基于全息聚焦机理空间光孤子的相互作用势函数

利用变分法讨论了反向传输的基于全息聚焦机理空间光孤子的相互作用,导出了相干和非相 干相互作用的势函数.当孤子间的相对相位不随传输距离变化或相对相位对传输距离的偏导 数与孤子间距无关时,相干和非相干相互作用势函数都与孤子间的相对相位无关,出现孤子间 反常相互作用,这正好是近期文献的结果. 关键词： 空间光孤子 相互作用 变分原理     

Accurate Gain Flattening Filters Manufactured by Optical Compensation Monitoring Method

GFFs with less than 0.4 dB peak-to-peak error functions are routinely fabricated using commercially available coating machines by utilizing the natural error compensation mechanism of wavelength variable turning point optical monitoring method.     

III-Nitride Quantum Devices—Microphotonics

Photonic devices based on III-nitrides offer benefits such as UV/blue emission, large band offsets of InN/GaN/AlN heterostructures allowing novel quantum well (QW) device design, and inherently high-emission efficiencies. Furthermore, due to their mechanical hardness and larger band gaps (when compared with conventional semiconductor devices), III-nitride-based devices may operate at much higher temperatures and voltages/power levels for any dimensional configuration and in harsher environments than other semiconductor devices and are expected to provide much lower temperature sensitivities. These are crucial advantages for many applications. Over the last decade, the physics of microsize photonic devices has been investigated. New physical phenomena and properties are expected to dominate as the device size scales down. The microsize light emitters offer benefits over edge emitters such as the ability to create arrays of individually controllable pixels on a single chip, enhanced quantum efficiency, and greatly reduced lasing threshold. Rapid progress in the area of III-nitride microphotonics has been made. The growth and fabrication of micron and submicron size photonic structures based on III-nitride wide bandgap semiconductors has been achieved, and the technology has made it possible to integrate arrays of optical elements to form active photonic-integrated devices. One example is an interconnected µ-LED with enhanced emission efficiency over the conventional LEDs for the same device area. Another example is a µ-LED array with independently addressed pixels or III-nitride microdisplay. III-nitride microdisplay may offer performance that is superior to microdisplays fabricated from liquid crystals and organic LEDs. The third example presented is III-nitride UV Focal Plane Arrays (UV-FPA) of detectors. So far, the operation of AlGaN UV-FPA with size up to 256×256 pixels with 30×30?μm² unit cells has been demonstrated. Together with the nature of their two-dimensional array, these active micro-photonic devices show promise in many important applications, such as optical communications, signal and image processing, optical interconnects, computing, enhanced energy conversion and storage, chemical, biohazard substances, and disease detection, missile and shellfire, atmospheric ozone-level, and flame sensing. III-nitride microlens arrays have been fabricated successfully for blue and UV wavelength applications on GaN and AlN. The successful fabrication of microlens arrays based on III-nitride materials opens the possibility for monolithically integrating nitride-based micro-size photonic devices, as well as coupling light into, out of, and between arrays of III-nitride emitters and detectors, especially for short wavelengths covering the green-blue to deep UV (200?nm) region. Nanofabrication and characterization of photonic crystals with diameter/periodicity as small as 100/180?nm on InGaN/GaN MQW has been achieved. An unprecedented maximum enhancement factor of 20 was obtained under optical pumping. Single-mode ridged optical waveguide devices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550?nm wavelength window. The feasibility of developing novel photonic integrated circuits based on III-nitride wide bandgap semiconductors for fiber-optical communications has been investigated.     

Vanishing Shear Viscosity Limit in the Magnetohydrodynamic Equations

We study an initial boundary value problem for the equations of plane magnetohydrodynamic compressible flows, and prove that as the shear viscosity goes to zero, global weak solutions converge to a solution of the original equations with zero shear viscosity. As a by-product, this paper improves the related results obtained by Frid and Shelukhin for the case when the magnetic effect is neglected. Supported by NSFC (Grant No. 10301014, 10225105) and the National Basic Research Program (Grant No. 2005CB321700) of China.     

CRYSTAL AND MOLECULAR STRUCTURE OF A NOVEL Au Ag SUPRACLUSTER COMPOUND [Au_13Ag_12(μ-Br)_4(μ_3-Br)_2(Ph_3P)_10-

<正> [Au13Ag12(μ-Br)1(μ3-Br)2 (Ph3P)10Br2] Br, monoclinic. space group C2/m, a = 36. 496(17). b=16. 878(7), c-=19. 772(9) A , β=99. 87(5)°, V=11998. 9 A3.Z=2. The final R(Rw) is 0. 097(0. 109) for 3779 reflections with I>3σ(I). The structure can he considered as two icosahedral cluster units (AurAg6) sharing one vertex and linked hy six bromine atoms. The Au - Au, Au - Ag. and Ag-Ag distances fall in the ranges of 2. 69-2. 96. 2. 84-3. 02. and 2. 92-3. 26 A, respectively.     

A FOUR-POINT BOUNDARY VALUE PROBLEM FOR NONLINEAR EQUATION

1IntroductionThemethodofupperandlowersolutionshasbecomeastandardtoolforstudyingthesolvabilityoftwo-pointboundaryvalllcproblemsassociatedwitllsecond-ordernonlineardifferentialequations.Inrecent,years,Rachunkovd[1,2,3]studiedthefour--pointboundaryvalueprobl…     

带有硬相互作用的相对论Boltzmann方程整体解存在性的证明

给出了带有硬相互作用的相对论Ｂｏｌｔｚｍａｎｎ方程初值问题整体解存在性的证明     

闪光Ⅰ号应用于X射线爆轰照相——研究金属射流的穿甲效应

闪光X射线照相技术是研究动载荷及其效应的重要测试手段,特别适用于研究物质在爆炸作用下的瞬变过程,本文介绍了闪光Ⅰ号加速器应用于X射线爆轰照相的基本状况,以及用于观察金属射流穿过高密度物质钨靶的实验技术。     

HL－1装置辅助加热等对能量约束的影响

在ＨＬ－１托卡马克上进行了辅助加热、加料、电流驱动的物理实验研究。在改善等离子体约束方面，某些实验取得了较好的结果。在适当的稳定放电条件下，低杂波电流驱动和弹丸注入辅助加料，均能使等离子体能量约束得到一定程度的改善，与相同密度条件下的欧姆加热放电相比，能量约束时间提高了约３０％。在电子回旋共振加热等离子体实验中，等离子体总能量明显增加，但与相同密度条件下的欧姆加热放电相比，能量约束时间减少了约２０％。     

Irradiation-induced reduction and luminescence properties of Sm doped in BaBPO5

Usually, Sm²⁺ ions could be reduced by heating the materials in reducing atmospheres. Exposure to ionizing radiations is also known to cause Sm³⁺→Sm²⁺ conversion. In this work, BaBPO₅ doped with the samarium ion was prepared by high temperature solid-state reaction. Sm²⁺ ions were obtained by two different reduction methods, i.e., heating in H₂ reduced atmosphere and X-ray irradiation. The measurements of X-ray diffraction (XRD), and scanning electron microscope (SEM) were investigated. It is found that the conversion of Sm³⁺→Sm²⁺ is very efficient in BaBPO₅ hosts after X-ray irradiation. Sm²⁺ ions under these two reduction methods exhibit different characteristics that were studied by measurements of luminescence and decay. The results showed that the luminescence properties of Sm²⁺ ions in BaBPO₅ were highly dependent on the sample preparation conditions.