合项和双折射耦合项。并用马卡提里近似下的模式作为零级近似。用一级微扰法计算了折射率渐变分布的钛扩散铌酸锂矩形波导的传播常数。在给定参数的情况下，得到双折射项引起的传播常数的改变约为主微扰项的3%，因此双折射耦合对钛扩散铌酸锂矩形波导的性能影响不可忽略，这对设计和分析与它相关的光波导器件具有指导意义。     

单丁基磷酸酯的合成与表征

本文报道用三氯氧磷酯化、水解方法制备单丁基磷酸酯，用红外、核磁共振，质谱等方法对其结构进行了分析与表征。